HCS283MS
October 1995
Radiation Hardened
4-Bit Full Adder with Fast Carry
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
SE 1
B1
A1
S0
A0
B0
CIN
GND
1
2
3
4
5
6
7
8
16 VCC
15 B2
14 A2
13 S2
12 A3
11 B3
10 S3
9 C0
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-
Day (Typ)
• Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
• Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
o
C to +125
o
C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% VCC Max
- VIH = 70% VCC Min
• Input Current Levels Ii
≤
5µA at VOL, VOH
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
SE 1
B1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
B2
A2
S2
A3
B3
S3
C0
Description
The Intersil HCS283MS is a Radiation Hardened 4-bit binary full
adder with fast carry that adds two 4-bit binary numbers and
generates a carry-out bit if the sum exceeds 15.
The device can be used in positive or negative logic. When using
positive logic the carry-in (CIN) input must be tied low, if there is
no carry-in signal.
The HCS283MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS283MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
A1
S0
A0
B0
CIN
GND
Ordering Information
PART NUMBER
HCS283DMSR
HCS283KMSR
HCS283D/Sample
HCS283K/Sample
HCS283HMSR
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Spec Number
1
518850
File Number
4057
HCS283MS
Functional Diagram
7
CIN
5
A0
6
B0
3
A1
2
B1
14
A2
15
B2
12
A3
11
B3
8
GND
16
VCC
S0
4
S1
1
S2
13
S3
10
COUT
9
Spec Number
2
518850
Specifications HCS283MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
24
o
C/W
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 114
29
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . .100ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V ,
Note 2
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V, Note 2
VCC = 4.5V, VIH = 3.15V,
IOL = 50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V
Input Leakage
Current
Noise Immunity
Functional Test
NOTES:
1. All voltages reference to device GND.
2. Force/measure functions may be interchanged.
3. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
IIN
VCC = 5.5V, VIN = VCC or
GND
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, (Note 3)
1
2, 3
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
4.8
4.0
-4.8
-4.0
-
MAX
40
750
-
-
-
-
0.1
UNITS
µA
µA
mA
mA
mA
mA
V
PARAMETER
Supply Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Current
(Source)
IOH
Output Voltage Low
VOL
1, 2, 3
-
0.1
V
1, 2, 3
VCC
-0.1
VCC
-0.1
-
-
-
-
V
1, 2, 3
-
±0.5
±5.0
-
V
µA
µA
V
1
2, 3
FN
7, 8A, 8B
Spec Number
3
518850
Specifications HCS283MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
LIMITS
TEMPERATURE
MIN
MAX
UNITS
PARAMETER
Propagation Delay
CIN to SO
SYMBOL
(NOTES 1, 2)
CONDITIONS
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
21
24
22
26
24
28
25
30
28
33
29
34
35
40
35
43
44
55
50
62
51
62
46
58
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TPLH
CIN to S1
TPHL
TPLH
CIN to S2, CO
TPHL
TPLH
CIN to S3
TPHL
TPLH
An, Bn to CO
TPHL
TPLH
An, Bn to Sn
TPHL
TPLH
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(NOTE 1)
CONDITIONS
VCC = 5.0V, VIH = 5.0V,
VIL = 0.0V, f = 1MHz
VCC = 5.0V, VIH = 5.0V,
VIL = 0.0V, f = 1MHz
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
MAX
98
120
10
10
UNITS
pF
pF
pF
pF
PARAMETER
Capacitance Power Dissipation
SYMBOL
CPD
Input Capacitance
CIN
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics..
Spec Number
4
518850
Specifications HCS283MS
TABLE 4. POSTIRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
PARAMETER
Supply Current
Output Current (Sink)
Output Current
(Source)
Output Voltage Low
SYMBOL
ICC
IOL
IOH
(NOTE 1)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0V
VCC = VIH = 4.5V, VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
IOL = 50µA
VCC = 5.5V, VIH = 3.85V, VIL = 1.65V,
IOL = 50µA
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
IOL = 50µA
VCC = 5.5V, VIH = 3.85V, VIL = 1.65V,
IOH = -50µA
Input Leakage Current
Noise Immunity
Functional Test
Propagation Delay
CIN to SO
Propagation Delay
CIN to S1
Propagation Delay
CIN to S2, CO
Propagation Delay
CIN to S3
Propagation Delay
An, Bn to CO
Propagation Delay
An, Bn to Sn
NOTES:
1. All voltages referenced to device GND.
2. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
IIN
FN
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
(Note 2)
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
4.0
-4.0
MAX
750
-
-
UNITS
µA
mA
mA
VOL
-
0.1
V
-
0.1
V
VCC
-0.1
VCC
-0.1
-
-
-
V
-
±5
-
V
µA
V
TPHL
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
TPLH
2
2
2
2
2
2
2
2
2
2
2
2
24
26
28
30
33
34
40
43
55
62
62
58
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TABLE 5. DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
PARAMETER
ICC
IOL/IOH
DELTA LIMIT
12µA
-15% of 0 Hour
Spec Number
5
518850
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
