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1N6462

产品描述Zener Diodes 500 W UNIPOLAR TVS
产品类别分立半导体    二极管   
文件大小26KB,共2页
制造商SEMTECH
官网地址http://www.semtech.com
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1N6462概述

Zener Diodes 500 W UNIPOLAR TVS

1N6462规格参数

参数名称属性值
厂商名称SEMTECH
包装说明O-LALF-W2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
Factory Lead Time13 weeks
Is SamacsysN
其他特性HIGH RELIABILITY
最小击穿电压6.5 V
击穿电压标称值6.5 V
外壳连接ISOLATED
最大钳位电压11 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-LALF-W2
JESD-609代码e2
最大非重复峰值反向功率耗散500 W
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
极性UNIDIRECTIONAL
最大功率耗散3 W
认证状态Not Qualified
最大重复峰值反向电压6 V
表面贴装NO
技术AVALANCHE
端子面层TIN COPPER
端子形式WIRE
端子位置AXIAL
Base Number Matches1

文档预览

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1N6461
QPL
500 Watt Axial Leaded TVS
Thru
1N6468
TEL:805-498-2111 FAX:805-498-3804
DESCRIPTION
The 1N64xx series of transient voltage suppressors are
designed to protect military and commercial electronic
equipment from overvoltages caused by lightning, ESD,
EFT, inductive load switching, and EMP. These devices are
constructed using a p-n junction TVS diode in a
hermetically sealed, voidless glass package. The
hermetically sealed package provides high reliability in
harsh environmental conditions. TVS diodes are further
characterized by their high surge capability, low operating
and clamping voltages, and a theoretically instantaneous
response time. This makes them ideal for use as board
level protection for sensitive semiconductor components.
These devices are DESC QPL qualified to
MIL-S-19500/551.
FEATURES:
500 Watts Peak Pulse Power (tp = 10/1000µs)
Voidless hermetically sealed glass package
Metallurgically bonded
High surge capacity
Unidirectional
Available in
JTX,
and
JTXV
versions per
MIL-S-19500/551
MECHANICAL CHARACTERISTICS:
Hermetically sealed glass package
Tinned copper leads
Marking : P/N, date code, logo, & cathode band
APPLICATIONS:
Aerospace & Industrial Electronics
Board Level Protection
Airborne Systems
Shipboard Systems
Ground Systems
MAXIMUM RATINGS
RATING
Peak Pulse Power (tp = 10 x 1000µs)
Operating Temperature
Storage Temperature
Steady-State Power Dissipation @ TL = 75ºC (3/8”)
SYMBOL
Ppk
Tj
Tstg
PD
VALUE
500
-65 to +175
-65 to +175
3
UNIT
Watts
°C
°C
Watts
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise specified)
DEVICE
TYPE
REVERSE
STAND-OFF
VOLTAGE
VRWM
REVERSE
LEAKAGE
CURRENT
I
R
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ IT
TEST
CURRENT
I
T
MAXIMUM
CLAMPING
VOLTAGE
Vc @ Ipp
PEAK PULSE
CURRENT
Ipp
Tp = 1mS
PEAK PULSE
CURRENT
Ipp
Tp = 20
µ
S
TEMPERATURE
COEFFICIENT
OF VBR
αVz
(V)
1N6461
1N6462
1N6463
1N6464
1N6465
1N6466
1N6467
1N6468
5
6
12
15
24
30.5
40.3
51.6
(µA)
3000
2500
500
500
50
3
2
2
(V)
5.6
6.5
13.6
16.4
27.0
33.0
43.7
54.0
(mA)
25
20
5
5
2
1
1
1
(V)
9.0
11.0
22.6
26.5
41.4
47.5
63.5
78.5
(A)
56
46
22
19
12
11
8
6
(A)
315
258
125
107
69
63
45
35
% /°C
0.040
0.040
0.050
0.060
0.084
0.093
0.094
0.096
© 1997 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320

1N6462相似产品对比

1N6462 1N6463 1N6467 1N6466 GUS-TS8B-00-1962-BC
描述 Zener Diodes 500 W UNIPOLAR TVS Zener Diodes T DAP UNI 500W 12V Zener Diodes T DAP UNI 500W 40.3V Zener Diodes 500 W UNIPOLAR TVS Array/Network Resistor, Bussed, Tantalum Nitride/nickel Chrome, 0.05W, 19600ohm, 100V, 0.1% +/-Tol, -250,250ppm/Cel, 2017,
Reach Compliance Code unknown unknown unknown unknown compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
JESD-609代码 e2 e2 e2 e2 e0
端子数量 2 2 2 2 16
最高工作温度 175 °C 175 °C 175 °C 175 °C 125 °C
最低工作温度 -65 °C -65 °C -65 °C -65 °C -55 °C
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM SMT
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE TANTALUM NITRIDE/NICKEL CHROME
端子面层 TIN COPPER TIN COPPER TIN COPPER TIN COPPER Tin/Lead (Sn/Pb)
厂商名称 SEMTECH SEMTECH SEMTECH SEMTECH -
包装说明 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 -
针数 2 2 2 2 -
Factory Lead Time 13 weeks 13 weeks 13 weeks 13 weeks -
Is Samacsys N N N N -
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY -
最小击穿电压 6.5 V 13.6 V 43.7 V 33 V -
击穿电压标称值 6.5 V 13.6 V 44 V 33 V -
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED -
最大钳位电压 11 V 22.6 V 63.5 V 47.5 V -
配置 SINGLE SINGLE SINGLE SINGLE -
二极管元件材料 SILICON SILICON SILICON SILICON -
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE -
JESD-30 代码 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 -
最大非重复峰值反向功率耗散 500 W 500 W 500 W 500 W -
元件数量 1 1 1 1 -
封装主体材料 GLASS GLASS GLASS GLASS -
封装形状 ROUND ROUND ROUND ROUND -
极性 UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL -
最大功率耗散 3 W 3 W 3 W 3 W -
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified -
最大重复峰值反向电压 6 V 12 V 40.3 V 30.5 V -
表面贴装 NO NO NO NO -
端子形式 WIRE WIRE WIRE WIRE -
端子位置 AXIAL AXIAL AXIAL AXIAL -
Base Number Matches 1 1 1 1 -
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