AUTOMOTIVE GRADE
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
AUIRFR4105
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
I
D (Silicon Limited)
I
D (Package Limited)
D
55V
max.
45m
27A
20A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
G
S
D-Pak
AUIRFR4105
G
Gate
D
Drain
S
Source
Base part number
AUIRFR4105
Package Type
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRFR4105
AUIRFR4105TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(Tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
27
19
20
100
68
0.45
± 20
65
16
6.8
5.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
R
JC
R
JA
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
2.2
50
110
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-12-1
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
AUIRFR4105
Min. Typ. Max. Units
Conditions
55
––– –––
V V
GS
= 0V, I
D
= 250µA
––– 0.052 ––– V/°C Reference to 25°C, I
D
= 1mA
––– –––
45
m V
GS
= 10V, I
D
= 16A
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 250µA
6.5
––– –––
S V
DS
= 25V, I
D
= 16A
––– –––
25
V
DS
= 55V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 44V,V
GS
= 0V,T
J
=150°C
––– ––– 100
V
GS
= 20V
nA
––– ––– -100
V
GS
= -20V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
7.0
49
31
40
4.5
7.5
700
240
100
34
6.8
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= 16A
nC
V
DS
= 44V
V
GS
= 10V, See Fig. 6 &13
V
DD
= 28V
I
D
= 16A
ns
R
G
= 18
R
D
= 1.8,See Fig. 10
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz, See Fig.5
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 16A, V
GS
= 0V
ns T
J
= 25°C ,I
F
= 16A
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Typ. Max. Units
–––
–––
–––
57
130
27
100
1.6
86
200
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
V
DD
= 25V,
,
starting T
J
= 25°C, L = 410
µ
H, R
G
= 25, I
AS
= 16A, V
GS
=10V. (See fig. 12)
I
SD
16A,
di/dt
420A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
300
µ
s; duty cycle
2%.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 20A.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
is measured at T
J
approximately 90°C.
R
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
2
2015-12-1
AUIRFR4105
1000
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
10
4.5V
4.5V
1
1
0.1
0.1
20µs PULSE WIDTH
T
C
= 25°C
1
10
A
100
0.1
0.1
20µs PULSE WIDTH
T
C
= 175°C
1
10
100
A
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
2.4
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
100
I
D
= 26A
I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25°C
T
J
= 175°C
1.6
1.2
10
0.8
0.4
1
4
5
6
7
V
DS
= 25V
20µs PULSE WIDTH
8
9
10
0.0
V
GS
= 10V
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
A
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Normalized On-Resistance
Vs. Temperature
2015-12-1
3
AUIRFR4105
1200
1000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
iss
C
oss
= C
ds
+ C
gd
20
I
D
= 16A
V
DS
= 44V
V
DS
= 28V
16
C, Capacitance (pF)
800
C
oss
600
12
8
400
C
rss
200
4
0
1
10
100
A
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
I
D
, Drain Current (A)
100
10µs
T
J
= 175°C
T
J
= 25°C
100µs
10
1ms
10
1
0.4
0.8
1.2
1.6
V
GS
= 0V
A
2.0
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
100
A
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2015-12-1
AUIRFR4105
30
LIMITED BY PACKAGE
25
I
D
, Drain Current (A)
20
15
10
Fig 10a.
Switching Time Test Circuit
5
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.1
0.02
0.01
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-12-1
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