VS-VSKT320PbF Series
www.vishay.com
Vishay Semiconductors
Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 320 A
FEATURES
• High voltage
• Electrically isolated base plate
• 3600 V
RMS
isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
MAGN-A-PAK
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
PRIMARY CHARACTERISTICS
I
T(AV)
Type
Package
320 A
Modules - thyristor, standard
MAGN-A-PAK
This VSK series of MAGN-A-PAK modules uses high voltage
power thyristor/thyristor in doubler circuit configuration.
The semiconductors are electrically isolated from the metal
base, allowing common heatsinks and compact assemblies
to be built. They can be interconnected to form single phase
or three phase bridges or as AC-switches when modules are
connected in anti-parallel mode. These modules are
intended for general purpose applications such as battery
chargers, welders, motor drives, UPS, etc.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
t
V
DRM
/V
RRM
T
J
Range
50 Hz
60 Hz
50 Hz
60 Hz
70 °C
CHARACTERISTICS
VALUES
320
710
9000
9420
405
370
4050
1200 to 1600
-40 to +130
kA
2
s
kA
2
s
V
°C
A
UNITS
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
12
16
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
1200
1600
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
1300
1700
I
RRM
/I
DRM
AT 130 °C
MAXIMUM
mA
50
VS-VSKT320-
Revision: 26-Jul-2018
Document Number: 94085
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKT320PbF Series
www.vishay.com
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
t = 10 ms
Maximum peak, one-cycle on-state
non-repetitive, surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope
resistance
Maximum peak on-state or
forward voltage drop
Maximum holding current
Maximum latching current
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal
half wave,
initial T
J
=
T
J
maximum
VALUES
320
70
710
9000
9420
7570
7920
405
370
287
262
4050
0.80
1.03
0.75
m
0.53
1.40
V
1.37
500
1000
mA
kA
2
s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
),
T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
),
T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
I
TM
= 750 A, T
J
= 25 °C, 180° conduction,
average power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
)
2
I
TM
= 750 A, T
J
= T
J
maximum, 180° conduction,
average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
Anode supply = 12 V, initial I
T
= 30 A, T
J
= 25 °C
Anode supply = 12 V, resistive load = 1
,
gate pulse: 10 V, 100 μs, T
J
= 25 °C
V
TM,
V
FM,
I
H
I
L
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time range
SYMBOL
t
d
t
r
t
q
TEST CONDITIONS
T
J
= 25 °C, gate current = 1 A dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
I
TM
= 300 A; dI/dt = 15 A/μs; T
J
= T
J
maximum;
V
R
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100
VALUES
1.0
2.0
200 to 350
μs
UNITS
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
Critical rate of rise of off-state voltage
SYMBOL
I
RRM,
I
DRM
V
INS
dV/dt
TEST CONDITIONS
T
J
= T
J
maximum
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s
T
J
= T
J
maximum, exponential to 67 % rated V
DRM
VALUES
50
3600
1000
UNITS
mA
V
V/μs
Revision: 26-Jul-2018
Document Number: 94085
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKT320PbF Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GT
V
GT
TEST CONDITIONS
t
p
5 ms, T
J
= T
J
maximum
f = 50 Hz, T
J
= T
J
maximum
t
p
5 ms, T
J
= T
J
maximum
t
p
5 ms, T
J
= T
J
maximum
T
J
= - 40 °C
Maximum required DC gate voltage to trigger
T
J
= 25 °C
T
J
= T
J
maximum
T
J
= - 40 °C
Maximum required DC gate current to trigger
I
GT
V
GD
I
GD
dI/dt
T
J
= 25 °C
T
J
= T
J
maximum
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
Maximum rate of rise of turned-on current
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, I
TM
= 400 A,
rated V
DRM
applied
Anode supply = 12 V,
resistive load; Ra = 1
Anode supply = 12 V,
resistive load; Ra = 1
VALUES
10.0
2.0
3.0
5.0
4.0
3.0
2.0
350
200
100
0.25
10.0
500
V
mA
A/μs
mA
V
UNITS
W
A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Typical thermal resistance,
case to heatsink per module
Mounting
torque
± 10 %
MAGN-A-PAK to heatsink
busbar to MAGN-A-PAK
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after
a period of about 3 hours to allow for the
spread of the compound.
TEST CONDITIONS
VALUES
-40 to +130
0.125
K/W
0.02
UNITS
°C
4 to 6
Nm
Approximate weight
Case style
500
17.8
MAGN-A-PAK
g
oz.
R
CONDUCTION PER JUNCTION
DEVICES
VSKT320-
SINUSOIDAL CONDUCTION AT T
J
MAXIMUM
180°
0.009
120°
0.010
90°
0.013
60°
0.020
30°
0.032
RECTANGULAR CONDUCTION AT T
J
MAXIMUM
180°
0.007
120°
0.011
90°
0.015
60°
0.020
30°
0.033
UNITS
K/W
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 26-Jul-2018
Document Number: 94085
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKT320PbF Series
www.vishay.com
Vishay Semiconductors
650
600
550
500
450
400
350
300
250
200
150
100
50
0
0
94085_04
130
Maximum Allowable Case
Temperature (°C)
120
110
Ø
Maximum Average On-State
Power Loss (W)
R
thJC(DC)
= 0.125 K/W
100
90
80
70
60
0
50
100
150
200
30°
60°
Conduction angle
DC
180°
120°
90°
60°
30°
RMS limit
90°
120°
180°
Ø
Conduction angle
Per Junction
T
J
= 130 °C
100
200
300
400
500
250
300
350
94085_01
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 4 - On-State Power Loss Characteristics
130
R
thJC(DC)
= 0.125 K/W
8000
7500
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 130 °C
60 Hz 0.0083
s
50 Hz 0.0100
s
Maximum Allowable Case
Temperature (°C)
120
110
100
90
80
30° 60°
70
90°
60
50
0
100
200
300
400
500
120°
180°
DC
Ø
Peak Half
Sine
Wave
On-State Current (A)
7000
6500
6000
5500
5000
4500
4000
3500
1
Conduction angle
Per junction
10
100
94085_02
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
94085_05
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
500
9000
180°
120°
90°
60°
30°
RMS limit
8000
Maximum non-repetitive
surge
current
versus pulse train duration. Control
of conduction may not be maintained.
Initial T
J
= 130 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum Average On-State
Power Loss (W)
450
400
350
300
250
200
150
100
50
0
0
Peak Half
Sine
Wave
On-State Current (A)
7000
6000
5000
4000
Per junction
3000
0.01
Ø
Conduction angle
Per Junction
T
J
= 130 °C
100
200
300
400
0.1
1
94085_03
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
94085_06
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 26-Jul-2018
Document Number: 94085
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKT320PbF Series
www.vishay.com
Vishay Semiconductors
10 000
Instantaneous On-State Current (A)
T
J
= 130 °C
1000
T
J
= 25 °C
Per junction
100
0.5
1.5
2.5
3.5
4.5
94085_07
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
1
Z
thJC
- Transient Thermal
Impedance (°C/W)
0.1
Steady state
value
R
thJC
= 0.125 K/W
(DC operation)
0.01
0.001
0.001
94085_08
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-VS
1
1
2
3
4
5
-
-
-
-
-
KT
2
320
3
-
16
4
PbF
5
Vishay Semiconductors product
Circuit configuration (see dimensions - link at the end of datasheet)
Current rating
Voltage code x 100 = V
RRM
(see Voltage Ratings table)
• None = standard production
• PbF = lead (Pb)-free
Note
• To order the optional hardware go to
www.vishay.com/doc?95172
Revision: 26-Jul-2018
Document Number: 94085
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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