Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
* I
2
C Bus is a trademark of Philips Corporation.
ORDERING INFORMATION
See detailed ordering and shipping information on page 37 of this data sheet.
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended
Operating Ranges limits may affect device reliability.
Electrical Characteristics
at Ta = 25°C, VM = 5.0V, VCC = 3.3V
Parameter
Standby mode current drain
VM current drain
VCC current drain
VCC low-voltage cutoff voltage
Low-voltage hysteresis voltage
Thermal shutdown temperature
Thermal hysteresis width
Micro-step driver
Logic pin internal pull-down
resistance
Logic pin input current
IinL
IinH
Logic high-level voltage
Logic low-level voltage
Output on-resistance
VinH
VinL
Ronu
Rond
Ron
Output leakage current
Diode forward voltage
Chopping frequency
IOleak
VD
Fchop00
Fchop01
Fchop10
Fchop11
Current setting reference voltages
VSEN00
VSEN01
VSEN02
VSEN03
VSEN04
VSEN05
VSEN06
VSEN07
VSEN08
VSEN09
VSEN10
VSEN11
VSEN12
VSEN13
VSEN14
VSEN15
* : Design target value, not to be measured at production test.
Continued on next page.
ID = -100mA
0.45
280
140
420
210
0.185
0.175
0.165
0.155
0.145
0.135
0.125
0.115
0.105
0.095
0.085
0.075
0.065
0.055
0.045
0.035
0.75
400
200
600
300
0.200
0.190
0.180
0.170
0.160
0.150
0.140
0.130
0.120
0.110
0.100
0.090
0.080
0.070
0.060
0.050
VIN = 0, ENA, CLK1 to 2, FR1 to 2
VIN = 3.3V, ENA, CLK1 to 2, FR1 to 2
ENA, SCL, SDA, CLK1 to 2, FR1 to 2
ENA, SCL, SDA, CLK1 to 2, FR1 to 2
IO = 100mA, upper ON resistance
IO = 100mA, lower ON resistance
IO = 100mA, sum of upper- and lower-side
on resistance
1.0
1.1
520
260
780
390
0.215
0.205
0.195
0.185
0.175
0.165
0.155
0.145
0.135
0.125
0.115
0.105
0.095
0.085
0.075
0.065
A
V
kHz
kHz
kHz
kHz
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
0.38
0.22
0.6
1.0
16.5
0.6VCC
0.2VCC
33
1.0
66
A
A
V
V
Rin
ENA, CLK1 to 2, FR1 to 2
50
100
200
k
Symbol
Istn
IM
ICC
VthVCC
VthHYS
TSD
TSD
Design guarantee value *
Design guarantee value *
ENA = "L"
ENA = "H", IM1 + IM2, with no load
ENA = "H"
50
0.75
2.0
100
160
10
100
1.5
2.25
150
180
30
Conditions
Ratings
min
typ
max
1.0
200
3.0
2.5
200
200
50
Unit
A
A
mA
V
mV
C
C
www.onsemi.com
2
LV8414CS
Continued from preceding page.
Parameter
PI
(Photo sensor driving transistor)
Output on-resistance
Output leakage current
Schmitt buffer
Logic input high-level voltage
Logic input low-level voltage
VinH
VinL
BI1, BI2
BI1, BI2
0.5VCC
0.25VCC
V
V
Ron
IOleak
IO = 10mA
1.5
2.5
1.0
A
Symbol
Conditions
Ratings
min
typ
max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
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