MOSFET N-CH Enhancmnt Mode MOSFET
| 参数名称 | 属性值 |
| 产品种类 Product Category | MOSFET |
| 制造商 Manufacturer | Microchip(微芯科技) |
| RoHS | Details |
| 技术 Technology | Si |
| 安装风格 Mounting Style | Through Hole |
| 封装 / 箱体 Package / Case | TO-92-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 1.2 A |
| Rds On - Drain-Source Resistance | 500 mOhms |
| Vgs - Gate-Source Voltage | 20 V |
| 最小工作温度 Minimum Operating Temperature | - 55 C |
| 最大工作温度 Maximum Operating Temperature | + 150 C |
| Configuration | Single |
| Channel Mode | Enhancement |
| 系列 Packaging | Reel |
| 系列 Packaging | Cut Tape |
| Fall Time | 30 ns |
| 高度 Height | 5.33 mm |
| 长度 Length | 5.21 mm |
| Pd-功率耗散 Pd - Power Dissipation | 1 W |
| 产品 Product | MOSFET Small Signal |
| Rise Time | 10 ns |
| 工厂包装数量 Factory Pack Quantity | 2000 |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 50 ns |
| Typical Turn-On Delay Time | 10 ns |
| 宽度 Width | 4.19 mm |
| 单位重量 Unit Weight | 0.016000 oz |
| VN2210N3-G-P013 | VN2210N3-P002 | VN2210N3-P013 | VN2210N3-G-P014 | VN2210N3-G-P003 | |
|---|---|---|---|---|---|
| 描述 | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET 100V 0.35Ohm | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET N-CH Enhancmnt Mode MOSFET | |
| 产品种类 Product Category |
MOSFET | MOSFET | MOSFET | MOSFET | MOSFET |
| 制造商 Manufacturer |
Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) |
| RoHS | Details | No | No | Details | Details |
| 技术 Technology |
Si | Si | Si | Si | Si |
| 安装风格 Mounting Style |
Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| 封装 / 箱体 Package / Case |
TO-92-3 | TO-92-3 | TO-92-3 | TO-92-3 | TO-92-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V | 100 V | 100 V | 100 V | 100 V |
| Id - Continuous Drain Current | 1.2 A | 300 mA | 300 mA | 1.2 A | 1.2 A |
| Rds On - Drain-Source Resistance | 500 mOhms | 4 Ohms | 4 Ohms | 500 mOhms | 500 mOhms |
| Vgs - Gate-Source Voltage | 20 V | 20 V | 20 V | 20 V | 20 V |
| 最小工作温度 Minimum Operating Temperature |
- 55 C | - 55 C | - 55 C | - 55 C | - 55 C |
| 最大工作温度 Maximum Operating Temperature |
+ 150 C | + 150 C | + 150 C | + 150 C | + 150 C |
| Configuration | Single | Single | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement | Enhancement |
| Fall Time | 30 ns | 30 ns | 30 ns | 30 ns | 30 ns |
| 高度 Height |
5.33 mm | 5.33 mm | 5.33 mm | 5.33 mm | 5.33 mm |
| 长度 Length |
5.21 mm | 5.21 mm | 5.21 mm | 5.21 mm | 5.21 mm |
| Pd-功率耗散 Pd - Power Dissipation |
1 W | 1 W | 1 W | 1 W | 1 W |
| 产品 Product |
MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
| Rise Time | 10 ns | 10 ns | 10 ns | 10 ns | 10 ns |
| 工厂包装数量 Factory Pack Quantity |
2000 | 2000 | 2000 | 2000 | 2000 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Typical Turn-Off Delay Time | 50 ns | 50 ns | 50 ns | 50 ns | 50 ns |
| Typical Turn-On Delay Time | 10 ns | 10 ns | 10 ns | 10 ns | 10 ns |
| 宽度 Width |
4.19 mm | 4.19 mm | 4.19 mm | 4.19 mm | 4.19 mm |
| 单位重量 Unit Weight |
0.016000 oz | 0.007760 oz | 0.007760 oz | 0.016000 oz | 0.016000 oz |
| 系列 Packaging |
Cut Tape | - | - | Cut Tape | Cut Tape |
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