CPV364M4FPbF
www.vishay.com
Vishay Semiconductors
IGBT SIP Module
(Fast IGBT)
FEATURES
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
• HEXFRED
®
soft ultrafast diodes
• Optimized for medium speed, see fig. 1 for current vs.
frequency curve
• UL approved file E78996
• Designed and qualified for industrial level
IMS-2
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE
V
CES
I
RMS
per phase (4.6 kW total)
with T
C
= 90 °C
T
J
Supply voltage
Power factor
Modulation depth (see fig. 1)
V
CE(on)
(typical)
at I
C
= 15 A, 25 °C
Speed
Package
Circuit
600 V
18 A
RMS
125 °C
360 V
DC
0.8
115 %
1.35 V
1 kHz to 8 kHz
SIP
Three phase inverter
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current, each IGBT
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
Isolation voltage
Maximum power dissipation, each IGBT
Operating junction and storage
temperature range
Soldering temperature
Mounting torque
SYMBOL
V
CES
I
C
I
CM (1)
I
LM (2)
I
F
I
FM
V
GE
V
ISOL
P
D
T
J
, T
Stg
For 10 s, (0.063" (1.6 mm) from case)
6-32 or M3 screw
Any terminal to case, t = 1 min
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
T
C
= 25 °C
T
C
= 100 °C
TEST CONDITIONS
MAX.
600
27
15
80
A
80
9.3
80
± 20
2500
63
W
25
-40 to +150
°C
300
5 to 7
(0.55 to 0.8)
lbf · in
(N · m)
V
V
RMS
UNITS
V
Notes
(1)
Repetitive rating; V
GE
= 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2)
V
CC
= 80 % (V
CES
), V
GE
= 20 V, L = 10 μH, R
G
= 10
(see
fig. 19)
Revision: 10-Jun-15
Document Number: 94487
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CPV364M4FPbF
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, each IGBT, one IGBT in conduction
Junction to case, each DIODE, one DIODE in conduction
Case to sink, flat, greased surface
Weight of module
0.7
-
oz.
SYMBOL
R
thJC
(IGBT)
R
thJC
(DIODE)
R
thCS
(MODULE)
TYP.
-
-
0.10
20
MAX.
2.0
3.0
-
-
g
°C/W
UNITS
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown
voltage
Temperature coefficient of
breakdown voltage
SYMBOL
V
(BR)CES (1)
V
(BR)CES
T
J
TEST CONDITIONS
V
GE
= 0 V, I
C
= 250 μA
V
GE
= 0 V, I
C
= 1.0 mA
I
C
= 15 A
Collector to emitter saturation voltage
V
CE(on)
I
C
= 27 A
I
C
= 15 A, T
J
= 150 °C
Gate threshold voltage
Temperature coefficient of
threshold voltage
Forward transconductance
Zero gate voltage collector current
V
GE(th)
V
GE(th)
/T
J
g
fe (2)
I
CES
V
CE
= V
GE
, I
C
= 250 μA
V
CE
= 100 V, I
C
= 27 A
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C
I
C
= 15 A
I
C
= 15 A, T
J
= 150 °C
V
GE
= ± 20 V
See fig. 13
-
-
1.2
-
1.6
± 100
nA
V
GE
= 15 V
See fig. 2, 5
MIN.
600
-
-
-
-
3.0
-
9.2
-
-
-
TYP.
-
0.69
1.35
1.60
1.35
-
- 12
12
-
-
1.3
MAX.
-
-
1.5
-
V
-
6.0
-
-
250
μA
2500
1.7
V
mV/°C
S
UNITS
V
V/°C
Diode forward voltage drop
Gate to emitter leakage current
Notes
(1)
Pulse width
80 μs, duty factor
0.1 %
(2)
Pulse width 5.0 μs; single shot
V
FM
I
GES
Revision: 10-Jun-15
Document Number: 94487
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CPV364M4FPbF
www.vishay.com
Vishay Semiconductors
SYMBOL
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
C
ies
C
oes
C
res
t
rr
V
GE
= 0 V
V
CC
= 30 V
ƒ = 1.0 MHz
See fig. 7
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
See fig. 17
-
160
-
See fig. 16
See fig. 15
See fig. 14
-
-
I
F
= 15 A
V
R
= 200 V
dI/dt = 200 A/μs
-
-
-
-
74
4.0
6.5
80
220
188
120
6.0
A
10
180
nC
600
-
A/μs
T
J
= 150 °C
I
C
= 15 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 10
Energy losses include “tail” and
diode reverse recovery
See fig. 9, 10, 11, 18
T
J
= 25 °C
I
C
= 15 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 10
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 11, 18
TEST CONDITIONS
I
C
= 15 A
V
CC
= 400 V
V
GE
= 15 V
See fig. 8
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
100
15
37
42
18
220
160
0.46
0.86
1.32
39
19
410
290
2.5
2200
140
29
42
MAX.
160
23
56
-
-
ns
330
240
-
-
1.8
-
-
ns
-
-
-
-
-
-
60
ns
pF
mJ
mJ
nC
UNITS
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse recovery charge
I
rr
Diode reverse recovery charge
Diode peak rate of fall of recovery
during t
b
Q
rr
dI
(rec)M
/dt
Revision: 10-Jun-15
Document Number: 94487
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CPV364M4FPbF
www.vishay.com
Vishay Semiconductors
7.34
25
20
5.87
15
4.40
10
2.94
5
1.47
0
0.1
0.00
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of Fundamental)
100
30
I
C
, Collector-to-Emitter Current (A)
Maximum DC Collector Current(A)
T
J
= 25°C
T
J
= 150°C
25
20
10
15
10
5
1
1
V
GE
= 15V
20µs PULSE WIDTH
10
0
25
50
75
100
125
150
V
CE
, Collector-to-Emitter Voltage (V)
T
C
, Case Temperature (
°
C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Maximum Collector Current vs. Case Temperature
100
3.0
I
C
, Collector-to-Emitter Current (A)
T
J
= 150°C
10
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 30A
2.0
I
C
= 15A
T
J
= 25°C
I
C
= 7.5A
1
5
6
7
V
CC
= 50V
5µs PULSE WIDTH
8
9
10
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
V
GE
, Gate-to-Emitter Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig. 3 - Typical Transfer Characteristics
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Revision: 10-Jun-15
Document Number: 94487
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Total Output Power (kW)
LOAD CURRENT (A)
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
CPV364M4FPbF
www.vishay.com
Vishay Semiconductors
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
t
1
t
2
1
/t
2
0.01
0.00001
2. Peak T
J
= P
DM
x Z
thJC
+ T C
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
4000
V
GE
= 0V
f = 1 MHz
SHORTED
1.45
Cies = Cge + Cgc + Cce
Cres = Cce
Coes = Cce + Cgc
3000
C
ies
2000
Total Switching Losses (mJ)
V
CC
V
GE
T
J
I
C
= 480V
= 15V
= 25
°
C
= 15A
1.40
1.35
1000
C
oes
C
res
0
1
10
100
1.30
0
10
20
30
40
50
V
CE
, Collector-to-Emitter Voltage (V)
R
G
, Gate Resistance (
Ω
)
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
20
V
GE
, Gate-to-Emitter Voltage (V)
V
CC
= 400V
I
C
= 15A
10
R
G
= 10
Ω
V
GE
= 15V
V
CC
= 480V
I
C
=
30
A
16
Total Switching Losses (mJ)
I
C
=
15
A
I
C
=
7.5
A
1
12
8
4
0
0
20
40
60
80
100
120
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
Q
G
, Total Gate Charge (nC)
T
J
, Junction Temperature (
°
C )
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 10 - Typical Switching Losses vs. Junction Temperature
Revision: 10-Jun-15
Document Number: 94487
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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