• Load Switch, PA Switch and Battery Switch for Portable
Devices
S
1
D
2
D
3
6
D
5
D
S
4
Ordering Information:
SiB419DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1.60 mm
G
BFX
Part # code
XXX
Lot Traceability
and Date code
D
P-Channel MOSFET
Marking Code
G
1.60 mm
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
c, d
Symbol
V
DS
V
GS
I
D
Continuous Drain Current (T
J
= 150 °C)
Limit
- 12
±8
-9
-9
- 5.2
a, b
- 4.2
a, b
- 15
- 10.9
- 2.0
a, b
13.1
8.4
2.45
a, b
1.6
a, b
- 55 to 150
260
Unit
V
A
Pulsed Drain Current
Continuous Source-Drain Diode Current
I
DM
I
S
Maximum Power Dissipation
P
D
T
J
, T
stg
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
°C
THERMAL RESISTANCE RATINGS
Parameter
t
≤
5s
Maximum Junction-to-Ambient
a, e
°C/W
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See Solder Profile (
h
ttp://www.vishay.com/ppg?73257).
The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under Steady State conditions is 105 °C/W.
f. Based on T
C
= 25 °C.
g. Package Limited.
Document Number: 70440
S-82286-Rev. D, 22-Sep-08
www.vishay.com
1
Symbol
R
thJA
R
thJC
Typical
41
7.5
Maximum
51
9.5
Unit
New Product
SiB419DK
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 3.2 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 3.2 A, V
GS
= 0 V
- 0.8
26
10.4
14
12
T
C
= 25 °C
- 10.9
15
- 1.2
39
16
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 6 V, R
L
= 1.46
Ω
I
D
≅
- 4.1 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= - 6 V, V
GS
= - 5 V, I
D
= - 5.2 A
V
DS
= - 9.6 V, V
GS
= - 4.5 V, I
D
= - 5.2 A
V
DS
= - 6 V, V
GS
= 0 V, f = 1 MHz
562
175
121
7.88
7.15
0.94
1.85
7.5
16
42
28
9
24
63
42
13.5
ns
Ω
11.82
10.73
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 12 V, V
GS
= 0 V
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 5.2 A
V
GS
= - 2.5 V, I
D
= - 4.4 A
V
GS
= - 1.8 V, I
D
= - 0.90 A
V
DS
= - 6 V, I
D
= - 5.2 A
15
0.049
0.068
0.089
11
0.060
0.082
0.114
S
Ω
- 0.4
- 12
- 12.15
5.6
- 1.0
± 100
-1
- 10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70440
S-82286-Rev. D, 22-Sep-08
New Product
SiB419DK
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
15
V
GS
= 5 thru 3
V
12
I
D
- Drain Current (A)
V
GS
= 2.5
V
I
D
- Drain Current (A)
2.4
3.0
9
V
GS
= 2
V
6
1.8
T
J
= 25 °C
1.2
T
J
= 125 °C
0.6
3
V
GS
= 1.5
V
T
J
= - 55 °C
0
0.0
0.6
1.2
1.8
2.4
3.0
0.0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.30
1000
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.24
V
GS
= 1.8
V
C - Capacitance (pF)
0.18
800
600
C
iss
0.12
V
GS
= 2.5
V
0.06
V
GS
= 4.5
V
400
C
oss
200
C
rss
0
0.00
0
3
6
9
12
15
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
5
I
D
= 5.2 A
V
GS
- Gate-to-Source
Voltage
(V)
4
R
DS(on)
- On-Resistance
(Normalized)
V
DS
= 6
V
1.5
1.8
Capacitance
V
GS
= 4.5
V
I
D
= 5.2 A
V
GS
= 2.5
V
I
D
= 4.4 A
3
V
DS
= 9.6
V
2
1.2
V
GS
= 1.8
V
I
D
= 0.94 A
0.9
1
0.6
0
0
2
4
6
8
10
Q
g
- Total Gate Charge (nC)
0.3
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 70440
S-82286-Rev. D, 22-Sep-08
On-Resistance vs. Junction Temperature
www.vishay.com
3
New Product
SiB419DK
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
0.18
I
D
= 5.2 A
0.15
I
S
- Source Current (A)
1
R
DS(on)
- On-Resistance (Ω)
0.12
0.1
T
J
= 150 °C
0.09
T
A
= 125 °C
0.06
T
A
= 25 °C
0.03
0.01
T
J
= 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Soure-Drain Diode Forward Voltage
1.0
20
On-Resistance vs. Gate-to-Source Voltage
0.9
I
D
= 250
µA
V
GS(th)
(V)
Power (W)
0.8
15
10
0.7
5
0.6
0.5
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Pulse (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
*Limited
by
R
DS(on)
10
I
D
- Drain Current (A)
I
DM
Limited
Single Pulse Power, Junction-to-Ambient
10 ms
100 ms
1
1s
10 s
DC
0.1
0.01
T
A
= 25 C
Single Pulse
BVDSS Limited
0.001
0.1
*
V
GS
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 70440
S-82286-Rev. D, 22-Sep-08
New Product
SiB419DK
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
15
16
12
I
D
- Drain Current (A)
Power Dissipation (W)
12
9
8
6
4
3
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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