Si4544DY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
P-Channel
30
- 30
R
DS(on)
(Ω)
0.035 at V
GS
= 10 V
0.050 at V
GS
= 4.5 V
0.045 at V
GS
= - 10 V
0.090 at V
GS
= - 4.5 V
I
D
(A)
± 6.5
± 5.4
± 5.7
± 4.0
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
D
D
D
G
1
D
G
2
Ordering Information:
Si4544DY-T1-E3
(Lead (Pb)-free)
Si4544DY-T1-GE3
(Lead (Pb)-free and Halogen-free)
S
1
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
N-Channel
30
± 20
± 6.5
± 5.4
± 20
1.7
2.4
1.5
- 55 to 150
P-Channel
- 30
± 20
± 5.7
± 4.0
± 20
- 1.7
W
°C
A
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambient
a
Symbol
R
thJA
N- or P-Channel
52
Unit
°C/W
Notes:
a. Surface Mounted on FR4 board, t
≤
10 s.
Document Number: 70768
S09-0868-Rev. D, 18-May-09
www.vishay.com
1
Si4544DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
On-State Drain Current
a
I
D(on)
V
DS
≥
- 5 V, V
GS
= - 10 V
V
DS
≥
5 V, V
GS
= 4.5 V
V
DS
≥
- 5 V, V
GS
= - 4.5 V
V
GS
= 10 V, I
D
= 6.5 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V, I
D
= - 5.7 A
V
GS
= 4.5 V, I
D
= 5.4 A
V
GS
= - 4.5 V, I
D
= - 4.0 A
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
P-Channel
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 5.7 A
N-Ch
N-Channel
V
DS
= 15 V, V
GS
= 10 V, I
D
= 6.5 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
P-Channel
V
DD
= - 15 V, R
L
= 15
Ω
I
D
≅
- 1 A, V
GEN
= - 10 V, R
g
= 6
Ω
I
F
= 1.7 A, dI/dt = 100 A/µs
I
F
= - 1.7 A, dI/dt = 100 A/µs
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
18
19
4.2
4.5
3.5
3.6
13
13
12
15
31
37
10
14
30
35
30
30
30
30
60
70
30
30
70
70
ns
35
40
nC
g
fs
V
SD
V
DS
= 15 V, I
D
= 6.5 A
V
DS
= - 15 V, I
D
= - 5.7 A
I
S
= 1.7 A, V
GS
= 0 V
I
S
= - 1.7 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
- 20
5
-5
0.027
0.036
0.038
0.060
15
9
0.75
- 0.75
1.2
- 1.2
0.035
0.045
0.050
0.090
S
V
Ω
A
1.0
- 1.0
± 100
± 100
1
-1
5
-5
µA
V
nA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70768
S09-0868-Rev. D, 18-May-09
Si4544DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C unless otherwise noted
20
V
GS
= 10 V thru 5 V
4V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
16
20
12
12
8
8
T
C
= 125 °C
4
25 °C
- 55 °C
0
4
3V
0
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.06
1500
Transfer Characteristics
0.05
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
V
GS
= 4.5 V
C
iss
1200
0.04
900
0.03
V
GS
= 10 V
600
C
oss
C
rss
0
0.02
0.01
300
0.00
0
4
8
12
16
20
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
V
DS
= 15 V
I
D
= 6.5 A
R
DS(on)
- On-Resistance
(Normalized)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
4
8
12
16
20
0.4
- 50
V
GS
= 10 V
I
D
= 6.5 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
8
6
4
2
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70768
S09-0868-Rev. D, 18-May-09
www.vishay.com
3
Si4544DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C unless otherwise noted
20
0.12
10
I
S
- Source Current (A)
R
DS(on)
- On-Resistance (Ω)
0.09
I
D
= 6.5 A
0.06
T
J
= 150 °C
T
J
= 25 °C
0.03
1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.00
1
3
5
7
9
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.6
I
D
= 250 µA
0.3
V
GS(th)
Variance (V)
32
40
On-Resistance vs. Gate-to-Source Voltage
- 0.3
Power (W)
0.0
24
16
- 0.6
8
- 0.9
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (s)
10
30
T
J
- Temperature (°C)
Threshold Voltage
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Single Pulse Power
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (s)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 52 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
1
10
30
Normalized Thermal Transient Impedance, Junction-to-Ambient
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4
Document Number: 70768
S09-0868-Rev. D, 18-May-09
Si4544DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C unless otherwise noted
20
V
GS
= 10 V thru 5 V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
16
20
12
4V
8
12
8
T
C
= 125 °C
4
25 °C
4
3V
0
0
2
4
6
8
10
- 55 °C
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.16
1500
Transfer Characteristics
C
iss
R
DS(on)
- On-Resistance (Ω)
1200
0.12
C - Capacitance (pF)
900
0.08
V
GS
= 4.5 V
600
C
oss
300
C
rss
V
GS
= 10 V
0.04
0.00
0
4
8
12
16
20
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
V
DS
= 10 V
I
D
= 5.7 A
V
GS
- Gate-to-Source Voltage (V)
8
R
DS(on)
- On-Resistance
1.4
(Normalized)
1.2
1.0
0.8
0.6
0
0
4
8
12
16
20
0.4
- 50
1.8
1.6
V
GS
= 10 V
I
D
= 5.7 A
Capacitance
6
4
2
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70768
S09-0868-Rev. D, 18-May-09
www.vishay.com
5
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