VS-50PF(R)...(W) High Voltage Series
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Vishay Semiconductors
Standard Recovery Diodes,
Generation 2 DO-5 (Stud Version), 50 A
FEATURES
50PF(R)...
50PF(R)...W
• High surge current capability
• Designed for a wide range of applications
• Stud cathode and stud anode version
• Wire version available
• Low thermal resistance
• Designed and qualified for multiple level
DO-5 (DO-203AB)
DO-5 (DO-203AB)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
50 A
DO-5 (DO-203AB)
Single
• Converters
• Power supplies
• Machine tool controls
• Welding
• Any high voltage input rectification bridge
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
T
C
TEST CONDITIONS
VALUES
50
128
78
570
595
1600
1450
1400 to 1600
-55 to +160
UNITS
A
°C
A
A
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-50PF(R)...(W)
VOLTAGE
CODE
140
160
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
1400
1600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1650
1900
I
RRM
MAXIMUM
AT T
J
= 150 °C
mA
4.5
Revision: 11-Jan-18
Document Number: 93517
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50PF(R)...(W) High Voltage Series
www.vishay.com
Vishay Semiconductors
SYMBOL
I
F(AV)
I
F(RMS)
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
TEST CONDITIONS
180° conduction, half sine wave
VALUES
50
128
78
570
595
480
Sinusoidal half wave,
initial T
J
= 150 °C
500
1600
1450
1150
1050
16 000
0.77
4.30
1.50
A
2
s
V
m
V
A
2
s
A
UNITS
A
°C
A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one cycle forward,
non-repetitive surge current
I
FSM
Maximum I
2
t for fusing
I
2
t
Maximum
I
2
t
for fusing
I
2
t
V
F(TO)
r
f
V
FM
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 125 A, T
J
= 25 °C, t
p
= 400 μs rectangular wave
Low level value of threshold voltage
Low level value of forward slope resistance
Maximum forward voltage drop
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Thermal resistance,
case to heatsink
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated thread, tighting on nut
(1)
Maximum allowable
mounting torque
(+0 %, -10 %)
Lubricated thread, tighting on nut
(1)
Not lubricated thread, tighting on hexagon
(2)
Lubricated thread, tighting on hexagon
(2)
Approximate weight
Case style
See dimensions - link at the end of datasheet
TEST CONDITIONS
VALUES
-55 to 160
0.51
K/W
0.25
3.4
(30)
2.3
(20)
4.2
(37)
3.2
(28)
15.8
0.56
DO-5 (DO-203AB)
g
oz.
N·m
(lbf · in)
UNITS
°C
Notes
(1)
Recommended for pass-through holes
(2)
Torque must be appliable only to hexagon and not to plastic structure, recommended for holed heatsink
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.11
0.16
0.20
0.29
0.49
RECTANGULAR CONDUCTION
0.10
0.16
0.22
0.31
0.50
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93517
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50PF(R)...(W) High Voltage Series
www.vishay.com
Vishay Semiconductors
600
Peak Half Sine Wave Forward Current (A)
180
Maximum Allowable Case Temperature (°C)
170
160
150
140
130
120
110
100
0
10
20
50PF(R) Series
140 to 160
RthJC = 0.51K/W
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = Tj Max.
500
No Voltage Reapplied
Rated Vrrm Reapplied
450
550
400
350
300
250
200
150
100
0.01
50PF(R) Series
40HF(R) Series
140 to 160
180˚ Sine
30
40
50
60
0.1
Pulse Train Duration (s)
1
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Maximum Non-Repetitive Surge Current
550
Peak Half Sine Wave Forward Current (A)
500
450
400
350
300
250
200
150
100
1
Instantaneous Forward Current (A)
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = Tj Max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
Tj = Tj Max
100
Tj = 25˚C
10
50PF(R) Series
40HF (R) Series
140 to 160
50PF(R) Series
140 to 160
10
100
1
0
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous Forward Voltage (V)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 2 - Maximum Non-Repetitive Surge Current
Fig. 4 - Forward Voltage Drop Characteristics
Transient Thermal Impedance Z
thJC
(K/W)
1
Steady State Value
RthJC = 0.51 K/W
(DC Operation)
0.1
50PF(R) Series
50PF(R) Series
140 to 160
0.01
0.0001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 5 - Thermal Impedance Z
thJC
Characteristics
Revision: 11-Jan-18
Document Number: 93517
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50PF(R)...(W) High Voltage Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
50
PF
R
160
W
1
1
2
3
4
5
6
2
-
-
-
-
-
-
3
4
5
6
Vishay
Semiconductors
product
50 =
standard
device
PF = plastic package
None =
stud
normal polarity (cathode to
stud)
R =
stud
reverse polarity (anode to
stud)
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
None =
standard
terminal
(see dimensions for 50PF(R)... - link at the end of datasheet)
W = wire terminal
(see dimensions for 50PF(R)...W - link at the end of datasheet)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95345
Revision: 11-Jan-18
Document Number: 93517
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
DO-203AB (DO-5) for 50PF(R)...(W), 80PF(R)...(W),
and 95PF(R)...(W) Series
DIMENSIONS FOR 80PF(R), 50PF(R), AND 95PF(R) SERIES
in millimeters
6.45 MIN.
Ø3
4.2 MAX.
1.2 MAX.
3.5 MIN.
4 MIN.
Plastic cap.
25.4 MAX.
11.45 MAX.
2.4 REF.
11 ± 0.4
1/4"28-UNF-2A
17.25 MAX.
Ø 15.95 MAX.
Ø 17.15 MAX.
18.9
+ 0.1
0.0
Revision: 20-Apr-16
Document Number: 95345
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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