VS-ST280S Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 280 A
FEATURES
• Center amplifying gate
• International standard case TO-93 (TO-209AB)
• Hermetic metal case with glass-metal seal
insulator
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
TO-93 (TO-209AB)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
280 A
400 V, 600 V
1.28 V
150 mA
-40 °C to +125 °C
TO-93 (TO-209AB)
Single SCR
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
280
T
C
85
440
7850
8220
308
281
400/600
100
-40 to +125
kA
2
s
V
μs
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
06
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
400
600
V
RSM
, MAXIMUM
I
/I
MAXIMUM AT
NON-REPETITIVE PEAK VOLTAGE
DRM RRM
T
J
= T
J
MAXIMUM mA
V
500
700
30
VS-ST280S
Revision: 27-Sep-17
Document Number: 94402
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST280S Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
VALUES
280
85
DC at 75 °C case temperature
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Maximum (typical) latching current
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
440
7850
8220
6600
Sinusoidal half wave,
initial T
J
= T
J
maximum
6900
310
220
218
200
3100
0.84
0.88
0.50
0.47
1.28
600
1000 (300)
kA
2
s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 880 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 12 V resistive load
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
Gate drive 20 V, 20
,
t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 300 A, T
J
= T
J
maximum, dI/dt = 20 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
,
t
p
= 500 μs
VALUES
1000
1.0
μs
100
UNITS
A/μs
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I
RRM,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
30
UNIT
S
V/μs
mA
Revision: 27-Sep-17
Document Number: 94402
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST280S Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
I
GT
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, t
p
5 ms
T
J
= - 40 °C
DC gate current required to trigger
T
J
= 25 °C
T
J
= 125 °C
T
J
= - 40 °C
DC gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
DC gate current not to trigger
I
GD
T
J
= T
J
maximum
DC gate voltage not to trigger
V
GD
Maximum gate current/voltage not to
trigger is the maximum value which will
not trigger any unit with rated V
DRM
anode to cathode applied
Maximum required gate trigger/current/
voltage are the lowest value which will
trigger all units 12 V anode to cathode
applied
180
90
40
2.9
1.8
1.2
10
VALUES
TYP.
MAX.
UNIT
S
W
A
V
-
150
-
-
3.0
-
mA
V
mA
10.0
2.0
3.0
20
5.0
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Lubricated threads
TEST CONDITIONS
VALUES
-40 to +125
-40 to +150
0.105
0.04
31 (275)
24.5 (210)
280
UNITS
°C
K/W
N·m
(lbf · in)
g
TO-93 (TO-209AB)
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.016
0.019
0.025
0.036
0.060
RECTANGULAR CONDUCTION
0.012
0.020
0.027
0.037
0.060
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94402
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST280S Series
www.vishay.com
Maximum Allowable Cas T
e emperature (°C)
130
120
110
Conduc tion Period
Vishay Semiconductors
S 280S S
T
eries
R
thJC
(DC) = 0.105 K/ W
Maximum Allowable Case Temperature (°C)
130
S 280SS
T
eries
R
thJC
(DC) = 0.105 K/ W
120
110
Conduc tion Angle
100
90
30°
80
70
0
50 100 150 200 250 300 350 400 450
Average On-state Current (A)
60°
90°
120°
180°
DC
100
90
30°
60°
90°
200
120°
250
80
0
50
100
150
Average On-state Current (A)
180°
300
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
350
300
250
200
150
Conduc tion Angle
180°
120°
90°
60°
30°
RMSLimit
h
R
t
0.
16
SA
0.
2
0.
25
0.3
K/
W
K/
W
=
1
0.
W
K/
K/
W
ta
el
-D
0.4
K/
W
R
K/
W
100
50
0
0
50
100
150
200
250
S 280SS
T
eries
T = 125°C
J
0.6
K/ W
0.8 K
/W
1.2 K
/W
300
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
500
450
400
350
300
250
DC
180°
120°
90°
60°
30°
h
R
t
0.
08
MS
200 R Limit
150
100
50
0
0
Conduc tion Period
K/
W
0.
16
K/
W
0. 2
K/
W
0.3
K/ W
0.4
K/ W
0.6 K
/W
0.
12
06
0.
K/
W
W
K/
A
S
=
03
0.
W
K/
-D
ta
el
R
S 280S S
T
eries
T = 125°C
J
1 K/ W
50 100 150 200 250 300 350 400 450
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94402
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST280S Series
www.vishay.com
Vishay Semiconductors
Pea k Half S Wave On-sta te Current (A)
ine
7000
6500
6000
5500
5000
4500
4000
3500
3000
1
10
100
Number Of Equa l Amplitude Half Cyc le Current Pulses (N)
Peak Half S Wave On-state Current (A)
ine
7000
6500
6000
5500
5000
4500
4000
3500
3000
1
At Any R
ated Load Condition And With
R
ated V
RRM
Applied F
ollowing S
urge.
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated V
RRM
Applied F
ollowing S
urge.
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
S 280SS
T
eries
S 280S S
T
eries
10
100
Number Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
Instantaneous On-state Current (A)
T = 25°C
J
T = 125°C
J
1000
S 280SS
T
eries
100
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
T
ransient T
hermal Impedance Z
thJC
(K/ W)
1
S
teady S
tate Value
R
thJC
= 0.105 K/ W
(DC Operation)
0.1
0.01
S 280SS
T
eries
0.001
0.001
0.01
0.1
S
quare Wave Pulse Duration (s)
1
10
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 27-Sep-17
Document Number: 94402
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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