Operating Temperature Range ......................... -40°C to +105°C
Junction Temperature ......................................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................. +300°C
Soldering Temperature (reflow) ....................................... +260°C
Absolute Maximum Ratings
V
DDA
to GNDA .......................................................-0.3V to +6V
V
DDB
to GNDB ........................................................-0.3V to +6V
V
LDO
to GNDB ......................................................-0.3V to +16V
TD1, TD2 to GNDA ..............................................-0.3V to +12V
TXD, DE,
RE
to GNDA ...........................................-0.3V to +6V
RXD to GNDA......................................... -0.3V to (V
DDA
+ 0.3V)
DEM to GNDB ........................................................-0.3V to +6V
A, B to GNDB ...........................................................-8V to +13V
TD1, TD2 Continuous Current ...........................................±1.4A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics
(Note 1)
Junction-to-Ambient Thermal Resistance (θ
JA
) ..............71°C/W
Junction-to-Case Thermal Resistance (θ
JC
) ...................23°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
DC Electrical Characteristics
(V
DDA
- V
GNDA
= 3.0V to 5.5V, V
DDB
- V
GNDB
= 4.5V to 5.5V, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at V
DDA
- V
GNDA
= 3.3V, V
DDB
- V
GNDB
= 5V, V
GNDA
= V
GNDB
, and T
A
= +25°C.) (Notes 2, 3)
PARAMETER
POWER
Supply Voltage
V
DDA
V
DDB
I
DDA
I
DDB
Undervoltage-Lockout
Threshold
Undervoltage-Lockout
Threshold Hysteresis
TRANSFORMER DRIVER
Output Resistance
TD1, TD2 Current Limit
Switching Frequency
Duty Cycle
Crossover Dead Time
R
O
ILIM
fSW
D
tDEAD
TD1/TD2 = low, I
OUT
= 300mA
4.5V ≤ V
DDA
≤ 5.5V
3.0V ≤ V
DDA
≤ 3.6V
540
485
350
0.6
785
730
450
50
50
1.5
1300
1170
550
Ω
mA
kHz
%
ns
V
UVLOA
V
UVLOB
V
UVHYSTA
V
UVHYSTB
V
DDA
= 5V, DE = high,
RE
= TXD =
low, RXD unconnected, no bus load,
TD1/TD2 unconnected
DE = high,
RE
= TXD = low, RXD un-
connected, no bus load, V
DDB
= 5V
RE,
RXD, DE, TXD, V
DDA
rising
TD1/TD2 driver, V
DDA
rising
V
DDB
rising
RE,
RXD, DE, TXD
TD1/TD2 driver
1.50
2.55
2.55
3.0
4.5
4.7
7.7
1.58
2.7
2.7
50
200
200
mV
5.5
5.5
7.7
mA
12.5
1.65
2.85
2.85
V
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Current
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Maxim Integrated
│
2
MAX14943
5kV
RMS
Isolated 20Mbps Half-Duplex PROFIBUS DP/
RS-485 Transceiver with ±35kV ESD Protection and
Integrated Transformer Driver
DC Electrical Characteristics (continued)
(V
DDA
- V
GNDA
= 3.0V to 5.5V, V
DDB
- V
GNDB
= 4.5V to 5.5V, TA = T
MIN
to T
MAX
, unless otherwise noted. Typical values are at V
DDA
- V
GNDA
= 3.3V, V
DDB
- V
GNDB
= 5V, V
GNDA
= V
GNDB
, and T
A
= +25°C.) (Notes 2, 3)
PARAMETER
LDO
LDO Supply Voltage
LDO Supply Current
LDO Output Voltage
LDO Current Limit
Load Regulation
Line Regulation
Dropout Voltage
Load Capacitance
LOGIC INTERFACE (TXD, RXD, DE,
RE,
DEM)
Input High Voltage
Input Low Voltage
Input Hysteresis
Input Capacitance
Input Pullup Current
Input Pulldown Current
VIH
VIL
VHYS
CIN
IPU
IPD
RE,
TXD, DE to GNDA
RE,
TXD, DE to GNDA
RE,
TXD, DE to GNDA
RE,
TXD, DE, f = 1MHz
TXD
DE,
RE
RXD to GNDA, IOUT = -4mA
DEM to GNDB, IOUT = -4mA
Output Voltage Low
VOL
RXD to GNDA, IOUT = 4mA
DEM to GNDB, IOUT = 4mA
0V ≤ V
RXD
≤ V
DDA, V
A
- V
B
> -50mV,
RE
= low
0V ≤ V
DEM
≤ V
DDB, DE = high
ISH_PD
IOZ
0V ≤ V
RXD
≤ V
DDA, V
A
- V
B
< -200mV,
RE
= low
0V ≤ V
DEM
≤ V
DDB, DE = low
0V ≤ V
RXD
≤ V
DDA,
RE
= high
-1
-42
-42
+40
+40
+1
µA
mA
-10
1.5
VDDA
-0.4
VDDB
-0.4
0.40
0.40
220
2
-4.5
4.5
-1.5
10
0.7 x
VDDA
0.8
V
V
mV
pF
µA
µA
VLDO = 5.68V, ILOAD = 20mA to 40mA
VLDO = 5.68V to 14V, ILOAD = 20mA
VLDO = 4.68V, IDDB = 120mA
Nominal value (Note 5)
1
VLDO
ILDO
VDDB
Relative to GNDB, LDO is on (Note 4)
DE = high, TXD = low, no bus load,
V
LDO
= 5.5V
4.5
4.68
7.8
5
300
0.19
0.12
100
1.7
1.8
180
10
14
12.9
5.5
V
mA
V
mA
mV/mA
mV/V
mV
µF
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Output Voltage High
VOH
V
V
Short-Circuit Output Pullup
Current
ISH_PU
mA
Short-Circuit Output Pulldown
Current
Three-State Output Current
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Maxim Integrated
│
3
MAX14943
5kV
RMS
Isolated 20Mbps Half-Duplex PROFIBUS DP/
RS-485 Transceiver with ±35kV ESD Protection and
Integrated Transformer Driver
DC Electrical Characteristics (continued)
(V
DDA
– V
GNDA
= 3.0V to 5.5V, V
DDB
– V
GNDB
= 4.5V to 5.5V, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at
V
DDA
– V
GNDA
= 3.3V, V
DDB
– V
GNDB
= 5V, V
GNDA
= V
GNDB
, and T
A
= +25°C.) (Notes 2, 3)
PARAMETER
DRIVER
RL
= 54Ω, TXD = high or low,
DE = high, Figure 1a
Differential Driver Output
|VOD|
RL
= 100Ω, TXD = high or low,
DE = high, Figure 1a
-7V ≤ V
CM
≤ +12V, Figure 1b
Differential Driver Peak-to-Peak
Output
Change in Magnitude of
Differential Driver Output Voltage
Driver Common-Mode Output
Voltage
Change in Magnitude of
Common-Mode Voltage
Driver Short-Circuit Output
Current
VODPP
ΔV
OD
VOC
ΔV
OC
Figure 2 (Note 6)
RL
= 54Ω, Figure 1b (Note 7)
RL
= 54Ω, Figure 1a
RL
= 54Ω, Figure 1a (Note 7)
GNDB ≤ V
OUT
≤ +12V, output low
(Note 8)
-7V ≤ V
OUT
≤ V
DDB, output high
(Note 8)
(VDDB
– 1V) ≤ V
OUT
≤ +12V,
output low (Notes 5, 8)
-7V ≤ V
OUT
≤ +1V, output high
(Note 5, 8)
DE = GNDA,
VDDB = GNDB
or 5.5V
-7V ≤ V
CM
≤ +12V
VCM = 0V
-7V ≤ V
CM
≤ +12V, DE = low
Measured between A and B,
DE =
RE
= GNDA at 6MHz
Temperature Rising
Human Body Model
IEC 61000-4-2 Air Gap Discharge
IEC 61000-4-2- Contact Discharge
Human Body Model
48
8
VIN = +12V
VIN = -7V
-200
-200
-125
15
-50
-250
+15
mA
-15
+250
-0.2
2.1
2.9
1.5
4.0
-0.2
1.8
5
6.8
+0.2
3
+0.2
+250
mA
V
V
V
V
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
IOSD
Driver Short-Circuit Foldback
Output Current
RECEIVER
Input Current (A and B)
Receiver Differential Threshold
Voltage
Receiver Input Hysteresis
Receiver Input Resistance
Differential Input Capacitance
PROTECTION
Thermal-Shutdown Threshold
Thermal-Shutdown Hysteresis
ESD Protection
(A and B Pins to GNDB)
ESD Protection (All Other Pins)
IOSDF
IA, IB
VTH
ΔV
TH
RIN
CA,B
T
SHDN
T
HYST
µA
mV
mV
kΩ
pF
+160
15
±35
±12
±10
±4
°C
°C
kV
kV
www.maximintegrated.com
Maxim Integrated
│
4
MAX14943
5kV
RMS
Isolated 20Mbps Half-Duplex PROFIBUS DP/
RS-485 Transceiver with ±35kV ESD Protection and
Integrated Transformer Driver
Switching Electrical Characteristics
(V
DDA
- V
GNDA
= 3.0V to 5.5V, V
DDB
- V
GNDB
= 4.5V to 5.5V, TA = T
MIN
to T
MAX
, unless otherwise noted. Typical values are at V
DDA
- V
GNDA
= 3.3V, V
DDB
- V
GNDB
= 5V, V
GNDA
= V
GNDB
, and TA = +25°C.) (Note 5)
PARAMETER
DYNAMIC
Common Mode Transient
Immunity
Glitch Rejection
DRIVER
Driver Propagation Delay
Differential Driver Output Skew
|tDPLH - tDPHL|
Driver Differential Output Rise
or Fall Time
Maximum Data Rate
Driver Enable to Output High
Driver Enable to Output Low
Driver Disable Time from Low
Driver Disable Time from High
RECEIVER
Receiver Propagation Delay
Receiver Output Skew
Maximum Data Rate
Receiver Enable to Output
High
Receiver Enable to Output Low
Receiver Disable Time from
Low
Receiver Disable Time from
High
tDPLH, tDPHL
tDSKEW
tLH, tHL
DRMAX
tDZH
tDZL
tDLZ
tDHZ
tRPLH, tRPHL
tRSKEW
DRMAX
tRZH
tRZL
tRLZ
tRHZ
RL
= 1kΩ, C
L = 15pF, S2 closed, Figure 9
RL
= 1kΩ, C
L = 15pF, S2 closed, Figure 9
RL
= 1kΩ, C
L = 15pF, S1 closed,
Figure 9
RL
= 1kΩ, C
L = 15pF, S2 closed,
Figure 9
RL
= 500Ω, C
L = 50pF, Figure 5
RL
= 500Ω, C
L = 50pF, Figure 6
RL
= 500Ω, C
L = 50pF, Figure 6
RL
= 500Ω, C
L = 50pF, Figure 5
CL = 15pF, Figure 7 and Figure 8
(Note 10)
CL = 15pF, Figure 7 and Figure 8
(Note 10)
20
20
30
20
20
RL
= 54Ω, C
L = 50pF, Figure 3 and
Figure 4
RL
= 54Ω, C
L = 50pF, Figure 3 and
Figure 4
R
L
= 54Ω, C
L = 50pF, Figure 3 and
Figure 4
20
88
88
80
80
68
6
68
6
15
ns
ns
ns
Mbps
ns
ns
ns
ns
ns
ns
Mbps
ns
ns
ns
ns
CMTI
(Note 9)
TXD, DE, RXD
10
35
17
29
kV/μs
ns
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Note 2:
All devices are 100% production tested at T
A
= +25°C. Specifications over temperature are guaranteed by design.
Note 3:
All currents into the device are positive. All currents out of the device are negative. All voltages are referenced to their
respective ground (GNDA or GNDB), unless otherwise noted.
Note 4:
V
LDO
max indicates voltage capability of the circuit. Power dissipation requirements may limit V
LDO
max to a lower value.
Note 5:
Not production tested. Guaranteed by design.
Note 6:
V
ODPP
is the difference in V
OD
when TXD is high and when TXD is low.
Note 7:
ΔV
OD
and ΔV
OC
are the changes in V
OD
and V
OC
, respectively, when the TXD input changes state.
Note 8:
The short-circuit output current applies to the peak current just prior to foldback-current limiting. The short-circuit foldback
output current applies during current limiting to allow a recovery from bus contention. See TOC6 and TOC7 in the
Typical
Operating Characteristics
section..
Note 9:
CMTI is the maximum sustainable common-mode voltage slew rate while maintaining the correct output states. CMTI
applies to both rising and falling common-mode voltage edges. Tested with the transient generator connected between
GNDA and GNDB. ΔV
CM
= 1kV.
Note 10:
Capacitive load includes test probe and fixture capacitance.
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