Operating Temperature Range ........................... -40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature Soldering (10s) ..................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Package Thermal Characteristics
(Note 1)
WLP
Junction-to-Ambient Thermal Resistance (θ
JA
) ..........46°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Electrical Characteristics
(V
CHGIN
= 5.0V, V
BAT
= 3.7V, T
A
= -40°C to +85°C, all registers in their default state, unless otherwise noted. Typical values are at
T
A
= +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
All functions disabled
Charger Input Current
I
CHG
Power on, V
CHGIN
= 5V
SYS switch closed, buck regulators in
burst mode, LDO1 enabled, I
SYS
= 0A,
I
B_OUT
= 0A, I
L_OUT
= 0A
Power off, V
CHGIN
= 0V,
SYS switch open
Power on, V
CHGIN
= 0V
SYS switch closed, 2x buck regulators
in Burst mode, LDOs disabled.
I
SYS
= 0A, I
B_OUT
= 0A
BAT Input Current
I
BAT
Power on, V
CHGIN
= 0V
SYS switch closed, 2x buck regulators
in Burst mode, LDO1 enabled,
I
SYS
= 0A, I
B_OUT
= 0A, I
L_OUT
= 0A
Power on, V
CHGIN
= 0V
SYS switch closed, 2x buck regulators
in burst mode, 3x LDOs enabled,
I
SYS
= 0A, I
B_OUT
= 0A, I
L_OUT
=0A
0.95
MIN
TYP
0.26
2
mA
MAX
UNITS
GLOBAL SUPPLY CURRENT (L_IN Connected to SYS)
3
µA
3.5
4.6
www.maximintegrated.com
Maxim Integrated │ 3
MAX14690
Wearable Charge-Management Solution
Electrical Characteristics (continued)
(V
CHGIN
= 5.0V, V
BAT
= 3.7V, T
A
= -40°C to +85°C, all registers in their default state, unless otherwise noted. Typical values are at
T
A
= +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
BUCK REGULATOR 1
(V
SYS
= +3.7V, Burst mode operation, L = 2.2µH, C = 10µF, V
B1OUT
= 1.2V)
Input Voltage
Output Voltage
Quiescent Supply Current
V
IN_BUCK1
V
OUT_BUCK1
I
Q_BUCK1
I
PWM1_BUCK1
ACC
BUCK1
V
ERR_BUCK1
V
PPRIPPLE1
I
OUT_BUCK1
I
LEAK_B1OUT
R
ONP_BUCK1
R
ONN_BUCK1
f
BUCK1
D
MAX_BUCK1
I
SHRT_BUCK1
I
BLX_BUCK1
I
D_BUCK1
T
ON_BUCK1
T
SHDN_BUCK1
T
SHDN_HYST_BUCK1
V
B1OUT
= 1.2V
Time from enable to full current capability
8
18
58
150
20
1.1
FPWM mode
1.78
V
OUT
= V
SYS
V
REG
< V
OUT
< V
REG
+ 0.1V
Input voltage = V
SYS
25mV step resolution (Note 3)
Burst mode, I
OUT
= 0mA (Note 4)
FPWM mode, L = 4.7µH (ESR = 0.6Ω,
2MHz RAC = 2.13Ω), I
OUT
= 0mA
I
OUT
= 1mA
(V
OUT_BUCK1
> 1V, C > 50µF)
From I
OUT
= 0 to 200mA
(V
B1OUT
= 1.2V average voltage)
I
OUT
= 10mA, C = 20µF
I
OUT
= 10mA, C = 10µF
200
200
10
0.22
0.18
2
100
1.3
1.62
1
36
350
100
0.4
0.3
2.24
-2.6
-3
-1
25
43
2.7
0.8
0.915
2.5
5.5
1.8
2
3.5
+2.9
V
V
µA
mA
%
%
mV
mA
µA
nA
MHz
%
A
µA
mA
ms
°C
°C
Output Accuracy
Load Regulation
Peak-to-Peak Ripple in
Burst Mode
Maximum Operative Output
Current
B1OUT Pulldown Current
pMOS On-Resistance
nMOS On-Resistance
Oscillator Frequency
Maximum Duty Cycle
Short-Circuit Current Limit
BLX Leakage Current
Active Discharge Current
Full Turn-On Time
Thermal-Shutdown
Temperature
Thermal-Shutdown
Temperature Hysteresis
www.maximintegrated.com
Maxim Integrated │ 4
MAX14690
Wearable Charge-Management Solution
Electrical Characteristics (continued)
(V
CHGIN
= 5.0V, V
BAT
= 3.7V, T
A
= -40°C to +85°C, all registers in their default state, unless otherwise noted. Typical values are at
T
A
= +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
BUCK REGULATOR 2
(V
SYS
= +3.7V, Burst mode operation, L = 2.2µH, C = 10µF, V
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
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