Standard SRAM, 4X4, 40ns, CMOS, CQCC20,
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Rochester Electronics |
| 包装说明 | QCCN, |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A001.A.2.C |
| 最长访问时间 | 40 ns |
| JESD-30 代码 | S-CQCC-N20 |
| JESD-609代码 | e0 |
| 长度 | 8.89 mm |
| 内存密度 | 16 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 4 |
| 功能数量 | 1 |
| 端子数量 | 20 |
| 字数 | 4 words |
| 字数代码 | 4 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 4X4 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QCCN |
| 封装形状 | SQUARE |
| 封装形式 | CHIP CARRIER |
| 并行/串行 | PARALLEL |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 认证状态 | Not Qualified |
| 座面最大高度 | 2.03 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | NO LEAD |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 8.89 mm |
| Base Number Matches | 1 |

| SN54LS170FK | SN54LS170W | SNJ54LS170FK | SN54170J | SN54170W | SNJ54170J | SNJ54170W | |
|---|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 4X4, 40ns, CMOS, CQCC20, | Standard SRAM, 4X4, 40ns, CMOS, CDFP16, | Standard SRAM, 4X4, CMOS, CQCC20 | Standard SRAM, 4X4, 40ns, CMOS, CDIP16, | Standard SRAM, 4X4, 40ns, CMOS, CDFP16, | Standard SRAM, 4X4, CMOS, CDIP16, | Standard SRAM, 4X4, CMOS, CDFP16 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| JESD-30 代码 | S-CQCC-N20 | R-CDFP-F16 | S-CQCC-N20 | R-CDIP-T16 | R-CDFP-F16 | R-CDIP-T16 | R-CDFP-F16 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 8.89 mm | 10.2 mm | 8.89 mm | 19.56 mm | 10.2 mm | 19.56 mm | 10.2 mm |
| 内存密度 | 16 bit | 16 bit | 16 bit | 16 bit | 16 bit | 16 bit | 16 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 20 | 16 | 20 | 16 | 16 | 16 | 16 |
| 字数 | 4 words | 4 words | 4 words | 4 words | 4 words | 4 words | 4 words |
| 字数代码 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 4X4 | 4X4 | 4X4 | 4X4 | 4X4 | 4X4 | 4X4 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QCCN | DFP | QCCN | DIP | DFP | DIP | DFP |
| 封装形状 | SQUARE | RECTANGULAR | SQUARE | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | FLATPACK | CHIP CARRIER | IN-LINE | FLATPACK | IN-LINE | FLATPACK |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 2.03 mm | 2.03 mm | 2.03 mm | 5.08 mm | 2.03 mm | 5.08 mm | 2.03 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | YES | NO | YES | NO | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD | FLAT | NO LEAD | THROUGH-HOLE | FLAT | THROUGH-HOLE | FLAT |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm |
| 端子位置 | QUAD | DUAL | QUAD | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 8.89 mm | 6.73 mm | 8.89 mm | 7.62 mm | 6.73 mm | 7.62 mm | 6.73 mm |
| 包装说明 | QCCN, | DFP, | - | DIP, | DFP, | DIP, | DFP, |
| 最长访问时间 | 40 ns | 40 ns | - | 40 ns | 40 ns | - | - |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - | - |
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