TGA4915-CP
7 W Ka Band Packaged Power Amplifier
Key Features and Performance
•
•
•
•
•
•
•
Frequency Range: 26 - 31 GHz
38 dBm Typical Psat @ Pin =21 dBm
22 dB Nominal Gain
15 dB Typical Return Loss
0.25µm pHEMT Technology
Bias Conditions: Vd = 6V, Idq = 4.2 A
Package Dimensions: 0.526 x 0.650 x 0.073 in
Primary Applications
Product Description
The TriQuint TGA4915-CP is a compact
7 Watt High Power Amplifier for Ka band
applications. The part is designed using
TriQuint’s proven standard 0.25 um gate
Power pHEMT production process.
The TGA4915-CP provides a nominal 38
dBm of output power at an input power
level of 21 dBm with a small signal gain
of 22 dB.
The part is ideally suited for low cost
emerging markets such as base station
transmitters for satellite ground terminals
and point to point radio.
Power (dBm)
•
•
Satellite Ground Terminals
Point to Point
Preliminary Measured Performance
Bias Conditions: Vd=6 V Idq=4.2 A
40
39
38
37
36
35
34
33
32
31
30
24
25
26
27
28
29
30
31
32
Psat
P1dB
Frequency (GHz)
28
24
20
16
12
8
4
0
-4
-8
-12
-16
-20
-24
-28
24
25
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
28
29
30
31
32
33
34
Output
Input
26
27
Frequency (GHz)
Datasheet subject to change without notice.
1
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com
Apr 2009 © Rev A
Return Loss (dB)
Gain (dB)
TGA4915-CP
TABLE I
MAXIMUM RATINGS 1/
Symbol
V
I
+
-
Parameter
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current (Quiescent)
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
Value
8V
-3V TO 0V
8A
124 mA
27 dBm
50 W
200
°C
210
°C
-65 to 150
°C
Notes
V
+
| I
G
|
P
IN
P
D
T
CH
T
M
T
STG
1/
2/
These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and/or affect device
lifetime. These are stress ratings only, and functional operation of the device at these conditions is not
implied.
Junction operating temperature will directly affect the device median lifetime. For maximum life, it is
recommended that junction temperatures be maintained at the lowest possible levels.
2/
.
2
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com
Apr 2009 © Rev A
TGA4915-CP
TABLE III
THERMAL INFORMATION
Parameter
θ
JC
Thermal Resistance
(Channel to Backside of
Package)
θ
JC
Thermal Resistance
(Channel to Backside of
Package)
Test Conditions
V
D
= 6 V
I
D
= 4.2 A
P
DISS
= 25.2 W
Vd = 8 V
Id = 7.1 A @ Psat
P
diss
= 50 W
P
out
= 7 W (RF)
T
CH
(°C)
128
θ
JC
(°C/W)
2.3
T
m
(hours)
7.4 E+6
200
2.3
2.3 E+4
.
Note: Carrier at 85
°C
baseplate temperature. Worst case is at saturated output power
when DC power consumption rises to 57 W with 7 W RF power delivered to the load. Power
dissipated is 50 W and the temperature rise in the channel is 115 °C.
Median Lifetime (Tm) vs. Channel Temperature
1.E+13
1.E+12
Median Lifetime (Hours)
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
25
FET3
50
75
100
125
150
175
200
Channel Temperature (
°
C)
4
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com
Apr 2009 © Rev A
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