VS-SD803C..C Series
www.vishay.com
Vishay Semiconductors
Fast Recovery Diodes
(Hockey PUK Version), 845 A
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
845 A
B-43
Single diode
B-43
PRODUCT SUMMARY
I
F(AV)
Package
Circuit configuration
High power FAST recovery diode series
1.0 μs to 1.5 μs recovery time
High voltage ratings up to 1600 V
High current capability
Optimized turn-on and turn-off characteristics
Low forward recovery
Fast and soft reverse recovery
Press PUK encapsulation
Hockey PUK version case style B-43
Maximum junction temperature 125 °C
Designed and qualified for industrial level
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
t
rr
T
J
TEST CONDITIONS
VS-SD803C..C
S10
845
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
Range
T
J
55
1326
25
11 295
11 830
640
583
400 to 1000
1.0
25
-40 to 125
S15
845
55
1326
25
11 295
11 830
640
583
1200 to 1600
1.5
25
-40 to 125
UNITS
A
°C
A
°C
A
A
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VS-SD803C..S10C
08
10
12
VS-SD803C..S15C
14
16
V
RRM
, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
400
800
1000
1200
1400
1600
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
500
900
1100
1300
1500
1700
45
I
RRM
MAXIMUM
AT T
J
= 125 °C
mA
Revision: 14-Jan-14
Document Number: 93180
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD803C..C Series
www.vishay.com
Vishay Semiconductors
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
No voltage
reapplied
t = 8.3 ms
t = 10 ms
100 % V
RRM
reapplied
t = 8.3 ms
Sinusoidal half wave,
initial T
J
= T
J
maximum
t = 10 ms
No voltage
reapplied
t = 8.3 ms
t = 10 ms
100 % V
RRM
reapplied
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 2655 A, T
J
= T
J
maximum t
p
= 10 ms sinusoidal wave
VALUES
845 (420)
55 (75)
1326
11 295
11 830
9500
9945
640
583
451
412
6400
1.02
1.32
0.38
0.28
1.89
UNITS
A
°C
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive current
I
FSM
A
Maximum I
2
t for fusing
I
2
t
kA
2
s
Maximum I
2
t
for fusing
Low level of threshold voltage
High level of threshold voltage
Low level of forward slope resistance
High level of forward slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
kA
2
s
V
mW
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT T
J
= 25 °C
CODE
t
rr
AT 25 % I
RRM
(μs)
1.0
1.5
TEST CONDITIONS
I
pk
SQUARE
PULSE
(A)
1000
dI/dt
(A/μs)
V
r
(V)
TYPICAL VALUES
AT T
J
= 125 °C
I
FM
t
rr
AT 25 % I
RRM
(μs)
2.0
3.2
Q
rr
(μC)
45
87
I
rr
(A)
34
51
dir
dt
t
rr
t
Q
rr
I
RM(REC)
S10
S15
50
-30
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
case junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
SYMBOL
T
J
T
Stg
R
thJ-hs
TEST CONDITIONS
VALUES
-40 to 125
-40 to 125
0.076
0.038
9800 (1000)
83
B-43
UNITS
°C
K/W
N (kg)
g
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.006
0.008
0.010
0.015
0.026
DOUBLE SIDE
0.007
0.008
0.010
0.015
0.026
RECTANGULAR CONDUCTION
SINGLE SIDE
0.005
0.008
0.011
0.016
0.026
DOUBLE SIDE
0.005
0.008
0.011
0.016
0.026
TEST CONDITIONS
UNITS
T
J
= T
J
maximum
K/W
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 14-Jan-14
Document Number: 93180
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD803C..C Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Heatsink Temperature (°C)
130
120
110
100
90
80
70
60
90°
50
40
0
200
400
600
800 1000 1200 1400
Average Forward Current (A)
30°
60°
120°
180°
DC
Conduction Period
Maximum Allowable Heatsink T
emperature (°C)
130
120
110
100
90
80
70
0
S
D803C..C S
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.076 K/ W
S
D803C..C S
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.038 K/ W
Conduction Angle
30°
60°
90°
180°
120°
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Maximum Allowable Heatsink T
emperature (°C)
120
110
100
S
D803C..C S
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.076 K/ W
Maximum Average Forward Power Loss (W)
130
1600
1400
1200
1000
800
600
400
200
0
0 100 200 300 400 500 600 700 800 900
Average Forward Current (A)
Conduction Angle
180°
120°
90°
60°
30°
RMSLimit
Conduction Period
90
80
70
60
50
0
100
200
300
400
500
600
700
Average Forward Current (A)
30°
60°
90°
120°
180°
DC
S
D803C..C S
eries
T = 125°C
J
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
Maximum Allowable Heatsink T
emperature (°C)
120
110
100
S
D803C..C S
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.038 K/ W
Maximum Average Forward Power Loss (W)
130
2200
2000
1800
1600
1400
1200
1000 RMS Limit
800
600
400
200
0
0
200 400
600
800 1000 1200 1400
Average Forward Current (A)
Conduction Period
DC
180°
120°
90°
60°
30°
Conduc tion Angle
90
80
70
60
50
0 100 200 300 400 500 600 700 800 900
Average Forward Current (A)
30°
60°
90°
120°
180°
S
D803C..C S
eries
T
J
= 125°C
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
Revision: 14-Jan-14
Document Number: 93180
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD803C..C Series
www.vishay.com
Vishay Semiconductors
T
ransient T
hermal Impedance Z
thJ-hs
(K/ W)
0.1
S
D803C..C S
eries
Peak Half S Wave Forward Current (A)
ine
10000
9000
8000
7000
6000
5000
4000
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
0.01
S
teady S
tate Value
R
thJ-hs
= 0.076 K/ W
(S
ingle S
ide Cooled)
R
thJ-hs
= 0.038 K/ W
(Double S Cooled)
ide
(DC Operation)
S
D803C..C S
eries
10
100
0.001
0.001
0.01
0.1
1
10
100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
S
quare Wave Puls Duration (s)
e
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double-Side Cooled
12000
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Maximum Non R
epetitive S
urge Current
Vers Pulse T
us
rain Duration.
11000
Initial T = 125°C
J
10000
No Voltage Reapplied
Rated V
RRM
Reapplied
9000
8000
7000
6000
5000
4000
3000
0.01
S
D803C..C S
eries
0.1
Pulse T
rain Duration (s)
1
Maximum Revers Recovery T
e
ime - T (µs
rr
)
Peak Half S Wave Forward Current (A)
ine
2.2
2.1
2
1.9
S
D803C..S
10C S
eries
T = 125 °C; V r = 30V
J
I
FM
= 1000 A
S
quare Pulse
500 A
1.8
1.7
1.6
10
250 A
100
Rate Of Fall Of Forward Current - di/dt (A/ µs)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double-Side Cooled
10000
Instantaneous Forward Current (A)
Fig. 11 - Recovery Time Characteristics
Maximum Revers Rec overy Charge - Qrr (µC)
e
130
120
110
100
90
80
70
60
50
40
30
S
D803C..S
10C S
eries
T = 125 °C; Vr = 30V
J
250 A
500 A
I
FM
= 1000 A
S
quare Pulse
1000
T = 25°C
J
100
T = 125°C
J
S
D803C..C S
eries
10
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous Forward Voltage (V)
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 12 - Recovery Charge Characteristics
Revision: 14-Jan-14
Document Number: 93180
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD803C..C Series
www.vishay.com
Vishay Semiconductors
Maximum Reverse Recovery Charge - Qrr (µC)
200
180
160
140
500 A
I
FM
= 1000 A
S ua re Pulse
q
Maximum R
everse Recovery Current - Irr (A)
120
110
100
90
80
70
60
50
40
30
20
S
D803C..S
10C S
eries
T = 125 °C; V r = 30V
J
I
FM
= 1000 A
S
quare Pulse
500 A
250 A
120
100
80
60
S
D803C..S
15C S
eries
T = 125 °C; V r = 30V
J
250 A
10
10 20 30 40 50 60 70 80 90 100
40
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 13 - Recovery Current Characteristics
Fig. 15 - Recovery Charge Characteristics
Maximum Reverse Recovery Current - Irr (A)
Maximum R
everse Recovery T
ime - T (µs)
rr
4
S
D803C..S
15C S
eries
T = 125 °C; V r = 30V
J
3.5
I
FM
= 1000 A
S
quare Pulse
140
130
120
110
100
90
80
70
60
50
40
30
S
D803C..S
15C S
eries
T
J
= 125 °C; V r = 30V
250 A
500 A
I
FM
= 1000 A
S
quare Pulse
3
500 A
2.5
250 A
2
10
100
20
10 20 30 40 50 60 70 80 90 100
R
ate Of Fall Of Forward Current - di/d t (A/ µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 14 - Recovery Time Characteristics
Fig. 16 - Recovery Current Characteristics
1E4
10
4
2
20 joules p er pulse
2
1
0.4
0.2
0.1
0.04
4
10
20 joules per pulse
Peak Forward Current (A)
1
0.4
1E3
0.04
0.02
0.2
0.1
1E2
0.01
S
D803C..S
10C S
eries
T
rapezoidal Pulse
T
J
= 125°C, V
RRM
= 800V
d v/ dt = 1000V/ µs; di/ dt=50A/ µs
tp
S
D803C..S
10C S
eries
S
inusoidal Pulse
T
J
= 125°C, V
RRM
= 800V
d v/ d t = 1000V/ µs
tp
1E1
1E1
1E2
1E3
1E
4
1E1
1E2
1E3
1E
4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
Revision: 14-Jan-14
Document Number: 93180
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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