PD - 95645B
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free.
G
IRGB8B60KPbF
IRGS8B60KPbF
IRGSL8B60KPbF
C
V
CES
= 600V
I
C
= 19A
t
sc
>10µs, T
J
=175°C
E
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel
V
CE(on)
typ. = 1.8V
TO-220AB
D
2
Pak
TO-262
IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
NOMINAL
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Max.
600
28
19
8.0
Units
V
A
c
34
34
±20
167
83
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
V
W
Gate-to-Emitter Voltage
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Storage Temperature Range, for 10 sec.
P
D
@ T
C
= 100°C Maximum Power Dissipation
Thermal / Mechanical Characteristics
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case- IGBT
g
Min.
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
0.90
–––
62
40
–––
Units
°C/W
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
d
–––
Junction-to-Ambient (PCB Mount, Steady State)
e
–––
–––
–––
g
www.irf.com
1
01/25/2010
IRGB/S/SL8B60KPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
V
CE(on)
Min. Typ. Max. Units
—
0.57
1.8
2.2
2.3
4.5
-9.5
3.7
1.0
200
800
—
—
—
2.2
2.5
2.6
5.5
—
—
150
500
1320
±100
nA
µA
S
V
Conditions
V
GE
= 0V, I
C
= 500µA
Ref.Fig.
Collector-to-Emitter Breakdown Voltage
600
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
—
Collector-to-Emitter Voltage
—
—
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
I
C
= 8.0A, V
GE
= 15V, T
J
= 25°C
V
I
C
= 8.0A, V
GE
= 15V, T
J
= 150°C
I
C
= 8.0A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 250µA
mV/°C V
CE
= V
GE
, I
C
= 1mA (25°C-125°C)
V
CE
= 50V, I
C
= 8.0A, PW = 80µs
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
GE
= ±20V
5,6,7
8,9,10
V
GE(th)
∆V
GE(th)
/∆T
J
gfe
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
3.5
—
—
—
—
—
8,9,10,
11
I
GES
Gate-to-Emitter Leakage Current
—
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
29
3.7
14
160
160
320
23
22
140
32
220
270
490
22
21
180
40
440
38
16
—
—
—
268
268
433
27
26
150
42
330
381
608
27
25
198
56
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
ns
µJ
ns
µJ
I
C
= 8.0A
nC V
CC
= 480V
V
GE
= 15V
Conditions
Ref.Fig.
17
CT1
I
C
= 8.0A, V
CC
= 400V
V
GE
= 15V, R
G
= 50Ω, L = 1.1mH
T
J
= 25°C
I
C
= 8.0A, V
CC
= 400V
V
GE
= 15V, R
G
= 50Ω, L = 1.1mH
T
J
= 25°C
I
C
= 8.0A, V
CC
= 400V
V
GE
= 15V, R
G
= 50Ω, L = 1.1mH
T
J
= 150°C
I
C
= 8.0A, V
CC
= 400V
V
GE
= 15V, R
G
= 50Ω, L = 1.1mH
T
J
= 150°C
CT4
f
CT4
CT4
12,14
WF1,WF2
13,15
CT4
WF1
WF2
f
16
FULL SQUARE
T
J
= 150°C, I
C
= 34A, Vp = 600V
V
CC
=500V,V
GE
= +15V to 0V,R
G
= 50Ω
T
J
= 150°C, Vp = 600V, R
G
= 100Ω
4
CT2
CT3
WF3
SCSOA
Short Circuit Safe Operating Area
10
—
—
µs
V
CC
=360V,V
GE
= +15V to 0V
Notes
to
are on page 13.
2
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