2N3906
Preferred Device
General Purpose
Transistors
PNP Silicon
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Features
•
Pb−Free Packages are Available*
2
BASE
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 60°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
P
D
T
J
, T
stg
Value
40
40
5.0
200
625
5.0
250
1.5
12
−55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
mW
W
mW/°C
°C
3
STRAIGHT LEAD
BULK PACK
12
TO−92
CASE 29
STYLE 1
1
1
EMITTER
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
THERMAL CHARACTERISTICS
(Note 1)
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
2N
3906
ALYWG
G
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates Data in addition to JEDEC Requirements.
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
1
March, 2007 − Rev. 3
Publication Order Number:
2N3906/D
2N3906
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
h
FE
60
80
100
60
30
−
−
0.65
−
−
−
300
−
−
0.25
0.4
0.85
0.95
−
(I
C
= 1.0 mAdc, I
B
= 0)
(I
C
= 10
mAdc,
I
E
= 0)
(I
E
= 10
mAdc,
I
C
= 0)
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
40
40
5.0
−
−
−
−
−
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
Symbol
Min
Max
Unit
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small−Signal Current Gain
Output Admittance
Noise Figure
V
CE(sat)
V
BE(sat)
Vdc
Vdc
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
NF
250
−
−
2.0
0.1
100
3.0
−
−
4.5
10
12
10
400
60
4.0
MHz
pF
pF
kW
X 10
− 4
−
mmhos
dB
(I
C
= 100
mAdc,
V
CE
= 5.0 Vdc, R
S
= 1.0 kW, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 3.0 Vdc, V
BE
= 0.5 Vdc,
I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc, I
B1
= I
B2
= 1.0 mAdc)
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc, I
B1
= I
B2
= 1.0 mAdc)
t
d
t
r
t
s
t
f
−
−
−
−
35
35
225
75
ns
ns
ns
ns
2. Pulse Test: Pulse Width
v
300
ms;
Duty Cycle
v
2%.
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2
2N3906
ORDERING INFORMATION
Device
2N3906
2N3906G
2N3906RL1
2N3906RL1G
2N3906RLRA
2N3906RLRAG
2N3906RLRM
2N3906RLRMG
2N3906RLRP
2N3906RLRPG
Package
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
Shipping
†
5000 Units / Bulk
5000 Units / Bulk
5000 Units / Bulk
5000 Units / Bulk
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Ammo Pack
2000 / Ammo Pack
2000 / Tape & Reel
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3V
275
< 1 ns
+0.5 V
10 k
C
S
< 4 pF*
10.6 V
300 ns
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time Equivalent Test Circuit
3V
+9.1 V
< 1 ns
275
10 k
0
1N916
10 < t
1
< 500
ms
DUTY CYCLE = 2%
t
1
10.9 V
C
S
< 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 2. Storage and Fall Time Equivalent Test Circuit
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3
2N3906
TYPICAL TRANSIENT CHARACTERISTICS
T
J
= 25°C
T
J
= 125°C
10
7.0
CAPACITANCE (pF)
Q, CHARGE (pC)
5.0
C
obo
C
ibo
3.0
2.0
5000
3000
2000
1000
700
500
300
200
100
70
50
V
CC
= 40 V
I
C
/I
B
= 10
Q
T
Q
A
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20 30 50 70 100
I
C
, COLLECTOR CURRENT (mA)
200
Figure 3. Capacitance
Figure 4. Charge Data
500
300
200
100
70
50
30
20
10
7
5
I
C
/I
B
= 10
500
300
200
I
C
/I
B
= 20
t f , FALL TIME (ns)
100
70
50
30
20
10
7
5
I
C
/I
B
= 10
V
CC
= 40 V
I
B1
= I
B2
TIME (ns)
t
r
@ V
CC
= 3.0 V
15 V
40 V
2.0 V
t
d
@ V
OB
= 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time
Figure 6. Fall Time
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4
2N3906
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= − 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
5.0
SOURCE RESISTANCE = 200
W
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
I
C
= 0.5 mA
SOURCE RESISTANCE = 2.0 k
I
C
= 50
mA
12
f = 1.0 kHz
10
I
C
= 0.5 mA
8
6
4
2
0
I
C
= 50
mA
I
C
= 100
mA
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
4.0
3.0
2.0
SOURCE RESISTANCE = 2.0 k
I
C
= 100
mA
0.2
0.4
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
40
100
1.0
0
0.1
0.1
0.2
0.4
1.0 2.0
4.0
10
20
R
g
, SOURCE RESISTANCE (k OHMS)
40
100
Figure 7.
Figure 8.
h PARAMETERS
(V
CE
= − 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
300
hoe , OUTPUT ADMITTANCE (
m
mhos)
5.0 7.0 10
100
70
50
30
20
h fe , DC CURRENT GAIN
200
100
70
50
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 9. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10
−4
)
20
h ie , INPUT IMPEDANCE (k OHMS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
10
7.0
5.0
3.0
2.0
Figure 10. Output Admittance
1.0
0.7
0.5
0.1
0.2
2.0 3.0
0.3
0.5 0.7 1.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
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