Freescale Semiconductor
Technical Data
Document Number: MRF8P9040N
Rev. 1, 10/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA, W--CDMA and LTE base station applications with
frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
Driver Application — 900 MHz
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
320 mA, P
out
= 4.0 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
18.9
19.1
19.1
η
D
(%)
18.9
19.5
19.9
ACPR
(dBc)
--49.6
--50.1
--48.8
MRF8P9040NR1
MRF8P9040GNR1
MRF8P9040NBR1
728-
-960 MHz, 4.0 W AVG., 28 V
CDMA, W-
-CDMA, LTE
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 63 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
), Designed for
Enhanced Ruggedness
•
Typical P
out
@ 1 dB Compression Point
≃
42 Watts CW
Driver Application — 700 MHz
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
320 mA, P
out
= 4.0 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
728 MHz
748 MHz
768 MHz
G
ps
(dB)
19.9
20.1
20.0
η
D
(%)
18.7
19.1
19.5
ACPR
(dBc)
--49.9
--50.0
--49.9
CASE 1486-
-03, STYLE 1
TO-
-270 WB-
-4
PLASTIC
MRF8P9040NR1
CASE 1487-
-05, STYLE 1
TO-
-270 WB- GULL
-4
PLASTIC
MRF8P9040GNR1
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
Optimized for Doherty Applications
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
CASE 1484-
-04, STYLE 1
TO-
-272 WB-
-4
PLASTIC
MRF8P9040NBR1
RF
inA
/V
GSA
3
2 RF
outA
/V
DSA
RF
inB
/V
GSB
4
1 RF
outB
/V
DSB
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
©
Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
--0.5, +70
--6.0, +10
32, +0
--65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
(4)
Case Temperature 77°C, 4.0 W CW, 28 Vdc, I
DQ
= 320 mA, 960 MHz
Case Temperature 81°C, 40 W CW, 28 Vdc, I
DQ
= 320 mA, 960 MHz
Symbol
R
θJC
Value
(2,3)
1.5
1.3
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 70 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
(4)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 170
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 320 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 0.55 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.5
2.3
0.1
2.3
3.1
0.17
3.0
3.8
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Measurement made with device in single--ended configuration. (See Figure 3, Possible Circuit Topologies)
(continued)
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(1,2,3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 320 mA, P
out
= 4.0 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
ACPR
IRL
17.5
18.0
—
—
19.1
19.9
--48.8
--13
20.5
—
--46.0
--9
dB
%
dBc
dB
Typical Broadband Performance
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 320 mA, P
out
= 4.0 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Frequency
920 MHz
940 MHz
960 MHz
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 45 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 4.0 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
G
ps
(dB)
18.9
19.1
19.1
Symbol
P1dB
IMD
sym
Min
—
—
η
D
(%)
18.9
19.5
19.9
Typ
42
22
ACPR
(dBc)
--49.6
--50.1
--48.8
Max
—
—
IRL
(dB)
--12
--13
--13
Unit
W
MHz
Typical Performances
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 320 mA, 920--960 MHz Bandwidth
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
70
0.2
0.016
0.001
—
—
—
—
MHz
dB
dB/°C
dB/°C
Typical Broadband Performance — 700 MHz
(1)
(In Freescale 700 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 320 mA,
P
out
= 4.0 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
728 MHz
748 MHz
768 MHz
G
ps
(dB)
19.9
20.1
20.0
η
D
(%)
18.7
19.1
19.5
ACPR
(dBc)
--49.9
--50.0
--49.9
IRL
(dB)
--14
--15
--12
1. Measurement made with device in single--ended configuration. (See Figure 3, Possible Circuit Topologies)
2. Part internally input matched.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
3
C3
C4
C5
C6
B1
C12
C1
C2
CUT OUT AREA
C9
C10
C11
MRF8P9040N/NB
Rev 1
C7
C8
Figure 2. MRF8P9040NR1(GNR1)(NBR1) Test Circuit Component Layout
Table 6. MRF8P9040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
B1
C1, C4, C5, C7, C11
C2
C3
C6, C8
C9
C10
C12
PCB
Description
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2.0 pF Chip Capacitor
220
μF,
63 V Electrolytic Capacitor
0.030″,
ε
r
= 3.5
Part Number
MPZ2012S300AT000
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Rogers
Manufacturer
TDK
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
4
RF Device Data
Freescale Semiconductor
Single--ended
λ
λ
4
4
Quadrature combined
λ
4
Doherty
λ
2
λ
2
Push--pull
Figure 3.
Possible Circuit Topologies
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
5
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