Freescale Semiconductor
Technical Data
Document Number: MRF8S19140H
Rev. 0, 5/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA, W--CDMA and LTE base station applications with
frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1100 mA, P
out
= 34 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
1930 MHz
1960 MHz
1990 MHz
G
ps
(dB)
18.8
19.1
19.3
η
D
(%)
31.7
31.4
31.5
Output PAR
(dB)
6.4
6.5
6.5
ACPR
(dBc)
--38.5
--38.8
--38.8
MRF8S19140HR3
MRF8S19140HSR3
1930-
-1990 MHz, 34 W AVG., 28 V
CDMA, W-
-CDMA, LTE
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 191 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 1 dB Compression Point
≃
138 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
Optimized for Doherty Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CASE 465-
-06, STYLE 1
NI-
-780
MRF8S19140HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF8S19140HSR3
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 75°C, 34 W CW, 28 Vdc, I
DQ
= 1100 mA, 1960 MHz
Case Temperature 80°C, 140 W CW, 28 Vdc, I
DQ
= 1100 mA, 1960 MHz
Symbol
R
θJC
Value
(2,3)
0.48
0.45
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.Go
to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8S19140HR3 MRF8S19140HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1100 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.0
1.9
0.1
1.8
2.6
0.24
2.5
3.4
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1100 mA, P
out
= 34 W Avg., f = 1960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
18.0
30.0
5.9
—
—
19.1
31.4
6.5
--38.8
--24
21.0
—
—
--37.5
--7
dB
%
dB
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1100 mA, P
out
= 34 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Frequency
1930 MHz
1960 MHz
1990 MHz
1. Part internally matched both on input and output.
(continued)
G
ps
(dB)
18.8
19.1
19.3
η
D
(%)
31.7
31.4
31.5
Output PAR
(dB)
6.4
6.5
6.5
ACPR
(dBc)
--38.5
--38.8
--38.8
IRL
(dB)
--24
--24
--15
MRF8S19140HR3 MRF8S19140HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 55 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 34 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
138
15
Max
—
—
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1100 mA, 1930--1990 MHz Bandwidth
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
68
0.5
0.017
0.010
—
—
—
—
MHz
dB
dB/°C
dBm/°C
MRF8S19140HR3 MRF8S19140HSR3
RF Device Data
Freescale Semiconductor
3
C10
C15*
C16*
C4
C17*
C18*
C11
C12
R2
C14
C8
C2
C7
R1
C1
CUT OUT AREA
C6
C13
C5
C9
MRF8S19140
Rev. 4
C3
*Stacked
Figure 1. MRF8S19140HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S19140HR3(HSR3) Test Circuit Component Designations and Values
Part
C1, C2, C3, C4, C5, C6
C7, C8, C9
C10, C11
C12
C13
C14
C15, C17
C16, C18
R1
R2
PCB
Description
10 pF Chip Capacitors
0.8 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
330
μF,
63 V Electrolytic Capacitor
6.8
μF,
50 V Chip Capacitor
47
μF,
16 V Tantalum Capacitor
.01
μF,
100 V Chip Capacitors
.56
μF,
50 V Chip Capacitors
5.1
Ω,
1/8 W Chip Resistor
4.75
Ω,
1/4 W Chip Resistor
0.030″,
ε
r
= 2.55
Part Number
ATC100B110JT500XT
ATC800B0R8BT500XT
GRM55DR61H106KA88L
MCRH63V337M13X21--RH
C4532X7R1H685KT
T491D476K016AT
C1825C103K1GACTU
C1825C564J5RACTU
CRCW08055R10JNEA
CRCW12064R75FNEA
AD255A
Manufacturer
ATC
ATC
Murata
Multicomp
TDK
Kemet
Kemet
Kemet
Vishay
Vishay
Arlon
MRF8S19140HR3 MRF8S19140HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
V
DD
= 28 Vdc, P
out
= 34 W (Avg.)
I
DQ
= 1100 mA
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
PARC
IRL
ACPR
1900
1920
1940
1960
1980
2000
2020
f, FREQUENCY (MHz)
η
D
, DRAIN
EFFICIENCY (%)
20
19.8
19.6
G
ps
, POWER GAIN (dB)
19.4
19.2
19
18.8
18.6
18.4
18.2
18
1880
η
D
G
ps
36
34
32
30
28
--34
--35
ACPR (dBc)
--36
--37
--38
--39
2040
IRL, INPUT RETURN LOSS (dB)
0
--7
--14
--21
--28
--35
0
--0.5
--1
--1.5
--2
--2.5
PARC (dB)
Figure 2. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 34 Watts Avg.
--10
--20
--30
--40
--50
--60
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, P
out
= 55 W (PEP), I
DQ
= 1100 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
IM3--U
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
1
10
TWO--TONE SPACING (MHz)
100
Figure 3. Intermodulation Distortion Products
versus Two-
-Tone Spacing
20
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
19
G
ps
, POWER GAIN (dB)
18
17
16
15
14
1
0
--1
--2
ACPR
--3
--4
--5
--2 dB = 45 W
--3 dB = 61 W
G
ps
57
η
D
,
DRAIN EFFICIENCY (%)
51
45
39
33
27
PARC
80
100
120
21
--50
--20
--25
--30
--35
--40
--45
ACPR (dBc)
V
DD
= 28 Vdc, I
DQ
= 1100 mA, f = 1960 MHz, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
--1 dB = 33 W
η
D
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
20
40
60
P
out
, OUTPUT POWER (WATTS)
Figure 4. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8S19140HR3 MRF8S19140HSR3
RF Device Data
Freescale Semiconductor
5
能源基础设施
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