MD1803DFX
High voltage NPN Power transistor for standard definition CRT
display
Features
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State-of-the-art technology:
– Diffused collector “enhanced generation”
More stable performance versus operating
temperature variation
Low base drive requirement
Tighter h
FE
range at operating collector current
Fully insulated power package U.L. compliant
Integrated free wheeling diode
In compliance with the 2002/93/EC european
directive
1
3
2
ISOWATT218FX
Applications
■
Internal schematic diagram
Horizontal deflection output for TV
Description
The MD1803DFX is manufactured using Diffused
Collector in Planar Technology adopting new and
enhanced high voltage structure. The new MD
product series show improved silicon efficiency
bringing updated performance to the Horizontal
Deflection stage.
R
BE
=60Ω typ.
Order codes
Part number
MD1803DFX
Marking
MD1803DFX
Package
ISOWATT218FX
Packing
TUBE
September 2006
Rev 6
1/10
www.st.com
10
Electrical ratings
MD1803DFX
1
Table 1.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
P
TOT
V
isol
T
stg
T
J
Electrical ratings
Absolute maximum rating
Parameter
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5ms)
Base current
Total dissipation at T
c
= 25°C
Insulation withstand voltage (rms) from all three leads to external
heatsink
Storage temperature
Max. operating junction temperature
Value
1500
700
10
10
15
5
57
2500
-65 to 150
150
Unit
V
V
V
A
A
A
W
V
°C
Table 2.
Symbol
R
thj-case
Thermal data
Parameter
Thermal resistance junction-case
____________________Max
Value
2.2
Unit
°C/W
2/10
MD1803DFX
Electrical characteristics
2
Electrical characteristics
(T
CASE
= 25°C;
unless otherwise specified)
Table 3.
Symbol
I
CES
I
EBO
V
(BR)EBO
V
CE(sat)
Note 1
V
BE(sat)
Note 1
h
FE
Note 1
V
f
t
s
t
f
Electrical characteristics
Parameter
Collector cut-off current
(V
BE
= 0)
Emitter cut-off current
(I
C
= 0)
Test conditions
V
CE
= 1500V
V
CE
= 1500V
V
EB
= 5V
T
c
= 125°C
40
10
I
B
= 1.25 A
I
B
= 1.25 A
V
CE
= 5 V
V
CE
= 1 V
V
CE
= 5 V
5.5
18
5
7.5
1.6
f
h
= 16KHz
V
BE(off)
= -2.7V
2.5
0.3
3
0.6
µs
µs
V
2
1.2
Min.
Typ.
Max.
0.2
2
120
Unit
mA
mA
mA
V
V
V
Emitter-base breakdown voltage
I
E
= 700 mA
(I
C
= 0)
Collector-emitter saturation
voltage
Base-emitter saturation voltage
I
C
= 5 A
I
C
= 5 A
I
C
= 1 A
DC current gain
I
C
= 5 A
I
C
= 5 A
Diode forward voltage
Inductive load
Storage time
Fall time
I
F
= 5 A
I
C
= 4A
___ _ _
I
B(on)
= 0.6A__
L
BB(off)
= 4.5µH
1
Pulsed duration = 300
µs,
duty cycle
≤
1.5%.
3/10
Electrical characteristics
MD1803DFX
2.1
Electrical characteristics (curve)
Safe operating area
Figure 2.
Derating curve
Figure 1.
Figure 3.
Output characteristics
Figure 4.
Reverse biased SOA
Figure 5.
DC current gain
Figure 6.
DC current gain
4/10
MD1803DFX
Figure 7.
Collector-emitter saturation voltage Figure 8.
Electrical characteristics
Base-emitter saturation voltage
Figure 9.
Power losses
Figure 10. Inductive load switching time
5/10
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