电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MJE3055TG

产品描述MOSFET N-CHANNEL 60V 200mA
产品类别分立半导体    晶体管   
文件大小58KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 全文预览

MJE3055TG在线购买

供应商 器件名称 价格 最低购买 库存  
MJE3055TG - - 点击查看 点击购买

MJE3055TG概述

MOSFET N-CHANNEL 60V 200mA

MJE3055TG规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
零件包装代码TO-220AB
包装说明FLANGE MOUNT, R-PSFM-T3
针数3
制造商包装代码221A-09
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time1 week
外壳连接COLLECTOR
最大集电极电流 (IC)10 A
集电极-发射极最大电压60 V
配置SINGLE
最小直流电流增益 (hFE)5
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
JESD-609代码e3
元件数量1
端子数量3
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)260
极性/信道类型NPN
最大功率耗散 (Abs)75 W
认证状态Not Qualified
表面贴装NO
端子面层Matte Tin (Sn) - annealed
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间40
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)2 MHz
Base Number Matches1

文档预览

下载PDF文档
MJE2955T (PNP),
MJE3055T (NPN)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
www.onsemi.com
High Current Gain − Bandwidth Product
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
(Note 1)
T
J
, T
stg
Value
60
70
5.0
10
6.0
75
0.6
−55 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 VOLTS − 75 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
1
BASE
EMITTER 3
4
W
W/°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and
must be observed.
TO−220
CASE 221A−09
STYLE 1
1
2
3
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
1.67
Unit
°C/W
MJExx55T = Device Code
xx = 29 or 30
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MARKING DIAGRAM
MJExx55TG
AY WW
ORDERING INFORMATION
Device
MJE2955TG
MJE3055TG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
©
Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 12
Publication Order Number:
MJE2955T/D

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2380  1869  2591  2877  2356  39  34  6  50  16 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved