IRFH7934PbF
Applications
l
l
HEXFET
®
Power MOSFET
Control MOSFET of Sync-Buck Converters
used for Notebook Processor Power
Control MOSFET for Isolated DC-DC
Converters in Networking Systems
V
DSS
30V
R
DS(on)
max
Qg
3.5m @V
GS
= 10V 20nC
:
Benefits
l
l
l
l
l
l
l
l
Very low R
DS(ON)
at 4.5V V
GS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
100% Tested for R
G
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
Large Source Lead for more reliable Soldering
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
PQFN 5X6 mm
Base part number
IRFH7934PBF
Orderable part number
IRFH7934TRPBF
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
g
Power Dissipation
g
Max.
30
± 20
24
19
76
190
3.1
2.0
0.025
-55 to + 150
Units
V
A
c
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
Storage Temperature Range
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
f
Typ.
–––
–––
Max.
2.9
40
Units
°C/W
Junction-to-Ambient
g
Notes
through
are on page 10
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© 2013 International Rectifier
1
August 20, 2013
IRFH7934PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.021
2.9
4.2
1.8
-6.5
–––
–––
–––
–––
–––
20
4.8
2.5
6.3
6.4
8.8
15
1.7
12
16
14
7.5
3100
623
241
–––
–––
3.5
5.1
2.35
–––
1.0
150
100
-100
–––
30
–––
–––
–––
–––
–––
–––
3.1
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
ns
nC
Ω
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 19A
V
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 24A
V
GS
= 4.5V, I
D
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
mV/°C
μA
nA
S
e
= 19A
e
V
DS
= V
GS
, I
D
= 50μA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 19A
See Fig.17 & 18
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 19A
R
G
=1.8Ω
See Fig.15
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
97
19
Units
mJ
A
Avalanche Characteristics
E
AS
I
AR
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
20
28
3.9
A
190
1.0
30
42
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 19A, V
GS
= 0V
di/dt = 325A/μs
e
T
J
= 25°C, I
F
= 19A, V
DD
= 15V
eÃ
See Fig.16
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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© 2013 International Rectifier
August 20, 2013
IRFH7934PbF
2
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
TOP
100
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
10
10
2.7V
2.7V
1
0.1
1
≤
60μs PULSE WIDTH
Tj = 25°C
10
100
≤
60μs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 24A
100
VGS = 10V
1.5
TJ = 150°C
10
1
TJ = 25°C
1.0
0.1
VDS = 15V
≤
60μs PULSE WIDTH
0.01
1.0
2.0
3.0
4.0
5.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
3
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© 2013 International Rectifier
Fig 4.
Normalized On-Resistance
vs. Temperature
August 20, 2013
IRFH7934PbF
100000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
14
12
10
8
6
4
2
0
ID= 19A
VDS= 24V
VDS= 15V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
100
0
10
20
30
40
50
60
70
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
100μsec
10
DC
1
1msec
ISD, Reverse Drain Current (A)
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
TA = 25°C
Tj = 150°C
Single Pulse
0.1
1
10msec
0.1
10
100
VDS , Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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© 2013 International Rectifier
Fig 8.
Maximum Safe Operating Area
August 20, 2013
IRFH7934PbF
4
25
20
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
2.0
15
ID = 50μA
1.6
10
5
1.2
0
25
50
75
100
125
150
0.8
-75
-50
-25
0
25
50
75
100
125
150
TJ , Ambient Temperature (°C)
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Threshold Voltage vs. Temperature
100
D = 0.50
Thermal Response ( ZthJC )
10
1
0.20
0.10
0.05
0.02
0.01
R
1
R
1
τ
J
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
R
4
R
4
τ
C
τ
0.1
τ
1
τ
2
τ
3
τ
3
τ
4
τ
4
Ci=
τi/Ri
Ci i/Ri
Ri (°C/W)
τι
(sec)
6.955975 0.065034
15.08336 5.307554
1.818966 0.00141
16.08526 0.757022
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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© 2013 International Rectifier
August 20, 2013
stm32/stm8
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