VS-3EJH02-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 3 A FRED Pt
®
eSMP
®
Series
SlimSMA
(DO-221AC)
FEATURES
• Hyperfast recovery time, reduced Q
rr
, and soft
recovery
• 175 °C maximum operating junction temperature
• Low forward voltage drop
• Low leakage current
• Specific for output and snubber operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Cathode
Anode
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
T
J
max.
Package
Circuit configuration
3A
200 V
0.74 V
30 ns
175 °C
SlimSMA (DO-221AC)
Single
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, as high frequency rectifiers and freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 145 °C
T
J
= 25 °C
(1)
TEST CONDITIONS
VALUES
200
3
85
-65 to +175
UNITS
V
A
°C
Note
(1)
Device on PCB with 8 mm x 16 mm soldering lands
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
SYMBOL
V
BR
, V
R
V
F
I
R
C
T
TEST CONDITIONS
I
R
= 100 μA
I
F
= 3 A
I
F
= 3 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 200 V
MIN.
200
-
-
-
-
-
TYP.
-
0.86
0.74
-
1
13
MAX.
-
0.93
0.78
2
8
-
μA
pF
V
UNITS
Revision: 12-Dec-17
Document Number: 94879
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-3EJH02-M3
www.vishay.com
Vishay Semiconductors
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 3 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
-
TYP.
26
-
18
26
2.5
4
23
50
MAX.
-
30
-
-
-
-
-
-
A
nC
ns
UNITS
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
t
rr
Peak recovery current
Reverse recovery charge
I
RRM
Q
rr
THERMAL - MECHANICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Maximum junction and
storage temperature range
Thermal resistance,
junction to lead
Thermal resistance,
junction to ambient
Approximate Weight
Marking device
Case style SlimSMA (DO-221AC)
SYMBOL
T
J
, T
Stg
R
thJL
R
thJA
Device mounted on PCB with
8 mm x 16 mm soldering lands
Device mounted on PCB with
2 mm x 3.5 mm soldering lands
TEST CONDITIONS
MIN.
-65
-
-
TYP.
-
8
91
0.032
0.0011
3H2
MAX.
175
10
°C/W
110
g
oz.
UNITS
°C
I
F
- Instantaneous Forward Current (A)
100
100
10
1
T
J
= 125 °C
0.1
0.01
0.001
0.0001
0.3
0.6
0.9
1.2
1.5
T
J
= 175 °C
T
J
= 150 °C
10
T
J
= 175 °C
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
I
R
- Reverse Current (μA)
T
J
= 25 °C
0.1
0
50
100
150
200
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current
vs. Reverse Voltage
Revision: 12-Dec-17
Document Number: 94879
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-3EJH02-M3
www.vishay.com
Vishay Semiconductors
3.5
RMS limit
3
2.5
2
1.5
1
0.5
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
100
C
T
- Junction Capacitance (pF)
10
1
0
50
100
150
200
Average Power Loss (W)
0
0.6
1.2
1.8
2.4
3
3.6
4.2
4.8
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
180
35
30
25
Allowable Case Temperature (°C)
175
170
165
t
rr
(ns)
125 °C
20
15
10
25 °C
160
DC
155
150
145
See
note
(1)
140
0
0.5
1
1.5
2
2.5
3
3.5
Square
wave (D = 0.50)
80 % rated V
R
applied
5
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
70
60
50
dI
F
/dt (A/μs)
Fig. 6 - Typical Reverse Recovery vs. dI
F
/dt
125 °C
Q
rr
(nC)
40
25 °C
30
20
10
100
1000
dI
F
/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see Fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
Revision: 12-Dec-17
Document Number: 94879
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-3EJH02-M3
www.vishay.com
Vishay Semiconductors
10
Z
thJL
- Thermal Impedance
Junction to Lead (°C/W)
1
Z
thJL
0.1
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 8 - Typical Thermal Impedance Z
thJL
Junction-to-Lead
100
Z
thJA
- Thermal Impedance
Junction to Ambient (°C/W)
Z
thJA
10
1
0.001
0.01
0.1
1
10
100
t
1
- Rectangular Pulse Duration (s)
Fig. 9 - Typical Thermal Impedance Z
thJA
Junction-to-Ambient
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 12-Dec-17
Document Number: 94879
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-3EJH02-M3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
-
-
-
3
2
E
3
J
4
H
5
02
6
-M3
7
Vishay Semiconductors product
Current rating (3 = 3 A)
Circuit configuration:
E = single diode
-
-
-
-
J = SlimSMA package
Process type,
H = hyperfast recovery
Voltage code (02 = 200 V)
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-3EJH02-M3/6A
VS-3EJH02-M3/6B
QUANTITY PER REEL
3500
14 000
MINIMUM ORDER QUANTITY
3500
14 000
PACKAGING DESCRIPTION
7"diameter plastic tape and reel
13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95571
www.vishay.com/doc?95562
www.vishay.com/doc?88869
Revision: 12-Dec-17
Document Number: 94879
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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