DRAM 512M (16Mx32) 133MHz SDRAM, 3.3v
参数名称 | 属性值 |
产品种类 Product Category | DRAM |
制造商 Manufacturer | ISSI(芯成半导体) |
RoHS | Details |
类型 Type | SDRAM |
Data Bus Width | 32 bit |
Organization | 16 M x 32 |
封装 / 箱体 Package / Case | TSOP-86 |
Memory Size | 512 Mbit |
Maximum Clock Frequency | 133 MHz |
Access Time | 5.5 ns |
电源电压-最大 Supply Voltage - Max | 3.6 V |
电源电压-最小 Supply Voltage - Min | 3 V |
Supply Current - Max | 180 mA |
最小工作温度 Minimum Operating Temperature | 0 C |
最大工作温度 Maximum Operating Temperature | + 70 C |
系列 Packaging | Tray |
高度 Height | 1.05 mm |
长度 Length | 22.42 mm |
Moisture Sensitive | Yes |
安装风格 Mounting Style | SMD/SMT |
工作电源电压 Operating Supply Voltage | 3.3 V |
工厂包装数量 Factory Pack Quantity | 144 |
宽度 Width | 10.29 mm |
IS42S32160B-75TL | IS42S32160B-75BLI | |
---|---|---|
描述 | DRAM 512M (16Mx32) 133MHz SDRAM, 3.3v | DRAM 512M (16Mx32) 133MHz SDRAM, 3.3v |
产品种类 Product Category |
DRAM | DRAM |
制造商 Manufacturer |
ISSI(芯成半导体) | ISSI(芯成半导体) |
RoHS | Details | Details |
类型 Type |
SDRAM | SDRAM |
Data Bus Width | 32 bit | 32 bit |
Organization | 16 M x 32 | 16 M x 32 |
封装 / 箱体 Package / Case |
TSOP-86 | BGA-90 |
Memory Size | 512 Mbit | 512 Mbit |
Maximum Clock Frequency | 133 MHz | 133 MHz |
Access Time | 5.5 ns | 5.5 ns |
电源电压-最大 Supply Voltage - Max |
3.6 V | 3.6 V |
电源电压-最小 Supply Voltage - Min |
3 V | 3 V |
Supply Current - Max | 180 mA | 180 mA |
最小工作温度 Minimum Operating Temperature |
0 C | - 40 C |
最大工作温度 Maximum Operating Temperature |
+ 70 C | + 85 C |
系列 Packaging |
Tray | Tray |
高度 Height |
1.05 mm | 0.89 mm |
长度 Length |
22.42 mm | 13 mm |
Moisture Sensitive | Yes | Yes |
安装风格 Mounting Style |
SMD/SMT | SMD/SMT |
工作电源电压 Operating Supply Voltage |
3.3 V | 3.3 V |
工厂包装数量 Factory Pack Quantity |
144 | 144 |
宽度 Width |
10.29 mm | 11 mm |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved