PD - 96979F
IRF6678
DirectFET Power MOSFET
l
l
l
l
l
l
l
l
l
RoHS compliant containing no lead or bormide
V
DSS
V
GS
R
DS(on)
R
DS(on)
Low Profile (<0.7 mm)
30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V
Dual Sided Cooling Compatible
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
Ultra Low Package Inductance
43nC
15nC
4.0nC
46nC
28nC
1.8V
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for for SyncFET Socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with Existing Surface Mount Techniques
MX
DirectFET ISOMETRIC
Typical values (unless otherwise specified)
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6678 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET
TM
packaging to achieve the lowest
on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6678 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6678 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
bus converters including R
DS(on)
and gate charge to minimize losses in the SyncFET socket.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
20
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
e
h
h
k
Ãe
f
VGS, Gate-to-Source Voltage (V)
30
±20
30
24
150
240
210
24
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
10
20
30
40
50
ID= 23A
VDS= 24V
VDS= 15V
A
mJ
A
ID = 29A
15
10
5
0
0
1
2
T J = 25°C
3
4
5
6
7
8
9
10
T J = 125°C
60
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.75mH, R
G
= 25Ω, I
AS
= 23A.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
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1
02/28/06
IRF6678
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
24
1.7
2.3
–––
-6.3
–––
–––
–––
–––
–––
43
12
4.0
15
12
19
28
1.0
21
71
27
8.1
5640
1260
570
–––
–––
–––
2.2
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
ns
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
–––
–––
2.2
3.0
2.25
–––
1.0
150
100
-100
–––
65
–––
–––
V
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 30A
g
V
GS
= 4.5V, I
D
= 24A
g
V
mV/°C
µA
nA
S
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 24A
V
DS
= 15V
nC
V
GS
= 4.5V
I
D
= 24A
See Fig. 17
V
DS
= 16V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
g
I
D
= 24A
Clamped Inductive Load
V
DS
= V
GS
, I
D
= 250µA
–––
–––
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
e
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
–––
0.78
43
46
240
1.2
65
69
V
ns
nC
Min.
–––
Typ. Max. Units
–––
89
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 24A, V
GS
= 0V
g
T
J
= 25°C, I
F
= 24A
di/dt = 100A/µs
g
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF6678
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
h
h
k
Parameter
Max.
2.8
1.8
89
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
100
hl
il
jl
kl
Parameter
Typ.
–––
12.5
20
–––
1.0
0.022
Max.
45
–––
–––
1.4
–––
Units
°C/W
gÃ
W/°C
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
1
τ
2
τ
3
τ
4
τ
4
τ
A
1
Ri (°C/W)
0.6784
17.299
17.566
9.4701
τi
(sec)
0.00086
0.57756
8.94000
106
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
T
C
measured with thermocouple incontact with top (Drain) of part.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with a
thin gap filler and heat sink.
(still air)
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Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
IRF6678
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
2.5V
2.5V
≤
60µs PULSE WIDTH
1
0.1
1
Tj = 25°C
10
10
≤
60µs PULSE WIDTH
Tj = 150°C
100
1000
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 15V
≤
60µs PULSE WIDTH
100
T J = 150°C
10
T J = 25°C
T J = -40°C
Fig 5.
Typical Output Characteristics
1.5
ID = 29A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current
(Α)
1.0
1
V GS = 10V
V GS = 4.5V
0.1
1
2
3
4
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Fig 7.
Normalized On-Resistance vs. Temperature
25
T J = 25°C
20
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
C, Capacitance(pF)
10000
Ciss
15
Vgs = 3.0V
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
1000
Coss
Crss
10
5
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
60
100
140
180
220
260
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Normalized Typical On-Resistance vs.
Drain Current and Gate Voltage
ID, Drain Current (A)
4
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IRF6678
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
T J = 150°C
T J = 25°C
1
T J = 40°C
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VSD, Source-to-Drain Voltage (V)
10
1msec
10msec
1
T A = 25°C
T J = 150°C
0.1
0.01
Single Pulse
0.10
1.00
10.00
100.00
Fig 10.
Typical Source-Drain Diode Forward Voltage
180
VGS(th) Gate threshold Voltage (V)
Fig11.
Maximum Safe Operating Area
2.2
VDS, Drain-to-Source Voltage (V)
160
140
ID, Drain Current (A)
Limited By Package
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 250µA
120
100
80
60
40
20
0
25
50
75
100
125
150
T C , Case Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
900
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Threshold Voltage vs. Temperature
800
700
600
500
400
300
200
100
0
25
50
75
ID
TOP
8.7A
11A
BOTTOM 23A
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
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