PD -
97406A
INSULATED GATE BIPOLAR TRANSISTOR
Features
•
•
•
•
•
•
•
•
•
Low V
CE (ON)
Trench IGBT Technology
Low Switching Losses
Maximum Junction Temperature 175 °C
10
μS
short Circuit SOA
Square RBSOA
100% of The Parts Tested for I
LM
Positive V
CE (ON)
Temperature Coefficient
Tight Parameter Distribution
Lead Free Package
IRG7PSH73K10PbF
C
V
CES
= 1200V
I
C(Nominal)
= 75A
G
E
t
SC
≥
10μs, T
J(max)
=175°C
n-channel
V
CE(on)
typ. = 2.0V
C
E
C
G
Super-247
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low V
CE (ON)
and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
G
G a te
C
C o lle c to r
E
E m itte r
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
NOMINAL
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, V
GE
=15V
Clamped Inductive Load Current, V
GE
=20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Max.
1200
220
130
75
Units
V
c
A
d
225
300
±30
1150
580
-55 to +175
°C
V
W
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
g
Min.
Typ.
–––
0.24
40
Max.
0.13
–––
–––
Units
°C/W
g
–––
–––
–––
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
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9/8/10
IRG7PSH73K10PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
V
GE(th)
ΔV
GE(th)
/ΔTJ
gfe
I
CES
I
GES
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Min.
1200
—
—
—
—
5.0
—
—
—
—
—
Typ.
—
1.58
2.0
2.50
2.60
—
-18
53
1.0
2340
—
Max. Units
Conditions
—
V V
GE
= 0V, I
C
= 250μA
—
V/°C V
GE
= 0V, I
C
= 5.0mA (25°C-175°C)
2.3
I
C
= 75A, V
GE
= 15V, T
J
= 25°C
—
V I
C
= 75A, V
GE
= 15V, T
J
= 150°C
—
I
C
= 75A, V
GE
= 15V, T
J
= 175°C
7.5
V V
CE
= V
GE
, I
C
= 3.5mA
—
mV/°C V
CE
= V
GE
, I
C
= 3.5mA (25°C - 175°C)
—
S V
CE
= 50V, I
C
= 75A, PW = 80μs
25
V
GE
= 0V, V
CE
= 1200V, T
J
= 25°C
μA
—
V
GE
= 0V, V
CE
= 1200V, T
J
= 175°C
±400
nA V
GE
= ±30V
f
e
e
e
f
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
360
87
180
7.7
4.6
12.3
63
118
267
114
11
7.4
18.4
62
110
330
237
9450
340
230
Max. Units
540
130
270
8.7
5.6
14.3
81
138
291
134
—
—
—
—
—
—
—
—
—
—
nC
mJ
I
C
= 75A
V
GE
= 15V
V
CC
= 600V
I
C
= 75A, V
CC
= 600V, V
GE
= 15V
R
G
= 4.7Ω, L = 200μH, T
J
= 25°C
I
C
= 75A, V
CC
= 600V, V
GE
= 15V
R
G
= 4.7Ω, L = 200μH, T
J
= 25°C
e
Conditions
e
Energy losses include tail & diode reverse recovery
ns
Ãe
mJ
I
C
= 75A, V
CC
= 600V, V
GE
=15V
R
G
=4.7Ω, L=200μH, T
J
= 175°C
I
C
= 75A, V
CC
= 600V, V
GE
=15V
R
G
= 4.7Ω, L = 200μH
T
J
= 175°C
Ãe
e
Energy losses include tail & diode reverse recovery
ns
pF
FULL SQUARE
10
—
—
μs
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
I
C
= 300A
V
CC
= 960V, Vp =1200V
Rg = 4.7Ω, V
GE
= +20V to 0V, T
J
=175°C
V
CC
= 600V, Vp =1200V ,T
J
= 150°C
Rg = 4.7Ω, V
GE
= +15V to 0V
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140)
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 20μH, R
G
= 5.0Ω.
Pulse width
≤
400μs; duty cycle
≤
2%.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
2
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IRG7PSH73K10PbF
100
80
Load Current ( A )
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 164W
60
40
Square wave:
60% of rated
voltage
I
20
Ideal diodes
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1
- Typical Load Current vs. Frequency
240
200
IC, Collector Current (A)
1200
1000
800
Ptot (W)
160
120
80
40
0
25
50
75
100
125
150
175
TC, Case Temperature (°C)
600
400
200
0
0
25
50
75
100
125
150
175
TC (°C)
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 3
- Power Dissipation vs. Case
Temperature
1000
100
10
μs
IC (A)
100
IC (A)
10
100
μs
1ms
10
1
DC
0.1
1
10
100
VCE (V)
1000
10000
1
10
100
VCE (V)
1000
10000
Fig. 4
- Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
=15V
Fig. 5
- Reverse Bias SOA
T
J
= 175°C; V
GE
=20V
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IRG7PSH73K10PbF
400
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
400
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
300
300
ICE (A)
200
200
100
100
0
0
2
4
6
8
10 12 14 16 18 20
VCE (V)
0
0
2
4
6
8
10 12 14 16 18 20
VCE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80μs
400
VGE = 18V
300
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
25
20
ICE (A)
200
VCE (V)
15
ICE = 38A
ICE = 75A
10
ICE = 150A
100
5
0
0
2
4
6
8
10 12 14 16 18 20
VCE (V)
0
5
10
VGE (V)
15
20
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80μs
25
25
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
20
20
VCE (V)
10
VCE (V)
15
ICE = 38A
ICE = 75A
ICE = 150A
15
10
ICE = 38A
ICE = 75A
ICE = 150A
5
5
0
5
10
VGE (V)
15
20
0
5
10
VGE (V)
15
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
4
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IRG7PSH73K10PbF
400
ICE, Collector-to-Emitter Current (A)
40000
300
TJ = 25°C
TJ = 175°C
30000
Energy (μJ)
EON
200
20000
EOFF
100
10000
0
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
0
40
60
80
100
I C (A)
120
140
160
Fig. 12-
Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
1000
tdOFF
tF
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 600V, R
G
= 5.0Ω; V
GE
= 15V
25000
EON
20000
Swiching Time (ns)
100
tR
tdON
Energy (μJ)
15000
EOFF
10000
5000
10
20
40
60
80
100
120
140
160
IC (A)
0
0
10
20
30
40
50
RG (Ω)
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 600V, R
G
= 5.0Ω; V
GE
= 15V
10000
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 600V, I
CE
= 75A; V
GE
= 15V
40
35
30
Time (μs)
450
400
350
tdOFF
Swiching Time (ns)
Tsc
Isc
1000
Current (A)
25
20
15
300
250
200
150
100
8
10
12
14
16
18
VGE (V)
100
tR
tdON
tF
10
5
10
0
10
20
30
40
50
RG (Ω)
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 600V, I
CE
= 75A; V
GE
= 15V
Fig. 17
- V
GE
vs. Short Circuit Time
V
CC
= 600V; T
C
= 150°C
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