VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 40 A
2
(A)
FEATURES
• Designed and qualified
JEDEC
®
-JESD 47
• Low I
GT
parts available
• 125 °C max. operating junction temperature
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
according
to
1 (K) (G) 3
TO-247AC
Available
APPLICATIONS
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
35 A
800 V, 1200 V
1.45 V
150 mA
-40 °C to +125 °C
TO-247AC
Single SCR
• Typical usage is in input rectification crowbar (soft start)
and AC switch motor control, UPS, welding and battery
charge
DESCRIPTION
The VS-40TPS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
RMS
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
40 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
35
A
55
800/1200
600
1.45
1000
100
-40 to +125
V
A
V
V/μs
A/μs
°C
UNITS
VOLTAGE RATINGS
PART NUMBER
V
RRM
/V
DRM
,
MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
800
800
1200
1200
V
RSM
,
MAXIMUM NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
900
900
10
VS-40TPS12APbF, VS-40TPS12A-M3
VS-40TPS12PbF, VS-40TPS12-M3
1300
1300
I
RRM
/I
DRM
AT 125 °C
mA
VS-40TPS08APbF, VS-40TPS08A-M3
VS-40TPS08PbF, VS-40TPS08-M3
Revision: 14-Sep-17
Document Number: 94388
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum continuous RMS
on-state current as AC switch
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum peak on-state voltage
Maximum rate of rise of turned-on current
Maximum holding current
Maximum latching current
Maximum reverse and direct leakage current
Maximum rate of rise of off-state voltage
40TPS12A
Maximum rate of rise of off-state voltage
40TPS12
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
dI/dt
I
H
I
L
I
RRM/
I
DRM
110 A, T
J
= 25 °C
T
J
= 25 °C
Anode supply = 6 V, resistive load, initial T
J
= 1 A, I
T
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 25 °C
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
RRM
/V
DRM
T
J
= 125 °C
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
Initial
T
J
= T
J
max.
TEST CONDITIONS
T
C
= 79 °C, 180° conduction half sine wave
VALUES UNITS
35
55
500
600
1250
1760
17 600
1.02
1.23
9.74
7.50
1.85
100
200
300
0.5
10
500
dV/dt
T
J
= T
J
maximum, linear to 80 % V
DRM
, R
g
- k = 100
1000
V/μs
mA
A
2
s
A
2
s
V
A
m
V
A/μs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
- V
GM
T
J
= - 40 °C
Maximum required DC gate voltage to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= - 40 °C
Maximum required DC gate current to trigger
I
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C, for 40TPS08APbF and 40TPS12APbF
Maximum DC gate voltage not to trigger
for 40TPS12
Maximum DC gate current not to trigger
for 40TPS12
Maximum DC gate voltage not to trigger
for 40TPS12A
Maximum DC gate current not to trigger
for 40TPS12A
V
GD
T
J
= 125 °C, V
DRM
= Rated value
I
GD
V
GD
T
J
= 125 °C, V
DRM
= Rated value
I
GD
1
mA
6
0.15
mA
V
Anode supply = 6 V
resistive load
Anode supply = 6 V
resistive load
TEST CONDITIONS
VALUES
10
2.5
2.5
10
4.0
2.5
1.7
270
150
80
40
0.25
V
mA
V
UNITS
W
A
V
Revision: 14-Sep-17
Document Number: 94388
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Maximum thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
SYMBOL
T
J
, T
Stg
R
thJC
DC operation
R
thJA
R
thCS
Mounting surface, smooth and greased
40
0.2
6
0.21
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
TEST CONDITIONS
VALUES
-40 to +125
0.6
UNITS
°C
Mounting torque
40TPS08A
Marking device
Case style TO-247AC
40TPS12A
40TPS08
40TPS12
Maximum Allowable Case T
emperature (°C)
40T .. S
PS eries
R
thJC
(DC) = 0.6 °C/ W
Maximum Allowable Case Temperature (°C)
130
120
110
130
120
110
40T .. S
PS eries
R
thJC
(DC) = 0.6 °C/ W
Conduction Angle
Conduction Period
100
90
80
70
0
30°
100
30°
90
80
70
0
10
20
30
40
50
60
Average On-state Current (A)
60°
90°
120°
180°
DC
60°
90°
120°
180°
10
20
30
40
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Revision: 14-Sep-17
Document Number: 94388
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com
Vishay Semiconductors
ine
Peak Half S Wa ve On-state Current (A)
Maximum Avera ge On-state Power Loss (W)
60
50
40
30
20
10
0
0
5
10
15
20
25
30
35
40
Avera ge On-sta te Current (A)
180°
120°
90°
60°
30°
550
500
450
RMS Limit
At Any Ra ted Load Condition And With
Rated V
RRM
App lied Following S
urge.
Initia l T
J
= 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
400
350
Conduction Angle
40T .. S
PS eries
T
J
= 125°C
300
250
1
40T .. S
PS eries
10
100
Number Of Equal Amplitude Half Cycle Current Puls (N)
es
Fig. 3 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average On-state Power Loss (W)
80
70
60
50
DC
180°
120°
90°
60°
30°
Peak Half S Wa ve On-state Current (A)
ine
600
550
500
450
400
350
300
Maximum Non Rep etitive S
urge Current
Versus Pulse T
rain Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 125°C
No Voltage Reapp lied
Rated V
RRM
Reapp lied
40 RMS Limit
30
Conduction Period
20
10
0
0
10
20
30
40
50
60
Avera ge On-sta te Current (A)
40T .. S
PS eries
T
J
= 125°C
40T .. S
PS eries
250
0.01
0.1
Pulse T in Duration (s)
ra
1
Fig. 4 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
100
Instanta neous On-state Current (A)
10
T
J
= 25°C
T
J
= 125°C
40T .. S
PS eries
1
0.5
1
1.5
2
Instantaneous On-state Voltag e (V)
Fig. 7 - On-State Voltage Drop Characteristics
Revision: 14-Sep-17
Document Number: 94388
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com
Vishay Semiconductors
(1) PGM = 100 W, t
p
= 500 μs
(2) PGM = 50 W, t
p
= 1 ms
(3) PGM = 20 W, t
p
= 2.5 ms
(4) PGM = 10 W, t
p
= 5 ms
100
Instantaneous
Gate
Voltage (V)
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30
Ω
t
r
= 0.5 μs, t
p
≥ 6 μs
b) Recommended load line for
≤ 30 % rated dI/dt: 20 V, 65
Ω
t
r
= 1 μs, t
p
≥ 6 μs
10
a)
b)
T
J
= - 40 °C
T
J
= 50 °C
T
J
= 125 °C
1
V
GD
I
GD
(4)
(3)
(2)
(1)
40TPS..Series
Frequency limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
1000
Instantaneous
Gate
Current (A)
Fig. 8 - Gate Characteristics
Instantaneous
Gate
Voltage (V)
100
Rectangular gate pulse
a) Recommended load line for rated dI/dt: 20 V, 30
Ω
t
r
= 0.5 μs, t
p
≥ 6 μs
b) Recommended load line for ≤ 30 % rated dI/dt: 20 V, 65
Ω
t
r
= 1 μs, t
p
≥ 6 μs
10
(1) PGM = 100 W, t
p
= 500 μs
(2) PGM = 50 W, t
p
= 1 ms
(3) PGM = 20 W, t
p
= 2.5 ms
(4) PGM = 10 W, t
p
= 5 ms
T
J
= - 40 °C
T
J
= 25 °C
T
J
= 125 °C
1
(4)
(3)
(2)
(1)
V
GD
b)
0.1
a)
Frequency limited by PG(AV)
0.1
0.0001
I
GD
0.001
0.01
1
10
100
1000
Instantaneous
Gate
Current (A)
Fig. 9 - Gate Characteristics, 40TPS..A Series
Transient Thermal Impedance Z
thJC
(°C/W)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Steady State
Value
(DC Operation)
Single
Pulse
40TPS..
Series
0.01
0.0001
0.001
0.01
0.1
1
Square
Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z
thJC
Characteristics
Revision: 14-Sep-17
Document Number: 94388
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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