LVB1560
www.vishay.com
Vishay General Semiconductor
Low V
F
Single-Phase Single In-Line Bridge Rectifiers
FEATURES
• UL recognition file number E54214, Vol. 1
• Thin single in-Iine package
• Oxide planar chip junction
• Low forward voltage drop
• High surge current capability
• High case dielectric strength of 2500 V
RMS
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
~
~
~
~
Case Style GSIB-5S
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances and
white-goods applications specially for telecom power
supply, high efficiency desktop PC and server SMPS.
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 7.5 A, T
A
= 125 °C
T
J
max.
Diode variations
GSIB-5S
15 A
600 V
400 A
10 μA
0.73 V
150 °C
In-Line
MECHANICAL DATA
Case:
GSIB-5S
Epoxy meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked on body
Mounting Torque:
10 cm-kg (8.8 in-lbs) maximum
Recommended Torque:
5.7 cm-kg (5 in-lbs)
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified
output current at
T
C
= 125 °C
T
A
= 25 °C
SYMBOL
V
RRM
I
O (1)
I
O (2)
I
FSM
I
2
t
T
J
, T
STG
LVB1560
600
15
3.6
400
664
- 55 to + 150
UNIT
V
A
A
A
2
s
°C
Non-repetiitive peak forward surge current 8.3 ms single
sine-wave, T
J
= 25 °C
Rating for fusing (t < 8.3 ms)
T
J
= 25 °C
Operating junction and storage temperature range
Notes
(1)
Unit case mounted on aluminum plate heatsink
(2)
Units mounted on PCB without heatsink
Revision: 26-Jun-13
Document Number: 89392
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
LVB1560
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Instantaneous forward voltage
Reverse current per diode
Typical reverse recovery time
Typical junction capacitance
TEST CONDITIONS
I
F
= 7.5 A
V
R
= 600 V
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
SYMBOL
V
F (1)
I
R (2)
t
rr
C
J
TYP.
0.87
0.73
0.2
60
1.8
260
MAX.
0.90
-
10
-
-
-
UNIT
V
μA
μs
pF
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
4.0 V, 1 MHz
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum thermal resistance
Notes
(1)
With heatsink
(2)
Without heatsink, free air
SYMBOL
R
JA
(2)
R
JC
(1)
LVB1560
25
1.0
UNIT
°C/W
EMC SURGE IMMUNITY TEST STANDARD
(T
A
= 25 °C, unless otherwise noted)
STANDARD
TEST TYPE
TEST CONDITIONS
SYMBOL
V
PEAK
CLASS
-
VALUE
6 kV maximum
IEC 61000-4-5 Power supply coupling mode, line to line 1.2/50 μs waveform, R = 2
,
T
A
= 25 °C
(1)
Note
(1)
Immunity to IEC 61000-4-5 peak pulse voltage test, 1.2/50 μs, 2
,
5 times each of positive and negative polarity test
ORDERING INFORMATION
(Example)
PREFERRED P/N
LVB1560-M3/45
UNIT WEIGHT (g)
6.9
PREFERRED PACKAGE CODE
45
BASE QUANTITY
20
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Average Forward Rectified Current (A)
20
5
Average Forward Output Current (A)
With Heatsink, Sine-Wave, R-Load
15
4
3
10
T
C
Measurement
2
5
1
Without Heatsink
Sine-wave,
R-Load,
Free Air, T
A
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
0
Temperature (°C)
Ambient Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 2 - Forward Current Derating Curve
Revision: 26-Jun-13
Document Number: 89392
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
LVB1560
www.vishay.com
Vishay General Semiconductor
1000
28
Instantaneous Reverse Current (μA)
Forward Power Dissipation (W)
24
20
16
12
8
4
0
0
2
4
6
8
10
12
14
16
T
A
= 150 °C
100
T
A
= 125 °C
10
T
A
= 100 °C
1
0
.1
T
A
= 25 °C
0.01
10
20
30
40
50
60
70
80
90
100
Average Forward Current ( A )
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Forward Power Dissipation
100
Fig. 5 - Typical Reverse Characteristics Per Diode
1000
T
J
= 25 °C
f = 1 MHz
V
stg
= 50 mV
P-P
Instantaneous Forward Current (A)
10
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
Junction Capacitance (pF)
100
1
10
0.1
0.3
1
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 4 - Typical Forward Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS
in millimeters
Case Style GSIB-5S
4.6 ± 0.2
3.6 ± 0.2
3.5 ± 0.2
3.2 ± 0.2
2.7 ± 0.2
30 ± 0.3
20 ± 0.3
+
2.5 ± 0.2
2.2 ± 0.2
1 ± 0.1
10 ± 0.2
17.5 ± 0.5
4 ± 0.2
7.5
± 0.2
7.5
± 0.2
0.7 ± 0.1
Revision: 26-Jun-13
Document Number: 89392
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
11 ± 0.2
5
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www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000