AC INPUT/PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA1-M
H11AA2-M
PACKAGE
H11AA3-M
H11AA4-M
SCHEMATIC
1
6 BASE
2
5 COLL
3
4 EMITTER
DESCRIPTION
The H11AAX-M series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single
silicon phototransistor output.
FEATURES
•
•
•
•
Bi-polar emitter input
Built-in reverse polarity input protection
Underwriters Laboratory (UL) recognized File #E90700, Volume 2
VDE approved File #102497 (ordering option ‘V’)
APPLICATIONS
• AC line monitor
• Unknown polarity DC sensor
• Telephone line interface
© 2004 Fairchild Semiconductor Corporation
Page 1 of 9
1/9/04
AC INPUT/PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA1-M
H11AA2-M
H11AA3-M
H11AA4-M
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C Unless otherwise specified)
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation
Derate Linearly From 25°C
EMITTER
Continuous Forward Current
Forward Current – Peak (1 µs pulse, 300 pps)
LED Power Dissipation
Derate Linearly From 25°C
DETECTOR
Continuous Collector Current
Detector Power Dissipation
Derate linearity from 25°C
I
C
P
D
All
All
50
150
1.76
mA
mW
mW/°C
I
F
I
F
(pk)
P
D
All
All
All
60
±1.0
120
1.41
mA
A
mW
mW/°C
T
STG
T
OPR
T
SOL
P
D
All
All
All
All
-40 to +150
-40 to +100
260 for 10 sec
250
2.94
°C
°C
°C
mW
mW/°C
Symbol
Device
Value
Units
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Capacitance
DETECTOR
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Base
Emitter to Collector
Leakage Current
Collector to Emitter
Capacitance
Collector to Emitter
Collector to Base
Emitter to Base
*Typical values at T
A
= 25°C
© 2004 Fairchild Semiconductor Corporation
Test Conditions
Symbol
Device
Min
Typ*
Max
Unit
I
F
= ±10 mA
V
F
= 0 V, f = 1.0 MHz
V
F
C
J
All
All
1.17
80
1.5
V
pF
I
C
= 1.0 mA, I
F
= 0
I
C
= 100 µA, I
F
= 0
I
E
= 100 µA, I
F
= 0
I
E
= 100 µA, I
F
= 0
BV
CEO
BV
CBO
BV
EBO
BV
ECO
All
All
All
All
H11AA1,3,4(-M)
H11AA2-M
All
All
All
30
70
5
7
100
120
10
10
1
1
10
80
15
50
200
V
V
V
V
V
CE
= 10 V, I
F
= 0
I
CEO
nA
V
CE
= 0, f = 1 MHz
V
CB
= 0, f = 1 MHz
V
EB
= 0, f = 1 MHz
C
CE
C
CB
C
EB
pF
pF
pF
Page 2 of 9
1/9/04
AC INPUT/PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA1-M
H11AA2-M
H11AA3-M
H11AA4-M
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
Characteristics
Test Conditions
Symbol
Device
H11AA4-M
Current Transfer Ratio,
Collector to Emitter
I
F
= ±10 mA, V
CE
= 10 V
CTR
CE
H11AA3-M
H11AA1-M
H11AA2-M
Current Transfer Ratio,
Symmetry
Saturation Voltage
Collector to Emitter
I
F
= ±10 mA, V
CE
= 10 V (Figure 11)
I
F
= ±10 mA, I
CE
= 0.5 mA
V
CE(SAT)
All
All
Min
100
50
20
10
.33
3.0
.40
V
%
Typ*
Max
Units
ISOLATION CHARACTERISTICS
Characteristic
Package Capacitance input/output
Isolation Voltage
Isolation Resistance
*Typical values at T
A
= 25°C
Test Conditions
V
I-O
= 0, f = 1 MHz
f = 60 Hz, t = 1 sec.
V
I-O
= 500 VDC
Symbol
C
I-O
V
ISO
R
ISO
7500
10
11
Min
Typ*
0.7
Max
Units
pF
Vac(pk)
Ω
© 2004 Fairchild Semiconductor Corporation
Page 3 of 9
1/9/04
AC INPUT/PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA1-M
H11AA2-M
H11AA3-M
H11AA4-M
Fig. 1 Input Voltage vs. Input Current
100
T
A
= 25°C
80
1.2
1.4
Fig. 2 Normalized CTR vs. Forward Current
T
A
= 25°C
V
CE
= 5V
Normalized to I
F
= 10mA
I
F
- INPUT CURRENT (mA)
60
40
20
0
-20
-40
-60
0.2
1.0
NORMALIZED CTR
0.8
0.6
0.4
-80
-100
-2.0
0.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
0
5
10
15
20
V
F
- INPUT VOLTAGE (V)
I
F
- FORWARD CURRENT (mA)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4
V
CE
= 5V
Normalized to I
F
= 10mA, T
A
= 25°C
1.2
I
F
= 10mA
Fig. 4 CTR vs. RBE (Unsaturated)
1.0
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
V
0.9
0.8
0.7
CE
= 5V
T
A
= 25°C
NORMALIZED CTR
1.0
I
F
= 5mA
0.8
I
F
= 20mA
0.6
I
F
= 20mA
0.6
I
F
= 10mA
0.5
I
F
= 5mA
0.4
0.3
0.2
0.1
0.0
10
100
1000
0.4
0.2
-60
-40
-20
0
20
40
60
80
100
T
A
- AMBIENT TEMPERATURE (°C)
R
BE
- BASE RESISTANCE (kΩ)
Fig. 5 CTR vs. RBE (Saturated)
1.0
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
V
CE (SAT)
- COLLECTOR-EMITTER SATURATION VOLTAGE (V)
100
T = 25°C
A
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
V
0.9
0.8
0.7
CE
= 0.3V
T
A
= 25°C
10
I
F
= 20mA
0.6
I
F
= 10mA
0.5
I
F
= 5mA
0.4
0.3
0.2
0.1
0.0
10
100
1000
1
I
F
= 2.5mA
I
F
= 5mA
0.1
0.01
I
F
= 10mA
I
F
= 20mA
R
BE
- BASE RESISTANCE (k
Ω)
0.001
0.01
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
© 2004 Fairchild Semiconductor Corporation
Page 4 of 9
1/9/04
AC INPUT/PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA1-M
1000
I
F
= 10mA
V
CC
= 10V
T = 25°C
A
H11AA2-M
H11AA3-M
Fig. 8 Normalized t
on
vs. R
BE
7
V
CC
= 10V
I
C
= 2mA
R
L
= 100Ω
T = 25°C
A
H11AA4-M
Fig. 7 Switching Speed vs. Load Resistor
100
NORMALIZED t
on
- (t
on(R
BE
)
/ t
on(open)
)
6
SWITCHING SPEED - (µs)
5
T
off
10
T
f
4
3
T
on
1
T
r
2
1
0.1
0.1
1
10
100
0
10
100
1000
10000
100000
R-LOAD RESISTOR (kΩ)
R
BE
- BASE RESISTANCE (k
Ω)
Fig. 9 Normalized t
off
vs. R
BE
3.0
10000
Fig. 10 Dark Current vs. Ambient Temperature
I
CEO
- COLLECTOR -EMITTER DARK CURRENT (nA)
NORMALIZED t
off
- (t
off(R
BE
)
/ t
off(open)
)
2.5
V
CC
= 10V
I
C
= 2mA
R
L
= 100Ω
T = 25°C
A
1000
2.0
100
1.5
10
V
CE
= 30V
V
CE
= 10V
1.0
1
0.5
0.0
10
100
1000
10000
100000
0.1
0
20
40
60
80
100
R
BE
- BASE RESISTANCE (kΩ)
T
A
- AMBIENT TEMPERATURE (°C)
Fig. 11 Output Symmetry Characteristics
10
5
NORMALIZED OUTPUT CURRENT
I
F
=
1
.5
I
F
=
I
- 10mA
I
I
10mA
I
.1
.05
NORMALIZED TO:
V
CE
= 10 V
I
F
= 10 mA
THE MAXIMUM PEAK
OUTPUT CURRENT
WILL BE NO MORE
THAN THREE TIMES
THE MINIMUM PEAK
OUTPUT CURRENT AT
I
F
=
±10
mA
.05
.1
.5
1
5
10
.01
.005
.01
V
CE
- COLLECTOR TO EMITTER VOLTAGE (V)
© 2004 Fairchild Semiconductor Corporation
Page 5 of 9
1/9/04
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
