4–PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11AA814 SERIES
H11A817 SERIES
PACKAGE DIMENSIONS
DESCRIPTION
The QT Optoelectronics H11AA814 Series consists
of two gallium arsenide infrared emitting diodes, con-
nected in inverse parallel, driving a single silicon
phototransistor in a 4-pin dual in-line package.
.380
(9.64)
MAX
.012 (.30)
.007 (.20)
.055 (1.40)
.047 (1.20)
4
3
.270 (6.86)
.248 (6.30)
.327
(8.30)
MAX
.300
(7.62)
MIN
The H11A817 Series consists of a gallium arsenide
infrared emitting diode driving a silicon phototransis-
tor in a 4-pin dual in-line package.
1
2
.187 (4.75)
.175 (4.45)
FEATURES
0 to 15°
s
s
.200
(5.10)
MAX
.158 (4.01)
.144 (3.68)
.020 (.51) MIN
.154 (3.90)
.120 (3.05)
Compact 4-pin package
Current transfer ratio in selected groups:
H11AA814: 20-300%
H11AA814A: 50-150%
H11A817:
H11A817A:
H11A817B:
H11A817C:
H11A817D:
50-600%
80-160%
130-260%
200-400%
300-600%
.022 (.56)
.015 (.40)
.100 (2.54) TYP
APPLICATIONS
1
4
COLLECTOR
ANODE
1
4
COLLECTOR
2
3
EMITTER
CATHODE
2
3
EMITTER
Equivalent Circuit (H11AA814)
Equivalent Circuit (H11A817)
H11AA814 Series
s
AC line monitor
s
Unknown polarity DC sensor
s
Telephone line interface
H11A817 Series
s
Power supply regulators
s
Digital logic inputs
s
Microprocessor inputs
s
Industrial controls
NOTE: ALL DIMENSIONS ARE IN INCHES (mm)
PACKAGE CODE T
ABSOLUTE MAXIMUM RATING
TOTAL PACKAGE
Storage temperature . . . . . . . . . . . . . . . . .-55° to 150° C
Operating temperature . . . . . . . . . . . . . . . -55° to 100° C
Lead solder temperature . . . . . . . . . . . 260° C for 10 sec
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . 200 mW
INPUT DIODE
Power dissipation (25° C ambient) . . . . . . . . . . . .70 mW
Derate linearly (above 25° C) . . . . . . . . . . . .1.33 mW/° C
Continuous forward current . . . . . . . . . . . . . . . . . . 50 mA
Peak forward current (1 µs pulse, 300 pps) . . . . . . . . .1 A
Reverse voltage (H11A817) . . . . . . . . . . . . . . . . . . . . 5 V
OUTPUT TRANSISTOR
Power dissipation (25° C ambient) . . . . .150 mW
Derate linearly (above 25° C) . . . . . .2.0 mW/° C
V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V
V
ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Continuous collector current . . . . . . . . . . 50 mA
4–PIN PHOTOTRANSISTOR OPTOCOUPLERS
ELECTRO-OPTICAL CHARACTERISTICS
(T
A
= 25° C Unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
(Applies to all unless indicated otherwise)
PARAMETER
INPUT DIODE
Forward voltage
H11A817
H11AA814
Reverse current
H11A817
OUTPUT TRANSISTOR
Breakdown voltage
Collector to emitter
Emitter to collector
Collector dark current
Capacitance
BV
CEO
BV
ECO
I
CEO
C
CE
35
6
100
10
.025
8
100
V
V
nA
pF
I
C
= 1 mA, I
F
= 0
I
E
= 100 µA, I
F
= 0
V
CE
= 10 V, I
F
= 0
V
CE
= 0 V, f = 1 MHz
I
R
.001
10
µA
V
R
= 5 V
V
F
V
F
1.2
1.2
1.5
1.5
V
V
I
F
= 20 mA
I
F
= ±20 mA
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
TRANSFER CHARACTERISTICS
CHARACTERISTIC
DC current transfer ratio
H11AA814
H11AA814A
H11A817
H11A817A
H11A817B
H11A817C
H11A817D
Saturation Voltage
Rise time (non saturated)
Fall time (non saturated)
CTR
CTR
CTR
CTR
CTR
CTR
CTR
V
CE (SAT)
t
r
t
f
20
50
50
80
130
200
300
0.1
2.4
2.4
300
150
600
160
260
400
600
0.2
18
18
%
%
%
%
%
%
%
V
µs
µs
I
F
= (±)20 mA, I
C
= 1 mA
I
C
= 2 mA, V
CE
= 2 V,
R
L
= 100
Ω
I
C
= 2 mA, V
CE
= 2 V,
R
L
= 100
Ω
I
F
= ±1 mA,V
CE
= 5V
I
F
= ±1 mA,V
CE
= 5V
I
F
= 5 mA,V
CE
= 5V
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ISOLATION CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MIN
5300
10
11
TYP
MAX
UNITS
V
RMS
Ω
TEST CONDITIONS
1 Minute
V
I-O
= 500 VDC
V
I-O
= Ø, f = 1 MHz
Steady-state isolation voltage V
ISO
Isolation resistance
Isolation capacitance
R
ISO
C
ISO
0.5
pF
4–PIN PHOTOTRANSISTOR OPTOCOUPLERS
TYPICAL CHARACTERISTICS
1.4
1.2
I
F
= 10 mA
1.2
NORMALIZED CTR
CTR Normalized @ I
F
= 5 mA, V
CE
= 5 V, Ta = 25° C
CTR Normalized @ I
F
= 5 mA, V
CE
= 5 V, Ta = 25° C
1
1
NORMALIZED CTR
0.8
I
F
= 5 mA
0.8
0.6
0.4
0.6
0.2
0
0
5
10
15
20
25
30
0.4
-50
-25
0
+25
+50
+75
+100
FORWARD CURRENT – I
F
(mA)
AMBIENT TEMPERATURE (° C)
FIG. 1 - Normalized CTR vs. Forward Current
FIG. 2 - Normalized CTR vs. Ambient Temperature
.14
I
F
= 20 mA
I
C
= 1 mA
.12
1.5
.1
FORWARD VOLTAGE – V
F
(V)
1.3
1.7
.08
V
CE ( SAT)
(V)
T = -55° C
1.1
T = -25° C
0.9
T = 100° C
.06
.04
.02
0.7
0
-50
0.5
-25
0
25
50
75
100
125
0.1
0.2
0.5
1.0
2.0
5
10
20
50
100
AMBIENT TEMPERATURE (° C)
FORWARD CURRENT – I
F
(mA)
FIG. 3 - V
CE (SAT)
vs. Ambient Temperature
FIG. 4 - Forward Voltage vs. Forward Current
4–PIN PHOTOTRANSISTOR OPTOCOUPLERS
TYPICAL CHARACTERISTICS
25
10
I
F
= 20 mA
20
COLLECTOR CURRENT I
C
(mA)
1
V
CE
= 10 V
10
-1
15
I
CEO
( A)
I
F
= 5 mA
10
-5
10
-2
I
F
= 10 mA
10
10
-3
10
-4
5
I
F
= 1 mA
0
0
1
2
3
4
5
6
7
8
9
10
COLLECTOR–EMITTER VOLTAGE V
CE
(V)
10
-6
0
25
50
75
100
125
AMBIENT TEMPERATURE (° C)
FIG. 5 - Collector Current vs. Collector-Emitter Voltage
FIG. 6 - Collector Leakage Current vs. Ambient Temperature
1000
I
F
= 5 mA
V
CC
= 5 V
T
a
= 25° C
T
off
T
f
100
SWITCHING SPEED
(
S)
10
1
T
r
T
on
0.1
0.1
1
10
100
R-LOAD RESISTOR (k
Ω)
FIG. 7 - Switching Speed vs. Load Resistor (TYP)
Call QT Optoelectronics for more information or the phone number of your nearest distributor.
United States 800-533-6786 France 33 01/43.99.25.12 Germany 49 089/96.30.51 United Kingdom 44 [0] 1296/39.44.99 Asia/Pacific 603/735-2417
s
s
s
s
© 1996 QT Optoelectronics
QT-012-A
DS 104
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
