CM1400-03
6 Channel EMI Filter Array
with ESD Protection
Product Description
The CM1400−03 is a six channel low−pass filter array that reduces
EMI/RFI emissions while at the same time providing ESD protection.
It is used on data ports on mobile devices. To reduce EMI/RFI
emissions, the CM1400−03 integrates a pi−style filter (C−R−C) for
each of the 6 channels. Each high quality filter provides greater than
30 dB attenuation in the 800−2700 MHz range relative to the pass
band attenuation. These pi−style filters also support bidirectional
filtering, controlling EMI both to and from a data port connector.
In addition, the CM1400−03 provides a very high level of protection
for sensitive electronic components that may be subjected to
electrostatic discharge (ESD). The input pins are designed and
characterized to safely dissipate ESD strikes of
±15
kV, exceeding the
maximum requirement of the IEC 61000−4−2 international standard.
Using the MIL−STD−883 (Method 3015) specification for Human
Body Model (HBM) ESD, the device provides protection for contact
discharges to greater than
±30
kV.
The CM1400−03 is particularly well suited for portable electronics
(e.g., cellular telephones, PDAs, notebook computers) because of its
small package footprint and low weight.
The CM1400−03 incorporates
OptiGuardt
coating which results in
improved reliability at assembly. The CM1400−03 is available in a
space−saving, low−profile chip scale package with RoHS−compliant
lead−free finishing.
Features
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WLCSP15
CP SUFFIX
CASE 567BS
MARKING DIAGRAM
N003 MG
G
N003
= CM1400−03CP
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
CM1400−03CP
Package
CSP−15
(Pb−Free)
Shipping
†
3500/Tape & Reel
•
•
•
•
•
•
•
•
•
•
•
Functionally and Pin Compatible with CSPEMI306A Device
OptiGuardt
Coated for Improved Reliability at Assembly
Six Channels of EMI Filtering for Data Ports
Pi−Style EMI Filters in a Capacitor−Resistor−Capacitor (C−R−C)
Network
40 dB Absolute Attenuation (Typical) at 1 GHz
35 dB Attenuation (Typical) at 1 GHz Relative to Pass Band
±15
kV ESD Protection on Each Channel
(IEC 61000−4−2 Level 4, Contact Discharge)
±30
kV ESD Protection on Each Channel (HBM)
15−Bump, 2.960 mm X 1.330 mm Footprint Chip Scale Package
(CSP)
Chip Scale Package Features Extremely Low Lead Inductance for
Optimum Filter and ESD Performance
These Devices are Pb−Free and are RoHS Compliant
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Applications
•
EMI Filtering and ESD Protection for Both Data and
I/O Ports
•
Wireless Handsets
•
Handheld PCs / PDAs
•
MP3 Players
•
Notebooks
•
Desktop PCs
©
Semiconductor Components Industries, LLC, 2011
March, 2011
−
Rev. 4
1
Publication Order Number:
CM1400−03/D
CM1400−03
BLOCK DIAGRAM
100
W
FILTERn*
30 pF
30 pF
FILTERn*
GND
(Pins B1−B3)
1 of 6 EMI/RFI + ESD Channels
*See Package/Pinout Diagram for expanded pin information.
Table 1. PIN DESCRIPTIONS
15−bump CSP Package
Pin
A1
A2
A3
A4
A5
A6
B1−B3
C1
C2
C3
C4
C5
C6
Name
FILTER1
FILTER2
FILTER3
FILTER4
FILTER5
FILTER6
GND
FILTER1
FILTER2
FILTER3
FILTER4
FILTER5
FILTER6
Description
Filter Channel 1
Filter Channel 2
Filter Channel 3
Filter Channel 4
Filter Channel 5
Filter Channel 6
Device Ground
Filter Channel 1
Filter Channel 2
Filter Channel 3
Filter Channel 4
Filter Channel 5
Filter Channel 6
Orientation
Marking
C
B
Orientation
Marking
PACKAGE / PINOUT DIAGRAMS
1
2
Top View
(Bumps Down View)
3
4
5
6
A
+
N003
Bottom View
(Bumps Up View)
FILTER1 FILTER2 FILTER3 FILTER4 FILTER5 FILTER6
C1
GND
C2
B1
C3
GND
C4
B2
C5
B3
C6
GND
FILTER1 FILTER2 FILTER3 FILTER4 FILTER5 FILTER6
A1
A1
A2
A3
A4
A5
A6
CM1400−03CP
CSP Package
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
Rating
–65 to +150
100
600
Units
°C
mW
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Rating
–40 to +85
Units
°C
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2
CM1400−03
Table 4. ELECTRICAL OPERATING CHARACTERISTICS
(Note 1)
Symbol
R
C
TCR
TCC
V
DIODE
I
LEAK
V
SIG
Resistance
Capacitance
Temperature Coefficient of Resistance
Temperature Coefficient of Capacitance
Diode Voltage (reverse bias)
Diode Leakage Current (reverse bias)
Signal Voltage
Positive Clamp
Negative Clamp
In−system ESD Withstand Voltage
a) Human Body Model, MIL−STD−883,
Method 3015
b) Contact Discharge per IEC 61000−4−2
Level 4
Clamping Voltage during ESD Discharge
MIL−STD−883 (Method 3015), 8 kV
Positive Transients
Negative Transients
Cut−off Frequency
Z
SOURCE
= 50
W,
Z
LOAD
= 50
W
At 2.5 V DC
I
DIODE
= 10
mA
V
DIODE
= 3.3 V
I
LOAD
= 10 mA
5.6
−1.5
±30
±15
(Notes 2 and 3)
+10
–5
R = 100
W,
C = 30 pF
58
MHz
V
6.8
–0.8
At 2.5 V DC
Parameter
Conditions
Min
80
24
Typ
100
30
1200
−300
6.0
100
9.0
−0.4
Max
120
36
Units
W
pF
ppm/°C
ppm/°C
V
nA
V
V
ESD
(Note 2)
kV
V
CL
f
C
1. T
A
= 25°C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1, then clamping
voltage is measured at Pin C1.
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3
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