MSK3020,MSK3020 pdf中文资料,MSK3020引脚图,MSK3020电路-Datasheet-电子工程世界

ISO 9001 CERTIFIED BY DSCC

M.S. KENNEDY CORP.

H-BRIDGE

MOSFET POWER MODULE

3020

(315) 701-6751

4707 Dey Road Liverpool, N.Y. 13088

FEATURES:

•

Pin Compatible with MPM3002 and MPM3012

P and N Channel MOSFETs for Ease of Drive

N Channel Current Sensing MOSFET for Lossless Sensing

Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

Avalanche Rated Devices

100 Volt, 10 Amp Full H-Bridge

DESCRIPTION:

The MSK 3020 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package.

The MSK 3020 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom

transistors. The N Channel MOSFETS are current sensing to allow lossless current sensing for current controlled

applications. The MSK 3020 uses M.S. Kennedy's proven power hybrid technology to bring a cost effective high

performance circuit for use in today's sophisticated servo motor and disk drive systems. The MSK 3020 is pin

compatible with the MPM3002 and MPM3012 with some differences in specifications.

EQUIVALENT SCHEMATIC

TYPICAL APPLICATIONS

•

Stepper Motor Servo Control

Disk Drive Head Control

X-Y Table Control

Az-El Antenna Control

1

2

3

4

5

6

PIN-OUT INFORMATION

Gate Q1

Source Q1

Drain 1, 2

Gate Q2

Sense Q2

Kelvin Source 2, 3

7

8

9

10

11

12

Source 2, 3

Sense Q3

Gate Q3

Drain 3, 4

Gate Q4

Source 4

1

Rev. A 7/00

ABSOLUTE MAXIMUM RATINGS

V

DSS

V

DGDR

V

GS

I

D

I

DM

R

TH-JC

Drain to Source Voltage ........... 100V MAX

Drain to Gate Voltage

(RGS = 1 MW ) ........................ 100V MAX

Gate to Source Voltage

(Continuous) ........................... ±20V MAX

Continuous Current .................... 10A MAX

Pulsed Current ........................... 25A MAX

Thermal Resistance

(Junction to Case) ......................... 4.0°C/W

Sense Current - Continuous ...... 13 mA

Single Pulse Avalanche Energy

(Q1, Q4) ........................................................ 7.9 mJ

(Q2, Q3) ......................................................... 69 mJ

Junction Temperature ............................ +175°C MAX

Storage Temperature ........................ -55°C

to

1

5

0

°

C

Case Operating Temperature Range .... -55°C

to

1

2

5

°

C

Lead Temperature Range

(10 Seconds) ........................................... 300°C MAX

I

M

MAX

I

MM

Sense Current Peak ................. 33 mA

ELECTRICAL SPECIFICATIONS

MAX

Parameter

Drain-Source Breakdown Voltage

Drain-Mirror Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

Gate-Source Threshold Voltage

Drain-Source on Resistance

Forward Transconductance

2

3

1

T

J

T

ST

+

T

C

+

T

LD

Test Conditions 4

V

GS

= 0

I

D

= 0.25 mA (All Transistors)

V

DS

= 100V, (Q2, Q3)

V

GS

= 0

V

DS

= 100V V

GS

= 0V, (Q2, Q3)

V

DS

= -100V V

GS

= 0V, (Q1, Q4)

V

GS

= ±20V

V

DS

= 0V (All Transistors)

V

DS

= V

GS

I

D

= 250 µA (Q2, Q3)

V

DS

= V

GS

I

D

= 250 µA (Q1, Q4)

V

GS

= 10V I

D

= 8.4A (Q2, Q3)

V

GS

= -10V I

D

= -8.4A (Q1, Q4)

V

GS

= 10V I

D

= 8.4A (Q2, Q3)

V

GS

= -10V I

D

= -8.4A (Q1, Q4)

V

DS

= 50V I

D

= 8.4A (Q2, Q3)

V

DS

= -50V I

D

= -8.4A (Q1, Q4)

I

D

= 14A

V

DS

= 80V

V

GS

= 10V

V

DD

= 50V

I

D

= 14A

R

G

= 12W

R

D

= 3.5W

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V I

D

= 14A

I

D

= -8.4A

V

DS

= -80V

V

GS

= -10V

V

DD

= -50V

I

D

= -8.4A

R

G

= 9.1W

R

D

= 6.2W

V

GS

= 0V

V

DS

= -25V

f = 1 MHz

I

S

= 14A V

GS

= 0V (Q2, Q3)

I

S

= -14A V

GS

= 0V (Q1, Q4)

I

S

= 14A di/dt = 100A/µS (Q2, Q3)

I

S

= -8.4A di/dt = 100A/µS (Q1, Q4)

I

S

= 14A di/dt = 100A/µS (Q2, Q3)

I

S

= -8.4A di/dt = 100A/µS (Q1, Q4)

MSK 3020

Min.

Typ.

Max.

100

-

2.0

-2.0

-

4.7

3.2

-

Units

V

µA

nA

V

W

S

nC

nS

pF

r

nC

nS

pF

V

nS

µC

nC

N-CHANNEL (Q2, Q3)

Total Gate Charge

1

Gate-Source Charge 1

Gate-Drain Charge

1

Turn-On Delay Time 1

Rise Time

1

Turn-Off Delay Time 1

Fall Time

1

Input Capacitance

1

Output Capacitance 1

Reverse Transfer Capacitance 1

Output Capacitance of Sensing Cells 1

Current Sensing Ratio 1

P-CHANNEL (Q1, Q4)

Total Gate Charge

1

Gate-Source Charge 1

Gate-Drain Charge

1

Turn-On Delay Time 1

Rise Time

1

Turn-Off Delay Time 1

Fall Time

1

Input Capacitance

1

Output Capacitance 1

Reverse Transfer Capacitance 1

BODY DIODE

Forward on Voltage

Reverse Recovery Time

Reverse Recovery Charge

1

-

25

-25

±100

4.0

-4.0

0.26

0.31

0.16

0.20

-

26

5.5

11

-

1540

58

8.3

32

-

310

71

1.2

970

-

1390

-

9.5

42

22

25

700

320

83

9

-

15

58

45

46

760

260

170

2.5

-1.6

150

47

0.85

650

NOTES:

1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance

but are for reference only.

2 Resistance as seen at package pins.

3 Resistance for die only; use for thermal calculations.

4 T

A

= 25°C unless otherwise specified.

Rev. A 7/00

2

APPLICATION NOTES

N-CHANNEL GATES (Q2, Q3):

For driving the N-Channel gates, it is important to keep in mind that it is essentially like driving a capacitance to a sufficient

voltage to get the channel fully on. Driving the gates to +15 volts with respect to their sources assures that the transistors

are on. This will keep the dissipation down to a minimum level. How quickly the gate gets turned ON and OFF will

determine the dissipation of the transistor while it is transitioning from OFF to ON and vice-versa. Turning the gate ON and

OFF too slow will cause excessive dissipation, while turning it ON and OFF too fast will cause excessive switching noise in

the system. It is important to have as low a driving impedance as practical for the size of the transistor. Many motor drive

IC's have sufficient gate drive capability for the MSK 3020. If not, paralleled CMOS standard gates will usually be

sufficient. A series resistor in the gate circuit slows it down, but also suppresses any ringing caused by stray iductances

in the MOSFET circuit. The selection of the resistor is determined by how fast the MOSFET wants to be switched. See

Figure 1 for circuit details.

FIGURE 1

P-CHANNEL GATES (Q1, Q4):

Most everything applies to driving the P-Channel gates as the N-Channel gates. The only difference is that the P-Channel

gate to source voltage needs to be negative. Most motor drive IC's are set up with an open collector or drain output for

directly interfacing with the P-Channel gates. If not, an external common emitter switching transistor configuration (see

Figure 2) will turn the P-Channel MOSFET on. All the other rules of MOSFET gate drive apply here. For high supply

voltages, additional circuitry must be used to protect the P-Channel gate from excessive voltages.

FIGURE 2

BRIDGE DRIVE CONSIDERATIONS:

It is important that the logic used to turn ON and OFF the various transistors allow sufficient "dead time" between a high

side transistor and its low side transistor to make sure that at no time are they both ON. When they are, this is called

"shoot-through" and it places a momentary short across the power supply. This overly stresses the transistors and causes

excessive noise as well. See Figure 3.

FIGURE 3

This deadtime should allow for the turn on and turn off time of the transistors, especially when slowing them down with

gate resistors. This situation will be present when switching motor direction, or when sophisticated timing schemes are

Rev. A 7/00

3

used for servo systems such as locked antiphase PWM'ing for high bandwidth operation.

APPLICATION NOTES, CONT.

USING CURRENT SENSING MOSFETS:

A MOSFET transistor is constructed of many individual MOSFET cells connected in parallel. They share the current total

very evenly. If one of these cells are brought out to a pin, that cell will pass an accurate proportional amount of the total

current. This current can be used as a low power sense of the whole current without passing that whole current through a

sensing device like a resistor. This small current multiplied by the ratio specified on the data sheet equals the whole current.

There are several methods of working with the sense function to obtain the actual current.

1. Virtual Earth Sensing

The disadvantage is amplifying a current swing of 10 amps in 100 nSec to produce a 5V output means the op amp has to

slew 50V/µSec. This is beyond the capabilities of a lot of op amps.

2. Resistor Sensing

The disadvantage is R

T

voltage must be above the offset voltage of the op amp and R

T

must be much less than R

DS(ON)

of

the sensing cell or temperature shifts will affect accuracy.

4

Rev. A 7/00

TYPICAL PERFORMANCE CURVES

5

Rev. A 7/00

MSK3020

MSK3020概述

文档预览

MSK3020相似产品对比

推荐资源