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GS1G-T1

产品描述1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
产品类别半导体    分立半导体   
文件大小41KB,共3页
制造商Won-Top Electronics Co., Ltd.
官网地址https://www.wontop.com/
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GS1G-T1概述

1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC

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W TE
PO WE R SEM IC O ND UC TO R S
GS1A – GS1M
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Features
!
!
!
!
!
!
!
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop
Surge Overload Rating to 30A Peak
Low Power Loss
Built-in Strain Relief
Plastic Case Material has UL Flammability
Classification Rating 94V-O
B
D
A
F
C
H
G
E
Mechanical Data
!
!
!
!
!
Case: Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
SMA/DO-214AC
Dim
Min
Max
A
2.50
2.90
B
4.00
4.60
C
1.40
1.60
D
0.152
0.305
E
4.80
5.28
F
2.00
2.44
G
0.051
0.203
H
0.76
1.52
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
L
= 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
GS1A
@T
A
=25°C unless otherwise specified
GS1B
GS1D
GS1G
GS1J
GS1K
GS1M
Unit
50
35
100
70
200
140
400
280
1.0
600
420
800
560
1000
700
V
V
A
I
FSM
V
FM
I
RM
t
rr
C
j
R
JL
T
j,
T
STG
30
1.10
5.0
200
2.5
15
30
-65 to +175
A
V
µA
µS
pF
K/W
°C
Note: 1. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm
2
land area.
GS1A – GS1M
1 of 3
© 2002 Won-Top Electronics

GS1G-T1相似产品对比

GS1G-T1 GS1B-T1 GS1D-T1 GS1A-T1 GS1J-T1 GS1K-T1 GS1M-T1
描述 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
是否Rohs认证 - 不符合 - 不符合 不符合 不符合 -
Reach Compliance Code - unknow - unknow unknow unknown -
ECCN代码 - EAR99 - EAR99 EAR99 EAR99 -
配置 - SINGLE - SINGLE SINGLE SINGLE -
二极管类型 - RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
最大正向电压 (VF) - 1.1 V - 1.1 V 1.1 V 1.1 V -
JESD-609代码 - e0 - e0 e0 e0 -
最大非重复峰值正向电流 - 30 A - 30 A 30 A 30 A -
元件数量 - 1 - 1 1 1 -
最高工作温度 - 175 °C - 175 °C 175 °C 175 °C -
最大输出电流 - 1 A - 1 A 1 A 1 A -
最大重复峰值反向电压 - 100 V - 50 V 600 V 800 V -
最大反向恢复时间 - 2.5 µs - 2.5 µs 2.5 µs 2.5 µs -
表面贴装 - YES - YES YES YES -
端子面层 - Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Base Number Matches - 1 - 1 1 1 -

 
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