Preliminary Technical Information
GigaMOS
TM
Trench
TM
HiperFET
TM
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
dv/dt
T
J
T
JM
T
stg
T
L
T
SOLD
V
ISOL
F
C
Weight
Test Conditions
T
J
= 25C to 175C
T
J
= 25C to 175C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
MMIX1F230N20T
V
DSS
I
D25
t
rr
=
=
R
DS(on)
200V
156A
8.3m
200ns
D
G
S
Maximum Ratings
200
200
20
30
156
630
100
5
600
20
-55 ... +175
175
-55 ... +175
V
V
V
V
A
A
A
J
W
V/ns
C
C
C
C
C
V~
N/lb.
g
Isolated Tab
D
S
G
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
175C
G = Gate
S = Source
Features
D = Drain
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
300
260
2500
50..200 / 11..45
8
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Substrate
-
Excellent Thermal Transfer
-
Increased Temperature and Power
Cycling Capability
-
High Isolation Voltage (2500V~)
175°C Operating Temperature
Very High Current Handling
Capability
Fast Intrinsic Diode
Avalanche Rated
Very Low R
DS(on)
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
Characteristic Values
Min.
Typ.
Max.
200
3.0
5.0
200
Note 2, T
J
= 150C
V
V
nA
Advantages
Easy to Mount
Space Savings
High Power Density
50
A
3 mA
8.3 m
Applications
V
GS
= 10V, I
D
= 60A, Note 1
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High Speed Power Switching
Applications
© 2014 IXYS CORPORATION, All Rights Reserved
DS100433A(04/14)
MMIX1F230N20T
Symbol
Test Conditions
(T
J
= 25C Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
R
Gi
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
R
thJA
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 60A, V
GS
= 0V, Note 1
I
F
= 115A, V
GS
= 0V
-di/dt = 100A/s
V
R
= 75V
0.74
10.6
Characteristic Values
Min. Typ.
Max.
230
920
1.3
A
A
V
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Gate Input Resistance
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= I
D
= 0.5 • I
D25
R
G
= 1 (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 60A, Note 1
Characteristic Values
Min.
Typ.
Max.
90
150
24
2440
60
1.15
58
38
62
17
358
138
60
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.25C/W
0.15C/W
30C/W
200 ns
μC
A
Notes:
1. Pulse test, t
300μs, duty cycle, d
2%.
2. Part must be heatsunk for high-temp Ices measurement.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
MMIX1F230N20T
Package Outline
PIN:
1
= Gate
5-12 = Source
13-24 = Drain
© 2014 IXYS CORPORATION, All Rights Reserved
MMIX1F230N20T
Fig. 1. Output Characteristics @ T
J
= 25ºC
240
V
GS
= 15V
10V
8V
7V
250
350
300
V
GS
= 15V
10V
8V
7V
Fig. 2. Extended Output Characteristis @ T
J
= 25ºC
200
I
D
- Amperes
160
I
D
- Amperes
200
150
100
120
6V
80
6V
40
5V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
50
5V
0
0
1
2
3
4
5
6
7
8
9
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 150ºC
240
V
GS
= 15V
10V
8V
3.0
2.6
7V
2.2
1.8
Fig. 4. R
DS(on)
Normalized to I
D
= 115A Value vs.
Junction Temperature
V
GS
= 10V
200
I
D
- Amperes
160
6V
120
R
DS(on)
- Normalized
I
D
= 230A
I
D
= 115A
1.4
1.0
0.6
0.2
80
40
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-50
-25
0
25
50
75
100
125
150
175
V
DS
- Volts
T
J
- Degrees Centigrade
3.4
3.0
2.6
2.2
1.8
1.4
Fig. 5. R
DS(on)
Normalized to I
D
= 115A Value vs.
Drain Current
V
GS
= 10V
Fig. 6. Drain Current vs. Case Temperature
180
160
140
R
DS(on)
- Normalized
T
J
= 175ºC
120
I
D
- Amperes
T
J
= 25ºC
100
80
60
40
20
0
1.0
0.6
0
50
100
150
200
250
300
350
-50
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
MMIX1F230N20T
Fig. 7. Input Admittance
200
180
160
140
120
100
80
60
- 40ºC
40
20
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
40
0
0
20
40
60
80
100
120
140
160
180
200
T
J
= 150ºC
25ºC
200
25ºC
160
120
80
150ºC
280
T
J
= - 40ºC
240
Fig. 8. Transconductance
V
GS
- Volts
g
f s
- Siemens
I
D
- Amperes
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
300
10
9
250
8
7
V
DS
= 100V
I
D
= 115A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
200
V
GS
- Volts
T
J
= 150ºC
T
J
= 25ºC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
6
5
4
3
2
1
150
100
50
0
0
0
40
80
120
160
200
240
280
320
360
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1,000
Fig. 12. Forward-Bias Safe Operating Area
R
DS(on)
Limit
Ciss
100
25µs
f
= 1 MHz
Capacitance - PicoFarads
10,000
I
D
- Amperes
1,000
C oss
100µs
10
100
C rss
10
0
5
10
15
20
25
30
35
40
1
1
10
100
1,000
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
1ms
V
DS
- Volts
V
DS
- Volts
© 2014 IXYS CORPORATION, All Rights Reserved
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