DATA SHEET
SILICON TRANSISTOR
UPA812T
FEATURES
•
•
•
•
LOW NOISE FIGURE:
NF = 1.4 dB TYP at 1 GHz
HIGH GAIN:
|S
21E
|
2
= 12 dB TYP at 1 GHz
•
LOW CURRENT OPERATION
HIGH GAIN BANDWIDTH:
f
T
= 7 GHz
The UPA812T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
T
, low voltage bias and small size make this device suited for
various hand-held wireless applications.
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1.3
3
0.9
±
0.1
0.7
DESCRIPTION
UE
2.1
±
0.1
1.25
±
0.1
2.0
±
0.2
0.65
1
6
5
2
4
SMALL PACKAGE STYLE:
2 NE681 Die in a 2 mm x 1.25 mm package
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE S06
(Top View)
ABSOLUTE MAXIMUM
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
PT
T
J
T
STG
PARAMETERS
RATINGS
1
(T
A
= 25°C)
UNITS
V
V
RATINGS
20
10
Collector to Base Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
1 Die
2 Die
Junction Temperature
Storage Temperature
Collector to Emitter Voltage
V
1.5
65
CO
mW
mW
°C
°C
110
200
150
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
mA
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
-65 to +150
Note:
Pin 3 is identified with a circle on the bottom of the package.
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
DI
S
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
UPA812T
S06
UNITS
μ
A
μ
A
70
GHz
pF
dB
dB
0.85
10
12
1.4
1.7
4.5
100
7.0
0.9
MIN
TYP
MAX
0.8
0.8
240
SYMBOLS
I
CBO
I
EBO
f
T
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain at V
CE
= 3 V, I
C
= 7 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
h
FE
Ratio: h
FE1
= Smaller Value of Q
1
, or Q
2
h
FE2
= Larger Value of Q
1
or Q
2
h
FE1
|S
21E
|
2
NF
Cre
2
h
FE1
/h
FE2
Notes: 1. Pulsed measurement, pulse width
≤
350
μs,
duty cycle
≤
2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA812T-T1, 3K per reel.
D
0.2 (All Leads)
0.15
- 0.05
0 ~ 0.1
+0.10
NPN SILICON HIGH
FREQUENCY TRANSISTOR
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DI
S
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CO
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