Freescale Semiconductor
Technical Data
Document Number: MRF8HP21080H
Rev. 0, 6/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
•
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQA
= 150 mA, V
GSB
= 1.1 Vdc, P
out
= 16 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
14.1
14.5
14.4
η
D
(%)
46.7
46.2
45.7
Output PAR
(dB)
8.3
8.2
8.1
ACPR
(dBc)
--30.6
--32.1
--33.6
MRF8HP21080HR3
MRF8HP21080HSR3
2110-
-2170 MHz, 16 W AVG., 28 V
W-
-CDMA, LTE
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 110 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 3 dB Compression Point
≃
100 Watts
(1)
Features
•
Advanced High Performance In--Package Doherty
•
Production Tested in a Doherty Configuration
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
RoHS Compliant
•
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 13.
•
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 13.
CASE 465M-
-01, STYLE 1
NI-
-780-
-4
MRF8HP21080HR3
CASE 465H-
-02, STYLE 1
NI-
-780S-
-4
MRF8HP21080HSR3
Carrier
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
Peaking
(Top View)
2 RF
outB
/V
DSB
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(2,3)
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Figure 1. Pin Connections
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
220
3.3
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
1. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
©
Freescale Semiconductor, Inc., 2011. All rights reserved.
MRF8HP21080HR3 MRF8HP21080HSR3
1
RF Device Data
Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 77°C, 16 W CW, 28 Vdc, I
DQA
= 150 mA, V
GSB
= 1.1 Vdc, 2170 MHz
Case Temperature 81°C, 80 W CW
(3)
, 28 Vdc, I
DQA
= 150 mA, V
GSB
= 1.1 Vdc, 2170 MHz
Symbol
R
θJC
Value
(1,2)
1.0
0.61
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1C (Minimum)
A (Minimum)
III (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics - Side A
(4)
-
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DA
= 150 mA, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 0.5 Adc)
On Characteristics - Side B
(4)
-
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 75
μAdc)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 0.7 Adc)
V
GS(th)
V
DS(on)
1.2
0.1
2.0
0.24
2.7
0.3
V
GS(th)
V
GS(Q)
V
DS(on)
1.1
2.0
0.1
2.0
2.7
0.24
2.6
3.5
0.3
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
Symbol
Min
Typ
Max
Functional Tests
(5,6)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 150 mA, V
GSB
= 1.1 Vdc, P
out
= 16 W Avg.,
f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
13.8
42.4
7.3
—
—
14.4
45.7
8.1
--33.6
--17
16.8
—
—
--28.9
--9
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
6. Measurement made with device in a Doherty configuration.
(continued)
MRF8HP21080HR3 MRF8HP21080HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Typical Broadband Performance
(1)
—
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 150 mA, V
GSB
= 1.1 Vdc,
P
out
= 16 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
14.1
14.5
14.4
η
D
(%)
46.7
46.2
45.7
Output PAR
(dB)
8.3
8.2
8.1
ACPR
(dBc)
--30.6
--32.1
--33.6
IRL
(dB)
--17
--17
--18
Typical Performances
(1)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 150 mA, V
GSB
= 1.1 Vdc,
2110--2170 MHz Bandwidth
Characteristic
P
out
@ 1 dB Compression Point, CW
P
out
@ 3 dB Compression Point
(2)
IMD Symmetry @ 10 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 16 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Symbol
P1dB
P3dB
IMD
sym
Min
—
—
—
Typ
60
100
40
Max
—
—
—
Unit
W
W
MHz
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
78
0.4
0.012
0.01
—
—
—
—
MHz
dB
dB/°C
dB/°C
1. Measurement made with device in a Doherty configuration.
2. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
3
V
GSA
R2
B1
C22
V
DSA
C3
C15
C5 C9
R4
C1
C7
C8
C2
C12
R5
C6
C4
C10
C16
C11
CUT OUT AREA
C
C13
C17
C21
C19
C20
R1
P
C14
C18
MRF8HP21080
Rev. 4
V
GSB
R3
B2
C23
V
DSB
*C7, C8, C19 and C20 are mounted vertically.
Figure 2. MRF8HP21080HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8HP21080HR3(HSR3) Test Circuit Component Designations and Values
Part
B1, B2
C1, C2
C3, C4, C5, C6, C15, C16,
C17, C18
C7*, C8*, C9, C10, C13,
C14, C19*, C20*
C11
C12
C21
C22,C23
R1
R2, R3
R4, R5
PCB
Description
30
Ω
Ferrite Beads
1.6 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
6.8 pF Chip Capacitors
1.0 pF Chip Capacitor
1.5 pF Chip Capacitor
0.5 pF Chip Capacitor
220
μF,
50 V Electrolytic Capacitors
100
Ω,
4 W Chip Resistor
20 kΩ, 1/4 W Chip Resistors
3
Ω,
1/4 W Chip Resistors
0.030″,
ε
r
= 3.5
Part Number
MPZ2012S300A
ATC100B1R6BT500XT
GRM55DR61H106KA88L
ATC100B6R8CT500XT
ATC100B1R0BT500XT
ATC100B1R5BT500XT
ATC100B0R5BT500XT
227CKS050M
CW12010T0100GBK
CRCW120620K0JNEA
CRCW12063R00FKEA
R04350
Manufacturer
TDK
ATC
Murata
ATC
ATC
ATC
ATC
Illinois Capacitor
ATC
Vishay
Vishay
Rogers
MRF8HP21080HR3 MRF8HP21080HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
--1.6
ACPR (dBc)
--1.8
--2
--2.2
--2.4
--2.6
PARC (dB)
ACPR (dBc)
--15
--20
--25
--30
--35
--40
--45
η
D
,
DRAIN EFFICIENCY (%)
16
15.6
15.2
G
ps
, POWER GAIN (dB)
14.8
14.4
14
13.6
13.2
12.8
12.4
Single--Carrier W--CDMA
ACPR
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
2080
2100
2120
2140
2160
2180
2200
f, FREQUENCY (MHz)
V
DD
= 28 Vdc, P
out
= 16 W (Avg.)
I
DQA
= 150 mA
V
GSB
= 1.1 Vdc
PARC
η
D
G
ps
48
46
44
42
40
--26
--28
--30
--32
--34
--36
2220
12
2060
Figure 3. Single-
-Carrier Output Peak- -Average Ratio Compression
-to-
(PARC) Broadband Performance @ P
out
= 16 Watts Avg.
IMD, INTERMODULATION DISTORTION (dBc)
--20
--30
--40
--50
--60
IM7--L
--70
1
10
TWO--TONE SPACING (MHz)
100
V
DD
= 28 Vdc, P
out
= 10 W (PEP)
I
DQA
= 150 mA, V
GSB
= 1.1 Vdc
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency
of 2140 MHz
IM3--U
IM3--L
IM5--L
IM5--U
IM7--U
Figure 4. Intermodulation Distortion Products
versus Two-
-Tone Spacing
15
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
14.8
G
ps
, POWER GAIN (dB)
14.6
14.4
14.2
14
13.8
1
0
--1
--2
--3
--4
--5
--1 dB = 12 W
--2 dB = 17 W
--3 dB = 22 W
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
5
10
15
20
25
PARC
0
30
V
DD
= 28 Vdc, I
DQA
= 150 mA, V
GSB
= 1.1 Vdc
f = 2140 MHz, Single--Carrier W--CDMA
η
D
G
ps
60
50
40
ACPR
30
20
10
P
out
, OUTPUT POWER (WATTS)
Figure 5. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
5
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