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469-01

产品描述Bridge Rectifiers Single Phase Bridge
产品类别分立半导体    二极管   
文件大小372KB,共7页
制造商Microsemi
官网地址https://www.microsemi.com
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469-01概述

Bridge Rectifiers Single Phase Bridge

469-01规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Microsemi
包装说明S-PUFM-X4
针数4
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性HIGH RELIABILITY
最小击穿电压240 V
配置BRIDGE, 4 ELEMENTS
二极管元件材料SILICON
二极管类型BRIDGE RECTIFIER DIODE
最大正向电压 (VF)1.35 V
JESD-30 代码S-PUFM-X4
最大非重复峰值正向电流100 A
元件数量4
相数1
端子数量4
最高工作温度150 °C
最大输出电流10 A
封装主体材料PLASTIC/EPOXY
封装形状SQUARE
封装形式FLANGE MOUNT
认证状态Not Qualified
参考标准MIL-19500/469
最大重复峰值反向电压240 V
最大反向恢复时间2.5 µs
表面贴装NO
技术AVALANCHE
端子面层Nickel (Ni)
端子形式UNSPECIFIED
端子位置UPPER
Base Number Matches1

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469-01 – 469-05
Qualified Level:
JANTX and JANTXV
Available
Single Phase 10 Amp Rectifier Bridge
Qualified per MIL-PRF-19500/469
DESCRIPTION
This series of high-current single-phase bridge rectifiers are constructed with hermetically sealed
rectifiers built with the same design and construction techniques used in military applications for the
upmost in reliability. These include voidless glass encapsulation and internal "Category 1"
metallurgical bonds. They can be purchased screened and mil-qualified to MIL-PRF-19500/469,
making them ideal for applications where failure cannot be tolerated. These 10A rectifier bridges
are available in multiple working peak reverse voltage ratings per leg.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Voidless hermetically sealed glass packages used internally for each leg
Electrically isolated aluminum case
Triple-layer passivation
Internal “Category
1”
metallurgical bonds
JANTX and JANTXV qualifications available per MIL-PRF-19500/469
(See
part nomenclature
for all available options)
RoHS compliant versions available without Sn/Pb solder dip
MD Package
APPLICATIONS / BENEFITS
Controlled avalanche characteristics
Working peak reverse voltages 200 to 1,000 volts
Military and other high-reliability applications
High forward surge current capability
Low thermal resistance
Extremely robust construction
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
@ T
A
= 25 ºC unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
Working Peak Reverse Voltage (per leg)
Symbol
T
J
&
T
STG
R
ӨJC
R
ӨJA
V
RWM
Value
-65 to +150
5
25
200
400
600
800
1,000
10
6
100
2800
260
Unit
ºC
ºC/W
ºC/W
V (pk)
483-01
483-02
483-03
483-04
483-05
Maximum Average DC Output Current @ T
C
= +55 ºC
Maximum Average DC Output Current @ T
C
= +100 ºC
Forward Surge Current @ I
O
= I
O1
, T
C
= +55 ºC, tp = 8.3 ms
Isolation Voltage @ 10 µA DC Max for 10 secs @ 25°C
Solder Temperature @ 10 s
I
O1
(2)
I
O2
I
F(surge)
V
ISO
(1)
A
A
A (pk)
V
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Notes:
1. Derate from 10 A at T
C
= +55 ºC to 6 A at T
C
= +100 ºC (88 mA dc/ ºC).
2. Derate from 6 A at T
C
= +100 ºC to 0 A at T
C
= +150 ºC (120 mA dc/ ºC). t
rr
= 2.5 μs at I
F
= 0.5 A, I
R
=
1.0 A, I
rec
= 0.25 A.
RF01149, Rev. A (12/17/13)
©2013 Microsemi Corporation
Ph: 949-380-6100
sales.support@microsemi.com
Page 1 of 6
One Enterprise, Aliso Viejo, CA 92656

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