PD -95525A
IRG4PH50SPbF
I
NSULATED GATE BIPOLAR TRANSISTOR
Features
Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Lead-Free
C
Standard Speed IGBT
V
CES
=1200V
G
E
V
CE(on) typ.
= 1.47V
@V
GE
= 15V, I
C
= 33A
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
=25°
P
D
@ T
C
=100°
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
1200
57
33
114
114
± 20
± 30
270
200
80
-55 to + 150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Max.
Units
V
A
c
d
e
Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
V
mJ
W
°C
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Min.
—
—
—
—
Typ.
—
Max.
0.64
—
Units
°C/W
g (oz)
0.24
—
40
—
6.0(0.21)
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1
07/08/08
IRG4PH50SPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
1200 —
V
(BR)CES
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
18
—
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage —
1.22
— 1.47
Collector-to-Emitter Saturation Voltage
— 1.75
V
CE(ON)
— 1.55
V
GE(th)
Gate Threshold Voltage
3.0
—
DV
GE(th)
/DT
J
Temperature Coeff. of Threshold Voltage
—
-11
g
fe
Forward Transconductance
27
40
—
—
I
CES
Zero Gate Voltage Collector Current
—
—
—
—
I
GES
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 250µA
—
V
V
GE
= 0V, I
C
= 1.0 A
—
V/°C V
GE
= 0V, I
C
= 2.0 mA
1.7
I
C
= 33A
V
GE
= 15V
—
I
C
= 57A
See Fig.2, 5
V
—
I
C
= 33A , T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 250µA
—
S
V
CE
= 100V, I
C
= 33A
250
V
GE
= 0V, V
CE
= 1200V
µA
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
1000
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
167
25
55
32
29
845
425
1.80
19.6
21.4
32
30
1170
1000
37
13
3600
160
30
Max. Units
Conditions
251
I
C
= 33A
38
nC V
CC
= 400V
See Fig. 8
83
V
GE
= 15V
—
—
T
J
= 25°C
ns
1268
I
C
= 33A, V
CC
= 960V
638
V
GE
= 15V, R
G
= 5.0Ω
—
Energy losses include "tail"
—
mJ See Fig. 9, 10, 14
44
—
T
J
= 150°C,
—
I
C
= 33A, V
CC
= 960V
ns
—
V
GE
= 15V, R
G
= 5.0Ω
—
Energy losses include "tail"
—
mJ See Fig. 10,11,14
—
nH Measured 5mm from package
—
V
GE
= 0V
—
pF
V
CC
= 30V
See Fig. 7
—
ƒ = 1.0MHz
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
(See fig. 13a)
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 5.0Ω,
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
2
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IRG4PH50SPbF
For both:
Triangular wave:
60
Load Current (A)
Duty cycle: 50%
TJ = 125°C
Tsink= 90°C
Gate drive as specified
Power Dissipation = 40W
Clamp voltage:
80% of rated
40
Square wave:
60% of rated
voltage
20
Ideal diodes
0
0.1
1
A
10
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
1000
1000
T
J
= 25
°
C
100
T
J
= 150
°
C
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
100
T
J
= 150
°
C
10
10
T
J
= 25
°
C
1
0.0
V
GE
= 15V
80µs PULSE WIDTH
1.0
2.0
3.0
4.0
5.0
1
V
CC
= 50V
5µs PULSE WIDTH
5
6
7
8
9
10
11
12
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4PH50SPbF
60
2.5
50
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 66 A
Maximum DC Collector Current(A)
40
2.0
30
I
C
= 33 A
1.5
20
10
I
C
=16.5 A
0
25
50
75
100
125
150
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
Thermal Response (Z
thJC
)
0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PH50SPbF
7000
6000
Cies
V
GE
, Gate-to-Emitter Voltage (V)
100
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 33A
C, Capacitance (pF)
5000
4000
15
Coes
3000
2000
1000
0
10
Cres
5
1
10
0
0
25
50
75
100
125
150
175
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
25.0
Total Switching Losses (mJ)
24.0
Total Switching Losses (mJ)
V
CC
= 960V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 33A
1000
5
Ω
R
G
=
15Ω
5Ohm
V
GE
= 15V
V
CC
= 960V
100
I
C
=
66
A
I
C
=
33
A
I
C
=
16.5
A
23.0
10
22.0
21.0
0
10
20
30
40
50
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
, Gate Resistance
)
R
G
, Gate Resistance
( Ω
(Ohm)
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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