MUBW 35-12 A7
Converter - Brake - Inverter Module
(CBI2)
21
D11
1
D12
D13
2
D14
D15
7
3
D16
14
23
24
8
NTC
T7
22
D7
T1
16
15
6
T2
11
10
D2
12
D1
T3
18
17
T4
D3
T5
20
19
T6
13
D5
5
D4
4
D6
9
Three Phase
Rectifier
V
RRM
= 1600V
I
DAVM
= 44 A
I
FSM
= 400 A
Brake Chopper
V
CES
= 1200 V
I
C25
= 35 A
V
CE(sat)
= 2.3 V
Three Phase
Inverter
V
CES
= 1200 V
I
C25
= 50 A
V
CE(sat)
= 2.6 V
Application: AC motor drives with
●
Input Rectifier Bridge D11 - D16
Symbol
V
RRM
I
FAV
I
DAVM
I
FSM
P
tot
T
C
= 80°C; sine 180°
T
C
= 80°C; rectangular; d = 1/3
T
VJ
= 25°C; t = 10 ms; sine 50 Hz
T
C
= 25°C
Conditions
Maximum Ratings
1600
30
29
400
120
V
A
A
A
W
●
●
Input from single or three phase grid
Three phase synchronous or
asynchronous motor
electric braking operation
Features
●
●
●
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
1.4
1.4
2.0
1
1.7
0.2
V
V
mA
mA
µs
1.06 K/W
●
V
F
I
R
t
rr
R
thJC
I
F
= 35 A; T
VJ
= 25°C
T
VJ
= 125°C
V
R
= V
RRM
; T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 100 V; I
F
= 20 A; di/dt = -20 A/µs
(per diode)
●
●
High level of integration - only one power
semiconductor module required for the
whole drive
Fast rectifier diodes for enhanced EMC
behaviour
NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
ruggedness
Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1-8
419
MUBW 35-12 A7
Output Inverter T1 - T6
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
RBSOA
t
SC
(SCSOA)
P
tot
Conditions
T
VJ
= 25°C to 150°C
Continuous
Transient
T
C
= 25°C
T
C
= 80°C
V
GE
=
±
15 V; R
G
= 47
Ω;
T
VJ
= 125°C
Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
=
±
15 V; R
G
= 47
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Maximum Ratings
1200
±
20
±
30
50
35
I
CM
=
70
V
CEK
≤
V
CES
10
225
V
V
V
A
A
A
µs
W
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at T
J
= 125°C)
V
0
= 0.96 V; R
0
= 13 m
Ω
T1 - T6 / D1 - D6
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 1.13 V; R
0
= 50 m
Ω
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.26V; R
0
= 15 m
Ω
T7 / D7
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 1.37 V; R
0
= 62 m
Ω
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.39 V; R
0
= 56 m
Ω
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.6
2.9
4.5
1
200
100
70
500
70
5.3
3.9
1650
120
3.1
6.5
1.1
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
0.55 K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 35 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
Thermal Response
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 35 A
V
GE
= ±15 V; R
G
= 47
Ω
D11 - D16
Rectifier Diode (typ.)
C
th1
= 0.131 J/K; R
th1
= 0.851 K/W
C
th2
= 0.839 J/K; R
th2
= 0.209 K/W
T1 - T6 / D1 - D6
IGBT (typ.)
C
th1
= 0.201 J/K; R
th1
= 0.419 K/W
C
th2
= 1.25 J/K; R
th2
= 0.131 K/W
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600V; V
GE
= 15 V; I
C
= 35 A
(per IGBT)
Output Inverter D1 - D6
Symbol
I
F25
I
F80
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
50
33
A
A
Free Wheeling Diode (typ.)
C
th1
= 0.116 J/K; R
th1
= 0.973 K/W
C
th2
= 0.879 J/K; R
th2
= 0.217 K/W
T7 / D7
Symbol
V
F
I
RM
t
rr
R
thJC
Conditions
I
F
= 35 A; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 30 A; di
F
/dt = -500 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
(per diode)
Characteristic Values
min.
typ. max.
2.8
1.8
27
150
V
V
A
ns
1.19 K/W
IGBT (typ.)
C
th1
= 0.156 J/K; R
th1
= 0.545 K/W
C
th2
= 1.162 J/K; R
th2
= 0.155 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.043 J/K; R
th1
= 2.738 K/W
C
th2
= 0.54 J/K; R
th2
= 0.462 K/W
2-8
© 2004 IXYS All rights reserved
419
MUBW 35-12 A7
Brake Chopper T7
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
RBSOA
t
SC
(SCSOA)
P
tot
Symbol
Conditions
T
VJ
= 25°C to 150°C
Continuous
Transient
T
C
= 25°C
T
C
= 80°C
V
GE
=
±
15 V; R
G
= 82
Ω;
T
VJ
= 125°C
Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
=
±
15 V; R
G
= 82
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
Maximum Ratings
1200
±
20
±
30
35
25
I
CM
=
35
V
CEK
≤
V
CES
10
180
V
V
V
A
A
A
µs
W
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.3
2.6
4.5
0.8
200
100
75
500
70
3.1
2.4
1000
70
3
6.5
0.8
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
0.7 K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 20 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 0.6 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 20 A
V
GE
= ±15 V; R
G
= 82
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MH z
V
CE
= 600V; V
GE
= 15 V; I
C
= 20 A
Brake Chopper D7
Symbol
V
RRM
I
F25
I
F80
Symbol
V
F
I
R
I
RM
t
rr
R
thJC
© 2004 IXYS All rights reserved
Conditions
T
VJ
= 25°C to 150°C
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 20 A; T
VJ
= 25°C
T
VJ
= 125°C
V
R
= V
RRM
; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 20 A; di
F
/dt = -400 A/µs; T
VJ
= 125°C
V
R
= 600 V
Maximum Ratings
1200
16
11
V
A
A
Characteristic Values
min.
typ. max.
3.6
2.6
0.06
0.07
13
110
V
V
mA
mA
A
ns
419
3.2 K/W
3-8
MUBW 35-12 A7
Temperature Sensor NTC
Symbol
R
25
B
25/50
Module
Symbol
T
VJ
T
JM
T
stg
V
ISOL
M
d
Symbol
R
pin-chip
d
S
d
A
R
thCH
Weight
Dimensions in mm (1 mm = 0.0394")
Creepage distance on surface
Strike distance in air
with heatsink compound
6
6
0.02
180
Conditions
Operating
Maximum Ratings
-40...+125
150
-40...+125
2500
2.7 - 3.3
°C
°C
°C
V~
Nm
Conditions
T = 25°C
Characteristic Values
min.
typ. max.
4.75
5.0
3375
5.25 kΩ
K
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M5)
Conditions
Characteristic Values
min.
typ. max.
5
mΩ
mm
mm
K/W
g
4-8
© 2004 IXYS All rights reserved
419
MUBW 35-12 A7
Input Rectifier Bridge D11 - D16
120
A
100
I
F
80
T
VJ
= 125°C
T
VJ
= 25°C
60
80
40
40
T
VJ
= 125°C
120
200
A
160
I
FSM
T
VJ
= 45°C
50Hz, 80% V
RRM
10
3
As
I
2
t
T
VJ
= 125°C
2
T
VJ
= 45°C
20
0
0.0
0.5
1.0
1.5
V
F
2.0 V
2.5
0
0.001
10
2
0.01
0.1
t
s
1
1
2
3
4 5 6 7 8 910
ms
t
Fig. 1 Forward current versus voltage
drop per diode
800
W
600
P
tot
Fig. 2 Surge overload current
Fig. 3 I
2
t versus time per diode
100
A
80
I
d(AV)
60
400
R
thA
:
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W
1 K/W
2 K/W
5 K/W
40
200
20
0
0
40
80
120
I
d(AV)M
A
0
20
40
60
80 100 120 140 °C
T
amb
0
0
20 40 60 80 100 120 140 °C
T
C
Fig. 4
1.2
K/W
1.0
Z
thJC
0.8
Power dissipation versus direct output current and ambient temperature, sin 180°
Fig. 5 Max. forward current versus
case temperature
0.6
0.4
0.2
DWFN21-16
0.0
0.001
0.01
0.1
1
t
s
10
419
Fig. 6 Transient thermal impedance junction to case
© 2004 IXYS All rights reserved
5-8
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