NTB6412AN, NTP6412AN,
NVB6412AN
N-Channel Power MOSFET
100 V, 58 A, 18.2 mW
Features
•
•
•
•
Low R
DS(on)
High Current Capability
100% Avalanche Tested
NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C Unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain Cur-
rent R
qJC
Power Dissipation
R
qJC
Pulsed Drain Current
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
T
J
, T
stg
I
S
E
AS
Symbol
V
DSS
V
GS
I
D
Value
100
$20
58
41
167
240
−55 to
+175
58
300
W
A
°C
A
mJ
Unit
V
V
A
www.onsemi.com
I
D
MAX
(Note 1)
58 A
V
(BR)DSS
100 V
R
DS(ON)
MAX
18.2 mW @ 10 V
N−Channel
D
G
S
4
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
3
D
2
PAK
CASE 418B
STYLE 2
t
p
= 10
ms
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 Vdc, V
GS
= 10 Vdc,
I
L(pk)
= 44.7 A, L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
1
2
T
L
260
°C
4
Drain
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain) Steady State
Junction−to−Ambient (Note 1)
Symbol
R
qJC
R
qJA
Max
0.9
33
Unit
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
NTP
6412ANG
AYWW
1
Gate
2
Drain
3
Source
1
Gate
NTB
6412ANG
AYWW
2
Drain
3
Source
6412AN = Specific Device Code
G
= Pb−Free Device
A
= Assembly Location
Y
= Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 2
Publication Order Number:
NTB6412AN/D
NTB6412AN, NTP6412AN, NVB6412AN
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C Unless otherwise specified)
Characteristics
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temper-
ature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
V
GS
= 0 V,
V
DS
= 100 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
100
103
1.0
100
$100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On−Resistance
I
GSS
V
DS
= 0 V, V
GS
=
$20
V
V
GS(th)
V
GS(th)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
2.0
9.2
4.0
V
mV/°C
V
GS
= 10 V, I
D
= 58 A
V
GS
= 10 V, I
D
= 20 A
16.8
15.6
31
18.2
18.2
mW
Forward Transconductance
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
g
FS
V
DS
= 5 V, I
D
= 20 A
S
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
R
G
V
GS
= 10 V, V
DS
= 80 V,
I
D
= 58 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
2700
400
150
73
2.5
13.5
35
5.6
2.2
3500
500
pF
100
nC
V
W
SWITCHING CHARACTERISTICS, V
GS
= 10 V
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
I
S
= 58 A
T
J
= 25°C
T
J
= 125°C
0.96
0.89
85
V
GS
= 0 V, I
S
= 58 A,
dI
SD
/dt = 100 A/ms
60
25
270
nC
ns
1.3
V
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10 V, V
DD
= 80 V,
I
D
= 58 A, R
G
= 6.2
W
16
140
70
126
ns
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
rr
t
a
t
b
Q
RR
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NTB6412AN, NTP6412AN, NVB6412AN
120
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
100
10 V
80
60
40
20
V
GS
= 4.4 V
0
0
0
1
2
3
4
5
2
3
4
5
6
7
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
5.4 V
5.0 V
6.0 V
7.5 V
6.5 V
I
D
, DRAIN CURRENT (A)
120
100
80
60
40
20
T
J
= −55°C
T
J
= 125°C
T
J
= 25°C
V
DS
w
10 V
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.04
I
D
= 58 A
T
J
= 25°C
0.06
V
GS
= 10 V
0.05
T
J
= 175°C
0.04
T
J
= 125°C
0.03
0.02
0.01
0
10
0.03
0.02
T
J
= 25°C
T
J
= −55°C
0.01
5
6
7
8
9
10
20
30
40
50
60
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Region versus Gate Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
100000
3
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
D
= 58 A
V
GS
= 10 V
V
GS
= 0 V
2.5
I
DSS
, LEAKAGE (nA)
10000
2
T
J
= 150°C
1.5
1000
T
J
= 125°C
1
0.5
−50
100
−25
0
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
90 100
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
www.onsemi.com
3
NTB6412AN, NTP6412AN, NVB6412AN
T
J
= 25°C
V
GS
= 0 V
C, CAPACITANCE (pF)
4000
Q
T
8
V
DS
6
Q
gs
Q
gd
V
GS
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
5000
10
80
3000
C
iss
2000
60
4
40
1000
C
rss
0
C
oss
10 20 30 40 50 60 70 80 90
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
2
0
0
0
10
V
DS
= 80 V
I
D
= 58 A
T
J
= 25°C
20
30
40
50
60
Q
g
, TOTAL GATE CHARGE (nC)
70
20
0
100
Figure 7. Capacitance Variation
1000
V
DS
= 80 V
I
D
= 58 A
V
GS
= 10 V
t, TIME (ns)
100
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
60
50
40
30
20
10
0
T
J
= 25°C
V
GS
= 0 V
t
f
t
r
t
d(off)
10
t
d(on)
1
1
10
R
G
, GATE RESISTANCE (W)
100
I
S
, SOURCE CURRENT (A)
0.5
0.6
0.7
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
1.0
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
1000
AVALANCHE ENERGY (mJ)
300
I
D
= 44.7 A
I
D
, DRAIN CURRENT (A)
100
10
ms
100
ms
200
10
1 ms
10 ms
dc
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
100
1
0.1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1000
0
25
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE
175
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
www.onsemi.com
4
NTB6412AN, NTP6412AN, NVB6412AN
1
D = 0.5
0.2
0.1
R(t) (°C/W)
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
1
10
100
1000
Figure 13. Thermal Response
ORDERING INFORMATION
Device
NTB6412ANG
NTB6412ANT4G
NTP6412ANG
NVB6412ANT4G
Package
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
TO−220
(Pb−Free)
D
2
PAK
(Pb−Free)
Shipping
†
50 Units / Rail
800 / Tape & Reel
50 Units / Rail
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
