1N5615 thru 1N5623
VOIDLESS-HERMETICALLY SEALED
FAST RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/429
and is ideal for high-reliability applications where a failure cannot be tolerated.
These industry-recognized 1.0 Amp rated rectifiers for working peak reverse
voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in surface mount MELF package configurations by adding a “US”
suffix (see separate data sheet for 1N5615US thru 1N5623US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including fast and ultrafast device
types in both through-hole and surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
“A” Package
FEATURES
•
•
•
•
•
•
Popular JEDEC registered 1N5615 to 1N5623 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category
I”
Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts.
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/429
•
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N5615US thru 1N5623US)
•
•
•
•
•
•
•
•
APPLICATIONS / BENEFITS
Fast recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
•
•
•
•
•
•
Junction & Storage Temperature: -65
o
C to +175
o
C
Thermal Resistance: 38
o
C/W junction to lead at 3/8
inch (10 mm) lead length from body
o
Thermal Impedance: 4.5 C/W @ 10 ms heating time
Average Rectified Forward Current (I
O
): 1.0 Amps @
T
A
= 55ºC
Forward Surge Current: 30 Amps @ 8.3 ms half-sine
Solder Temperatures: 260ºC for 10 s (maximum)
•
•
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs (package dimensions on last page)
TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver axial-leads and no finish.
MARKING: Body paint and part number, etc.
POLARITY: Cathode band
TAPE & REEL option: Standard per EIA-296
WEIGHT: 340 mg
REVERSE
CURRENT
(MAX.)
I
R
@ V
RWM
μA
o
25 C 100 C
.5
25
.5
25
.5
25
.5
25
.5
25
o
•
•
•
•
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
VOLTS
200
400
600
800
1000
MINIMUM
BREAKDOWN
VOLTAGE
V
BR
@ 50μA
VOLTS
220
440
660
880
1100
AVERAGE
RECTIFIED
CURRENT
I
O
@ T
A
(NOTE 1)
AMPS
o
o
50 C 100 C
1.00
.750
1.00
.750
1.00
.750
1.00
.750
1.00
.750
FORWAR
D
VOLTAGE
(MAX.)
V
F
@ 3A
VOLTS
.8 MIN.
CAPACITANCE
(MAX.)
C @ V
R
=
12 V
f=1 MHz
pF
45
35
25
20
15
MAXIMUM
SURGE
CURRENT
I
FSM
(NOTE 2)
AMPS
25
25
25
25
25
REVERSE
RECOVERY
(MAX.)
(NOTE 3)
t
rr
ns
150
150
250
300
500
1N5615 – 1N5623
1N5615
1N5617
1N5619
1N5621
1N5623
1.6
MAX.
NOTE 1:
From 1 Amp at T
A
= 55
o
C, derate linearly at 5.56 mA/
o
C to 0.75 Amp at T
A
= 100
o
C. From T
A
= 100
o
C,
derate linearly at 7.5 mA/
o
C to 0 Amps at T
A
= 200
o
C. These ambient ratings are for PC boards where thermal
o
resistance from mounting point to ambient is sufficiently controlled where T
J(max)
does not exceed 175 C.
NOTE 2:
T
A
= 100
o
C, f = 60 Hz, I
O
= 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3:
I
F
= 0.5 A, I
RM
= 1 A, I
R(REC)
= 0.250 A
Copyright
©
2007
1-15-2007 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N5615 thru 1N5623
VOIDLESS-HERMETICALLY SEALED
FAST RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
WWW .
Microsemi
.C
OM
Symbol
V
BR
V
RWM
I
O
V
F
I
R
C
t
rr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range
Average Rectified Output Current: Output Current averaged over a full cycle with a 50 hZ or 60 Hz sine-wave
input and a 180 degree conduction angle
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified decay point after a peak reverse
current occurs.
GRAPHS
FIGURE 1
MAXIMUM CURRENT vs LEAD TEMPERATURE
FIGURE 2
TYPICAL REVERSE CURRENT vs PIV
1N5615 – 1N5623
Copyright
©
2007
1-15-2007 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
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