NTST30120CT,
NTSJ30120CTG,
NTSB30120CT-1G,
NTSB30120CTG,
NTSB30120CTT4G
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low V
F
= 0.50 V at I
F
= 5 A
Features
www.onsemi.com
VERY LOW FORWARD VOLT-
AGE, LOW LEAKAGE SCHOT-
TKY BARRIER
RECTIFIERS 30 AMPERES,
120 VOLTS
PIN CONNECTIONS
1
2, 4
3
4
•
Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
These are Pb−Free Devices
4
Typical Applications
•
Switching Power Supplies including Notebook / Netbook Adapters,
•
•
•
•
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
1
2
TO−220AB
CASE 221A
STYLE 6
12
3
I2PAK
CASE 418D
STYLE 3
3
4
Mechanical Characteristics
•
Case: Epoxy, Molded
•
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
1
2
3
TO−220FP
CASE 221AH
D2PAK
CASE 418B
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
July, 2016 − Rev. 6
Publication Order Number:
NTST30120CT/D
NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG,
NTSB30120CTT4G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
, T
C
= 125°C)
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz, T
C
= 130°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature
Storage Temperature
Voltage Rate of Change (Rated V
R
)
Per device
Per diode
I
FRM
Per device
Per diode
I
FSM
T
J
T
stg
dv/dt
60
30
150
−40 to +150
−40 to +150
10,000
A
°C
°C
V/ms
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
30
15
A
Value
120
Unit
V
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance per Diode
Junction−to−Case
Junction−to−Ambient
Symbol
R
qJC
R
qJA
NTST30120CTG
NTSB30120CT−1G
2.5
70
NTSB30120CTG
1.14
46.6
NTSJ30120CTG
4.05
105
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(Per Leg unless otherwise noted)
Rating
Maximum Instantaneous Forward Voltage (Note 1)
(I
F
= 5 A, T
J
= 25°C)
(I
F
= 7.5 A, T
J
= 25°C)
(I
F
= 15 A, T
J
= 25°C)
(I
F
= 5 A, T
J
= 125°C)
(I
F
= 7.5 A, T
J
= 125°C)
(I
F
= 15 A, T
J
= 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(V
R
= 90 V, T
J
= 25°C)
(V
R
= 90 V, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
16
11
−
25
−
−
800
100
Symbol
v
F
0.56
0.71
0.90
0.50
0.60
0.68
−
−
1.08
−
−
0.76
mA
mA
mA
mA
Typ
Max
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
v
2.0%
www.onsemi.com
2
NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG,
NTSB30120CTT4G
TYPICAL CHARACTERISITICS
I R , INSTANTANEOUS REVERSE CURRENT (mA)
i F , INSTANTANEOUS FORWARD CURRENT (A)
100
T
A
= 150°C
10
T
A
= 125°C
100
T
A
= 150°C
10
T
A
= 125°C
1.0
T
A
= 25°C
0.1
1.0
0.01
T
A
= 25°C
0.1
0.001
20
40
60
80
30
50
70
90 100 110
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
120
0
1.4
1.6
0.2
0.4
0.6
0.8
1.0
1.2
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
1.8
Figure 1. Typical Instantaneous Forward
Characteristics
10000
C
J
, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
30
Figure 2. Typical Reverse Current
Characteristics
R
qJC
= 1.3°C/W
25
20
15
10
5
0
0
20
40
60
80
100
120
T
C
, CASE TEMPERATURE (°C)
140
SQUARE WAVE
dc
1000
100
10
0.1
1
10
V
R
, REVERSE VOLTAGE (V)
100
Figure 3. Typical Junction Capacitance
Figure 4. Current Derating per Leg
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
60
P
F(AV)
, AVERAGE FORWARD POW-
ER DISSIPATION (W)
55
50
45
40
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
T
C
, CASE TEMPERATURE (°C)
140
SQUARE WAVE
R
qJC
= 1.3°C/W
dc
30
I
PK
/I
AV
= 20
25
20
15
10
5
0
0
2
4
6
8
10
12
14
T
J
= 150°C
16
18
20
dc
I
PK
/I
AV
= 10
I
PK
/I
AV
= 5
SQUARE
WAVE
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
www.onsemi.com
3
NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG,
NTSB30120CTT4G
TYPICAL CHARACTERISITICS
10
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
1
50% Duty Cycle
20%
10%
0.1
5%
2%
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
t, Pulse Time (sec)
1
10
100
1000
1%
0.01
0.000001
Figure 7. Typical Transient Thermal Response for NTST30120CT and NTSB30120CT−1G
10
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
50% Duty Cycle
1
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, Pulse Time (sec)
Figure 8. Typical Transient Thermal Response for NTSJ30120CTG
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
1
50% Duty Cycle
0.1 20%
10%
5%
2%
1%
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
t, Pulse Time (sec)
1
10
100
1000
0.01
0.000001
Figure 9. Typical Transient Thermal Response for NTSB30120CTG
www.onsemi.com
4
NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG,
NTSB30120CTT4G
ORDERING INFORMATION
Device
NTST30120CTG
NTSJ30120CTG
NTSB30120CT−1G
NTSB30120CTG
NTSB30120CTT4G
Package
TO−220AB
(Pb−Free)
TO−220FP
(Halide−Free)
I
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
Shipping
†
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
AYWW
TS30120Cx
AKA
AYWW
TS30120CG
AKA
AYWW
TS30120CG
AKA
AYWW
TS30120CG
AKA
TO−220AB
TO−220FP
A
Y
WW
AKA
x
G
H
I
2
PAK
= Assembly Location
= Year
= Work Week
= Polarity Designator
= G or H
= Pb−Free Package
= Halide−Free Package
D
2
PAK
www.onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
