电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

NSVMMBD352WT1G

产品描述Schottky Diodes u0026 Rectifiers SS SHKY DIO 7V TR
产品类别分立半导体    二极管   
文件大小114KB,共3页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 全文预览

NSVMMBD352WT1G在线购买

供应商 器件名称 价格 最低购买 库存  
NSVMMBD352WT1G - - 点击查看 点击购买

NSVMMBD352WT1G概述

Schottky Diodes u0026 Rectifiers SS SHKY DIO 7V TR

NSVMMBD352WT1G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
针数3
制造商包装代码419-04
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time4 weeks
Samacsys DescriptionSchottky Diodes & Rectifiers SS SHKY DIO 7V TR
二极管元件材料SILICON
二极管类型MIXER DIODE
JESD-609代码e3
湿度敏感等级1
最高工作温度150 °C
峰值回流温度(摄氏度)NOT SPECIFIED
表面贴装YES
端子面层Tin (Sn)
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

下载PDF文档
MMBD352WT1G,
NSVMMBD352WT1G
Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications
but are suitable also for use in detector and ultra−fast switching
circuits.
Features
http://onsemi.com
Very Low Capacitance
Less Than 1.0 pF @ 0 V
Low Forward Voltage
0.5 V (Typ) @ I
F
= 10 mA
AEC Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Symbol
V
R
Value
7.0
Unit
V
CC
SOT−323 (SC−70)
CASE 419
STYLE 9
1
ANODE
2
CATHODE
3
CATHODE/ANODE
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
M5 MG
G
1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1)
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2)
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
200
1.6
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55
to +150
mW
mW/C
C/W
C
625
mW
mW/C
C/W
Max
Unit
M5
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MMBD352WT1G
NSVMMBD352WT1G
Package
SOT−323
(Pb−Free)
SOT−323
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
1. FR−5 = 1.0

0.75

0.062 in.
2. Alumina = 0.4

0.3

0.024 in. 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011
Rev. 5
1
Publication Order Number:
MMBD352WT1/D

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 953  1115  840  4  606  1  23  2  21  22 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved