BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
NPN Silicon
Features
http://onsemi.com
•
AEC−Q101 Qualified and PPAP Capable
•
S Prefix for Automotive and Other Applications Requiring Unique
COLLECTOR
3
1
BASE
2
EMITTER
Site and Control Change Requirements
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
Collector Current
−
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
1
2
3
SOT−23
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
Unit
mW
mW/°C
°C/W
1
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55
to +150
mW
mW/°C
°C/W
°C
6x
M
G
= Device Code
x = A, B, or C
= Date Code*
= Pb−Free Package
MARKING DIAGRAM
R
qJA
6x M
G
G
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 12
1
Publication Order Number:
BC817−16LT1/D
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
= 10 mA)
Collector
−Emitter
Breakdown Voltage
(V
EB
= 0, I
C
= 10
mA)
Emitter
−Base
Breakdown Voltage
(I
E
= 1.0
mA)
Collector Cutoff Current
(V
CB
= 20 V)
(V
CB
= 20 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mA, V
CE
= 1.0 V)
(I
C
= 500 mA, V
CE
= 1.0 V)
Collector
−Emitter
Saturation Voltage
(I
C
= 500 mA, I
B
= 50 mA)
Base
−Emitter
On Voltage
(I
C
= 500 mA, V
CE
= 1.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 V, f = 1.0 MHz)
f
T
C
obo
100
−
−
10
−
−
MHz
pF
BC817−16, SBC817−16
BC817−25, SBC817−25
BC817−40, SBC817−40
h
FE
100
160
250
40
−
−
−
−
−
−
−
−
250
400
600
−
0.7
1.2
−
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
45
50
5.0
−
−
−
−
−
−
V
V
V
Symbol
Min
Typ
Max
Unit
−
−
−
−
100
5.0
nA
mA
V
CE(sat)
V
BE(on)
V
V
ORDERING INFORMATION
Device
BC817−16LT1G
BC817−16LT3G
SBC817−16LT3
BC817−25LT1G
SBC817−25LT1G
BC817−25LT3G
SBC817−25LT3G
BC817−40LT1G
SBC817−40LT1G
BC817−40LT3G
SBC817−40LT3G
6C
SOT−23
(Pb−Free)
10,000 / Tape & Reel
6B
SOT−23
(Pb−Free)
10,000 / Tape & Reel
6A
SOT−23
(Pb−Free)
Specific Marking
Package
Shipping
†
3000 / Tape & Reel
10,000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
TYPICAL CHARACTERISTICS
−
BC817−16L, SBC817−16L
300
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
150°C
h
FE
, DC CURRENT GAIN
V
CE
= 1 V
1
I
C
/I
B
= 10
200
25°C
150°C
25°C
0.1
−55°C
100
−55°C
0
0.001
0.01
0.1
1
0.01
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.1
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
150°C
I
C
/I
B
= 10
−55°C
25°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5 V
−55°C
25°C
150°C
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
http://onsemi.com
3
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
TYPICAL CHARACTERISTICS
−
BC817−16L, SBC817−16L
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+1
q
VC
for V
CE(sat)
0
0.6
I
C
= 10 mA
100 mA
300 mA
500 mA
-1
0.4
0.2
0
0.01
-2
q
VB
for V
BE
0.1
1
I
B
, BASE CURRENT (mA)
10
100
1
10
100
I
C
, COLLECTOR CURRENT (mA)
1000
Figure 5. Saturation Region
Figure 6. Temperature Coefficients
100
C, CAPACITANCE (pF)
C
ib
10
C
ob
1
0.1
10
1
V
R
, REVERSE VOLTAGE (VOLTS)
100
Figure 7. Capacitances
http://onsemi.com
4
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
TYPICAL CHARACTERISTICS
−
BC817−25L, SBC817−25L
500
150°C
h
FE
, DC CURRENT GAIN
400
300
200
−55°C
100
0
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 1 V
1
I
C
/I
B
= 10
150°C
25°C
0.1
−55°C
25°C
0.001
0.01
0.1
1
0.01
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 8. DC Current Gain vs. Collector
Current
−55°C
25°C
150°C
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.1
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
I
C
/I
B
= 10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5 V
−55°C
25°C
150°C
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
1000
f
T
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
V
CE
= 1 V
T
A
= 25°C
Figure 11. Base Emitter Voltage vs. Collector
Current
100
10
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
http://onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
