MWI100-12T8T
Six-Pack
Trench IGBT
V
CES
I
C25
= 1200 V
= 145 A
1.7 V
V
CE(sat)
=
Part name
30, 31, 32
1
19
2
27
29
5
6
24
25
26
9
10
21
22
23
E72873
Pin configuration see outlines.
20
3
4
33, 34, 35
7
11
12
13, 14, 15
Features:
Application:
Package:
IXYS reserves the right to change limits, test conditions and dimensions.
20150123d
© 2015 IXYS All rights reserved
1-7
MWI100-12T8T
Ouput Inverter T1 - T6
Ratings
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
RBSOA
SCSOA
t
SC
I
SC
R
thJC
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
Conditions
T
VJ
continuous
transient
T
T
T
I = 100 A; V
I = 4 mA; V
V
V
V
V
=V
;V
= 15 V
=V
=0V
T
VJ
T
VJ
T
VJ
T
VJ
T
VJ
min.
typ.
max.
1200
±20
±30
145
100
Unit
V
V
V
A
A
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
1.7
2.0
5.0
1
2.1
6.5
4
500
V
V
V
mA
mA
nA
= ±20 V
= 25 V; V
= 600 V; V
= 15 V; I = 100 A
7210
550
270
50
400
340
13.5
inductive load
V = 600 V; I = 100 A
V
G
= 3.9
Ω
V
= 3.9
Ω;
V
V
= 900 V; V
= 3.9
Ω
G
= ±15 V;
T
VJ
ns
ns
ns
ns
mJ
mJ
200
10
A
μs
A
G
T
VJ
= 1200 V
T
VJ
400
0.26
Output Inverter D1 - D6
Ratings
Symbol
V
RRM
I
F25
I
F80
V
F
Q
rr
I
RM
t
rr
E
rec
R
thJC
Definitions
max. repetitve reverse voltage
forward current
forward voltage
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
T
Conditions
T
VJ
T
T
I
F
= 100 A; V
=0V
T
VJ
T
VJ
T
VJ
min.
typ.
max.
1200
135
90
Unit
V
A
A
V
V
A
ns
mJ
1.95
1.95
12.5
100
350
4
2.2
V = 600 V
di
F
/dt = -1600 A/μs
I
F
= 100 A; V = 0 V
0.4
IXYS reserves the right to change limits, test conditions and dimensions.
20150123d
© 2015 IXYS All rights reserved
2-7
MWI100-12T8T
Temperature Sensor NTC
Symbol
R
25
B
25/50
Definitions
resistance
Conditions
T
min.
4.75
Ratings
typ. max.
5.0
5.25
3375
Unit
Ω
K
Module
Symbol
T
VJ
T
VJM
T
stg
V
ISOL
CTI
M
d
d
S
d
A
R
pin-chip
R
thCH
Weight
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting torque (M5)
creep distance on surface
strike distance through air
resistance pin to chip
thermal resistance case to heatsink
Conditions
min.
-40
-40
Ratings
typ. max.
125
150
125
2500
200
Unit
I
<
2.7
10
7.5
2.5
0.02
300
V~
Nm
mm
mm
m
g
3.3
0.0 Equivalent Circuits for Simulation
I
V
0
R
0
Ratings
Conditions
T1 - T6
D1 - D6
T
VJ
T
VJ
min.
typ.
1.0
9.1
1.09
9.1
max.
Unit
V
mΩ
V
mΩ
Symbol
V
0
R
0
V
0
R
0
R1
C1
Definitions
IGBT
Diode
R2
C2
R3
C3
R4
C4
IGBT
R
1
R
2
R
3
R
4
Diode
0.069
0.146
0.101
τ
1
τ
2
τ
3
τ
4
T
0.0025
0.076
0.036
0.076
0.0025
0.076
0.036
0.076
IXYS reserves the right to change limits, test conditions and dimensions.
20150123d
© 2015 IXYS All rights reserved
3-7
MWI100-12T8T
Circuit Diagram
30, 31, 32
Marking on Product
1
19
2
27
29
5
6
24
25
26
9
10
21
22
23
Logo
UL
2D Data Matrix
XXX XX-XXXXX
Part number
YYWWx
Date Code Location
20
3
4
33, 34, 35
7
11
12
13, 14, 15
Outline Drawing
Product Marking
Ordering
Standard
Part Name
Marking on Product
Delivering Mode Base Qty Ordering Code
Box
5
502294
IXYS reserves the right to change limits, test conditions and dimensions.
20150123d
© 2015 IXYS All rights reserved
4-7
MWI100-12T8T
Inverter T1 - T6
200
V
GE
= 15 V
160
T
VJ
= 25°C
T
VJ
= 125°C
160
200
V
GE
= 13 V
15 V
17 V
19 V
11 V
I
C
[A]
120
I
C
[A]
120
T
VJ
= 125°C
80
80
9V
40
40
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
1
2
3
4
5
V
CE
[V]
Fig. 1 Typ. output characteristics
V
CE
[V]
Fig. 2 output characteristics
200
T
VJ
= 25°C
T
VJ
= 125°C
20
I
C
= 100 A
V
CE
= 600 V
16
160
I
C
[A]
120
V
GE
[V]
12
80
8
40
4
0
5
6
7
8
9
10
11
12
13
0
0
100
200
300
400
500
600
700
800
V
GE
[V]
Fig. 3 Typ. transfer characteristics
Q
G
[nC]
Fig. 4 Typ. turn-on gate charge
28
24
20
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 3.9
T
VJ
= 125°C
E
off
24
20
E
on
E
16
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 100 A
T
VJ
= 125°C
on
E
16
Eoff
E
12
[mJ]
12
8
4
0
0
40
80
120
160
200
E
rec
mJ
8
4
0
0
5
10
15
20
25
30
35
Erec
I
C
[A]
Fig. 5 Typ. switching energy vs. collector current
IXYS reserves the right to change limits, test conditions and dimensions.
R
G
[ ]
Fig. 6 Typ. switching energy vs. gate resistance
20150123d
© 2015 IXYS All rights reserved
5-7
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