Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
AUTOMOTIVE GRADE
AUIRF7319Q
N-CHANNEL MOSFET
1
8
2
7
S1
G1
S2
G2
N-CH
D1
D1
D2
D2
P-CH
3
4
6
5
P-CHANNEL MOSFET
Top View
V
DSS
30V
-30V
R
DS(on)
typ. 0.023 0.042
max. 0.029 0.058
I
D
6.5A
-4.9A
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
SO-8
AUIRF7319Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF7319Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7319QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
I
S
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
I
AR
E
AR
V
GS
dv/dt
T
J
T
STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
N-Channel
P-Channel
30
6.5
5.2
30
2.5
2.0
1.3
82
4.0
0.20
± 20
5.0
-5.0
-55 to + 150
-30
-4.9
Units
V
A
-3.9
-30
-2.5
W
140
-2.8
mJ
A
mJ
V
V/ns
°C
Thermal Resistance
Symbol
R
JA
Parameter
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
Max.
62.5
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-9-30
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
V
(BR)DSS
/T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
R
DS(on)
Static Drain-to-Source On-Resistance
P-Ch
V
GS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
AUIRF7319Q
Min.
30
-30
–––
–––
–––
–––
–––
–––
1.0
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.022
-0.022
0.023
0.032
0.042
0.076
–––
–––
14
7.7
–––
–––
–––
–––
–––
–––
22
23
2.6
3.8
6.4
5.9
8.1
13
8.9
13
26
34
17
32
650
710
320
380
130
180
Max. Units
–––
–––
–––
–––
0.029
0.046
0.058
0.098
3.0
-3.0
–––
–––
1.0
-1.0
25
-25
±
100
Conditions
I
DSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
I
GSS
±
100
33
34
3.9
5.7
9.6
8.9
12
19
13
20
39
51
26
48
–––
–––
–––
–––
–––
–––
V
GS
= 0V, I
D
= 250µA
V
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= 1mA
V/°C
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 4.7A
V
GS
= -10V, I
D
= -4.9A
V
GS
= -4.5V, I
D
= -3.6A
V
DS
= V
GS
, I
D
= 250µA
V
V
DS
= V
GS
, I
D
= -250µA
V
DS
= 15V, I
D
= 5.8A
S
V
DS
= -15V, I
D
= -4.9A
V
DS
=24V, V
GS
= 0V
V
DS
= -24V,V
GS
= 0V
µA
V
DS
=24V, V
GS
= 0V ,T
J
= 55°C
V
DS
= -24V,V
GS
= 0V,T
J
= 55°C
V
GS
=
±
20V
nA
V
GS
=
±
20V
N-Channel
I
D
= 5.8A, V
DS
= 15V,V
GS
= 10V
nC
P-Channel
I
D
= -4.9A,V
DS
= -15V,V
GS
= -10V
N-Channel
V
DD
= 15V,I
D
= 1.0A,R
G
= 6.0
R
D
= 15
ns
P-Channel
V
DD
= -15V,I
D
= -1.0A,R
G
= 6.0
R
D
= 15
N-Channel
V
GS
= 0V,V
DS
= 25V,ƒ = 1.0MHz
pF
P-Channel
V
GS
= 0V,V
DS
= -25V,ƒ = 1.0MHz
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Min.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
0.78
-0.78
45
44
58
42
Max. Units
2.5
-2.5
30
-30
1.0
-1.0
68
66
87
63
A
Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
ns
nC
T
J
= 25°C,I
S
= 1.7A,V
GS
= 0V
T
J
= 25°C,I
S
= -1.7A,V
GS
= 0V
N-Channel
T
J
= 25°C ,I
F
= 1.7A, di/dt = 100A/µs
P-Channel
T
J
= 25°C,I
F
= -1.7A, di/dt = 100A/µs
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 22)
N-Channel
I
SD
4.0A,
di/dt
74A/µs,
V
DD
V
(BR)DSS
, T
J
150°C.
P-Channel I
SD
-2.8A,
di/dt
150A/µs,
V
DD
V
(BR)DSS
, T
J
150°C
N-Channel Starting T
J
= 25°C, L = 10mH, R
G
= 25, I
AS
= 4.0A. (See Fig. 12)
P-Channel Starting T
J
= 25°C, L = 35mH, R
G
= 25, I
AS
= -2.8A.
Pulse width
300µs;
duty cycle
2%.
Surface mounted on FR-4 board , t
sec.
2
2015-9-30
N-Channel
AUIRF7319Q
100
I D , Drain-to-Source Current (A)
I D, Drain-to-Source Current (A)
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
10
10
3.0V
3.0V
1
0.1
1
20µs PULSE WIDTH
T
J
= 25°C
A
10
1
0.1
1
20µs PULSE WIDTH
T
J
= 150°C
A
10
V DS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
100
100
I
D
, Drain-to-Source Current (A)
T
J
= 25°C
T
J
= 150°C
10
I
SD
, Reverse Drain Current (A)
T
J
= 150°C
10
T
J
= 25°C
1
3.0
3.5
4.0
V
DS
= 10V
20µs PULSE WIDTH
4.5
5.0
A
1
0.4
0.6
0.8
1.0
1.2
V
GS
= 0V
1.4
A
1.6
V
GS
, Gate-to-Source Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Typical Source-Drain Diode
Forward Voltage
3
2015-9-30
N-Channel
AUIRF7319Q
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 5.8A
1.5
1.0
0.5
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature
(
°
C)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
Fig. 7
Typical On-Resistance Vs. Gate Voltage
Fig 8.
Maximum Avalanche Energy
Vs. Drain Current
2015-9-30
4
N-Channel
AUIRF7319Q
1200
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 5.8A
V
DS
= 15V
16
C, Capacitance (pF)
900
C
iss
C
oss
12
600
8
300
C
rss
4
0
0
10
20
30
40
0
1
10
100
A
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
Thermal Response (Z
thJA
)
0.50
0.20
10
0.10
0.05
0.02
1
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
1
10
100
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
2015-9-30
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