PDP TRENCH IGBT
PD - 96217A
IRG6S330UPbF
Features
l
Advanced Trench IGBT Technology
l
Optimized for Sustain and Energy Recovery
circuits in PDP applications
TM
)
l
Low V
CE(on)
and Energy per Pulse (E
PULSE
for improved panel efficiency
l
High repetitive peak current capability
l
Lead Free package
Key Parameters
V
CE
min
V
CE(ON)
typ. @ I
C
= 70A
I
RP
max @ T
C
= 25°C
T
J
max
330
1.80
250
150
V
V
A
°C
C
G
E
G
C
E
n-channel
G
Gate
C
Collector
D
2
Pak
IRG6S330UPbF
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
CE(on)
and low E
PULSETM
rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
V
GE
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
RP
@ T
C
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Gate-to-Emitter Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Max.
±30
70
40
250
160
63
1.3
-40 to + 150
Units
V
A
c
W
W/°C
°C
300
Thermal Resistance
R
θJC
Junction-to-Case
d
Parameter
Typ.
–––
Max.
0.8
Units
°C/W
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09/11/09
IRG6S330UPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
CES
V
(BR)ECS
∆ΒV
CES
/∆T
J
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
Conditions
e
330
30
–––
–––
–––
–––
–––
0.29
1.25
1.43
1.80
2.38
2.10
–––
-12
2.0
10
40
150
–––
–––
94
86
36
39
32
120
55
37
33
159
95
–––
943
1086
–––
–––
–––
–––
–––
2.10
–––
–––
5.0
V V
GE
= 0V, I
CE
= 1 mA
V V
GE
= 0V, I
CE
= 1 A
V/°C Reference to 25°C, I
CE
= 1mA
V
GE
= 15V, I
CE
= 25A
V
V
GE
= 15V, I
CE
V
GE
= 15V, I
CE
V
CE(on)
Static Collector-to-Emitter Voltage
–––
–––
2.6
–––
–––
–––
–––
V
GE
= 15V, I
CE
V
GE
= 15V, I
CE
= 70A, T
J
= 150°C
V
V
CE
= V
GE
, I
CE
= 500µA
e
= 40A
e
= 70A
e
= 120A
e
V
GE(th)
∆V
GE(th)
/∆T
J
I
CES
e
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
I
GES
g
fe
Q
g
Q
gc
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
st
E
PULSE
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
Energy per Pulse
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
–––
–––
––– mV/°C
V
CE
= 330V, V
GE
= 0V
20
V
CE
= 330V, V
GE
= 0V, T
J
= 100°C
–––
µA
V
CE
= 330V, V
GE
= 0V, T
J
= 125°C
200
V
CE
= 330V, V
GE
= 0V, T
J
= 150°C
–––
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ns
µJ
ns
nA
S
nC
V
GE
= 30V
V
GE
= -30V
V
CE
= 25V, I
CE
= 25A
V
CE
= 200V, I
C
= 25A, V
GE
= 15V
I
C
= 25A, V
CC
= 196V
ns
R
G
= 10Ω, L=200µH, L
S
= 150nH
T
J
= 25°C
I
C
= 25A, V
CC
= 196V
R
G
= 10Ω, L=200µH, L
S
= 150nH
T
J
= 150°C
V
CC
= 240V, V
GE
= 15V, R
G
= 5.1Ω
L = 220nH, C= 0.40µF, V
GE
= 15V
V
CC
= 240V, R
G
= 5.1Ω, T
J
= 25°C
L = 220nH, C= 0.40µF, V
GE
= 15V
e
ESD
C
ies
C
oes
C
res
L
C
L
E
Human Body Model
Machine Model
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Collector Inductance
Internal Emitter Inductance
–––
–––
–––
–––
–––
V
CC
= 240V, R
G
= 5.1Ω, T
J
= 100°C
Class 2
(Per JEDEC standard JESD22-A114)
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
V
GE
= 0V
2275 –––
108 –––
pF V
CE
= 30V
75
4.5
7.5
–––
–––
nH
–––
ƒ = 1.0MHz,
Between lead,
6mm (0.25in.)
from package
and center of die contact
See Fig.13
Notes:
Half sine wave with duty cycle = 0.05, ton=2µsec.
R
θ
is measured at
T
J
of approximately 90°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRG6S330UPbF
500
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
ICE (A)
500
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
400
400
ICE (A)
300
300
200
200
100
100
0
0
2
4
6
8
10
0
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig 1. Typical Output Characteristics @ 25°C
500
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
Fig 2. Typical Output Characteristics @ 75°C
500
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
400
400
ICE (A)
300
200
ICE (A)
300
200
100
100
0
0
2
4
6
8
10
0
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig 3. Typical Output Characteristics @ 125°C
500
Fig 4. Typical Output Characteristics @ 150°C
25
IC = 25A
20
400
TJ = 150°C
T J = 25°C
VCE (V)
ICE (A)
300
15
TJ = 25°C
10
TJ = 150°C
200
100
5
0
0
2
4
6
8
10
12
14
16
18
VGE (V)
0
5
10
VGE (V)
15
20
Fig 5. Typical Transfer Characteristics
Fig 6. V
CE(ON)
vs. Gate Voltage
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IRG6S330UPbF
80
70
300
IC, Collector Current (A)
60
50
40
30
20
10
0
0
25
50
75
100
125
150
Repetitive Peak Current (A)
200
100
ton= 2µs
Duty cycle = 0.1
Half Sine Wave
0
25
50
75
100
125
150
Case Temperature (°C)
T C, Case Temperature (°C)
Fig 7. Maximum Collector Current vs. Case Temperature
1100
1050
1000
V CC = 240V
L = 220nH
C = variable
100°C
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
1100
1000
Energy per Pulse (µJ)
L = 220nH
C = 0.4µF
100°C
Energy per Pulse (µJ)
950
900
850
800
750
700
650
600
150 160 170 180 190 200 210 220 230
IC, Peak Collector Current (A)
25°C
900
800
700
600
500
195 200 205 210 215 220 225 230 235 240
VCC, Collector-to-Supply Voltage (V)
25°C
Fig 9. Typical E
PULSE
vs. Collector Current
1400
V CC = 240V
1200
Energy per Pulse (µJ)
Fig 10. Typical E
PULSE
vs. Collector-to-Supply Voltage
1000
L = 220nH
t = 1µs half sine
C= 0.4µF
1000
C= 0.3µF
800
600
400
200
25
50
75
100
125
150
TJ, Temperature (ºC)
C= 0.2µF
100
IC (A)
10 µs
100 µs
10
1ms
1
1
10
V CE (V)
100
1000
Fig 11. E
PULSE
vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
4
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IRG6S330UPbF
100000
VGE, Gate-to-Emitter Voltage (V)
VGS = 0V,
f = 1 MHZ
C ies = C ge + C gd, C ce SHORTED
C res = C gc
C oes = C ce + Cgc
16
14
12
10
8
6
4
2
0
IC = 25A
V CES = 240V
V CES = 150V
V CES = 60V
10000
Capacitance (pF)
1000
Cies
100
Coes
Cres
10
0
50
100
150
200
0
20
40
60
80
100
VCE, Collector-toEmitter-Voltage(V)
Q G, Total Gate Charge (nC)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
1
D = 0.50
Thermal Response ( ZthJC )
0.20
0.1
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
C
τ
1
τ
2
τ
3
τ
3
τ
Ri (°C/W)
τι
(sec)
0.01
Ci=
τi/Ri
Ci=
τi/Ri
0.084697 0.000038
0.374206 0.001255
0.341867 0.013676
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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