Continuous Source Current (MOSFET Diode Conduction)
a
Average Forward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
a
Maximum Power Dissipation (Schottky)
a
Operating Junction and Storage Temperature Range
Notes:
a. Surface mounted on 1" x 1" FR4 board.
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
J
, T
stg
P
D
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
KA
V
GS
I
D
I
DM
I
S
I
F
I
FM
1.15
0.73
1.0
0.64
- 55 to 150
- 1.05
0.5
7
0.83
0.53
0.76
0.48
°C
W
± 12
± 1.8
± 1.5
±7
- 0.75
5s
- 20
20
± 12
± 1.6
± 1.2
A
V
Steady State
Unit
Document Number: 70979
S09-2276-Rev. B, 02-Nov-09
www.vishay.com
1
Si3853DV
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t
≤
5s
Junction-to-Ambient
a
Steady State
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
MOSFET
R
thJF
R
thJA
Symbol
Typical
93
103
130
140
75
80
Maximum
110
125
150
165
90
95
°C/W
Unit
Junction-to-Foot
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Body Diode Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 1.05 A, dI/dt = 100 A/µs
V
DD
= - 10 V, R
L
= 10
Ω
I
D
≅
- 1 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 1.8 A
2.7
0.4
0.6
11
34
19
24
20
17
50
30
36
40
ns
4.0
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= - 16 V, V
GS
= 0 V
V
DS
= - 16 V, V
GS
= 0 V, T
J
= 75 °C
V
DS
≥
- 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 1.8 A
V
GS
= - 2.5 V, I
D
= - 1.0 A
V
DS
= - 5 V, I
D
= - 1.8 A
I
S
= - 1.05 V, V
GS
= 0 V
-5
0.160
0.280
3.6
- 0.83
- 1.10
0.200
0.340
- 0.5
± 100
-1
- 10
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V
F
Test Conditions
I
F
= 0.5 A
I
F
= 0.5 A, T
J
= 125 °C
V
R
= 20 V
Maximum Reverse Leakage Current
I
rm
C
T
V
R
= 20 V, T
J
= 75 °C
V
R
= 20 V, T
J
= 125 °C
Junction Capacitance
V
R
= 10 V
Min.
Typ.
0.42
0.33
0.002
0.06
1.5
31
Max.
0.48
0.4
0.100
1
10
pF
mA
Unit
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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