BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Rev. 06 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors.
Table 1.
Product overview
Package
NXP
BC817
BC817W
BC337
[1]
[1]
Type number
PNP complement
JEITA
-
SC-70
SC-43A
BC807
BC807W
BC327
SOT23
SOT323
SOT54 (TO-92)
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
High current
Low voltage
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
DC current gain
BC817; BC817W; BC337
BC817-16; BC817-16W; BC337-16
BC817-25; BC817-25W; BC337-25
BC817-40; BC817-40W; BC337-40
[1]
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
Conditions
open base;
I
C
= 10 mA
Min
-
-
-
Typ
-
-
-
-
-
-
-
-
Max
45
500
1
-
600
250
400
600
Unit
V
mA
A
I
C
= 100 mA;
V
CE
= 1 V
[1]
-
100
100
160
250
NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
2. Pinning information
Table 3.
Pin
SOT23
1
2
3
base
emitter
collector
1
2
2
sym021
Pinning
Description
Simplified outline
Symbol
3
1
3
SOT323
1
2
3
base
emitter
collector
3
1
2
sym021
3
1
2
sot323_so
SOT54
1
2
3
emitter
base
collector
1
2
3
001aab347
3
2
1
sym026
SOT54A
1
2
3
emitter
base
collector
1
2
3
001aab348
3
2
1
sym026
SOT54 variant
1
2
3
emitter
base
collector
1
2
3
001aab447
3
2
1
sym026
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
2 of 19
NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
3. Ordering information
Table 4.
Ordering information
Package
Name
BC817
BC817W
BC337
[2]
[1]
[2]
Type number
[1]
Description
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
Version
SOT23
SOT323
-
SC-70
SC-43A
plastic single-ended leaded (through hole) package; SOT54
3 leads
Valid for all available selection groups.
Also available in SOT54A and SOT54 variant packages (see
Section 2
and
Section 9).
4. Marking
Table 5.
BC817
BC817-16
BC817-25
BC817-40
BC817W
BC817-16W
BC817-25W
BC817-40W
BC337
BC337-16
BC337-25
BC337-40
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
6D*
6A*
6B*
6C*
6D*
6A*
6B*
6C*
C337
C33716
C33725
C33740
Type number
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
3 of 19
NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
BC817
BC817W
BC337
T
stg
T
j
T
amb
[1]
[2]
Conditions
open emitter
open base;
I
C
= 10 mA
open collector
Min
-
-
-
-
-
-
Max
50
45
5
500
1
200
250
200
625
+150
150
+150
Unit
V
V
V
mA
A
mA
mW
mW
mW
°C
°C
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
[1][2]
[1][2]
[1][2]
-
-
-
−65
-
−65
storage temperature
junction temperature
ambient temperature
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Valid for all available selection groups.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
BC817
BC817W
BC337
[1]
[2]
Conditions
Min
Typ
Max
Unit
T
amb
≤
25
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
[1][2]
[1][2]
[1][2]
-
-
-
-
-
-
500
625
200
K/W
K/W
K/W
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Valid for all available selection groups.
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
4 of 19
NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off current
Conditions
I
E
= 0 A; V
CB
= 20 V
I
E
= 0 A; V
CB
= 20 V;
T
j
= 150
°C
I
EBO
h
FE
emitter-base cut-off current
DC current gain
BC817; BC817W; BC337
BC817-16; BC817-16W;
BC337-16
BC817-25; BC817-25W;
BC337-25
BC817-40; BC817-40W;
BC337-40
h
FE
V
CEsat
V
BE
C
c
f
T
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
V
BE
decreases by approximately 2 mV/K with increasing temperature.
Min
-
-
-
[1]
Typ
-
-
-
-
-
-
-
-
-
-
3
-
Max
100
5
100
600
250
400
600
-
700
1.2
-
-
Unit
nA
μA
nA
I
C
= 0 A; V
EB
= 5 V
I
C
= 100 mA; V
CE
= 1 V
100
100
160
250
I
C
= 500 mA; V
CE
= 1 V
I
C
= 500 mA; I
B
= 50 mA
I
C
= 500 mA; V
CE
= 1 V
I
E
= i
e
= 0 A; V
CB
= 10 V;
f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V;
f = 100 MHz
[1]
[1]
40
-
-
-
100
mV
V
pF
MHz
[2]
[1]
[2]
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
5 of 19
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